H11B1, H11B2, H11B3
www.vishay.com Vishay Semiconductors
Rev. 1.7, 19-Oct-12 1Document Number: 83609
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Photodarlington Output, High Gain,
with Base Connection
DESCRIPTION
The H11B1, H11B2, H11B3 are industry standard
optocouplers, consisting of a gallium arsenide infrared LED
and a silicon photodarlington.
FEATURES
Isolation test voltage: 5300 VRMS
Coupling capacitance, 0.5 pF
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
AGENCY APPROVALS
UL1577, file no. E52744 system code J
DIN EN 60747-5-5 (VDE 0884-5) available with option 1
FIMKO EN60065, EN60950-1
CQC: GB8898
Notes
Additional options may be possible, please contact sales office.
(1) Also available in tubes, no “T” in the end.
1
2
3
6
5
4
B
C
E
A
C
NC
i179005
ORDERING INFORMATION
H11B#-X00#
PART NUMBER PACKAGE OPTION
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, FIMKO, CQC > 500 > 200 > 100
DIP-6 H11B1 H11B2 H11B3
SMD-6, option 7 H11B1-X007T (1) --
SMD-6, option 9 H11B1-X009 H11B2-X009T (1) -
UL, FIMKO, CQC, VDE > 500 > 200 > 100
SMD-6, option 7 H11B1-X017 - -
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR3V
Forward continuous current IF60 mA
Power dissipation Pdiss 100 mW
Derate linearly from 25 °C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BVCEO 25 V
Emitter collector breakdown voltage BVECO 7V
Collector base breakdown voltage BVCBO 30 V
Collector current (continuous) IC100 mA
Power dissipation Pdiss 150 mW
Derate linearly from 25 °C 2mW/°C
7.62 mm
DIP
> 0.1 mm
Option 9
> 0.7 mm
Option 7
H11B1, H11B2, H11B3
www.vishay.com Vishay Semiconductors
Rev. 1.7, 19-Oct-12 2Document Number: 83609
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
between emitter and detector VISO 5300 VRMS
Creepage distance 7mm
Clearance distance 7mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1 CTI 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Total package dissipation (LED plus detector) Ptot 260 mW
Derate linearly from 25 °C 3.5 mW/°C
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Lead soldering time at 260 °C 10 s
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA H11B1 VF1.1 1.5 V
H11B2 VF1.1 1.5 V
IF = 10 mA H11B3 VF1.1 1.5 V
Reverse current VR = 3 V IR10 μA
Junction capacitance VF = 0 V, f = 1 MHz Cj50 pF
OUTPUT
Collector emitter breakdown voltage IC = 1 mA, IF = 0 mA BVCEO 30 V
Emitter collector breakdown voltage IE = 100μA, IF = 0 mA BVECO 7V
Collector base breakdown voltage IC = 100 μA , IF = 0 mA BVCBO 30 V
Collector emitter leakage current VCE = 10 V, IF = 0 mA ICEO 100 nA
COUPLER
Saturation voltage collector-emitter IF = 1 mA, IC = 1 mA VCEsat 1V
Capacitance (input to output) CIO 0.5 pF
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
DC current transfer ratio VCE = 5 V, IF = 1 mA
H11B1 CTRDC 500 %
H11B2 CTRDC 200 %
H11B3 CTRDC 100 %
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Switching times IF = 5 mA, VCE = 10 V, RL = 100 Ωton s
toff 30 μs
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
H11B1, H11B2, H11B3
www.vishay.com Vishay Semiconductors
Rev. 1.7, 19-Oct-12 3Document Number: 83609
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 2 - Normalized Non-Saturated and Saturated CTRCE vs.
LED Current
Fig. 3 - Normalized Non-Saturated and Saturated ICE vs.
LED Current
Fig. 4 - Normalized Non-Saturated and Saturated Collector Emitter
Current vs. LED Current
Fig. 5 - Non-Saturated and Saturated hFE vs. Base Current
Fig. 6 - Low to High Propagation Delay vs.
Collector Load Resistance and LED Current
ih11b1_01
I
F
- Forward Current (mA)
1001010.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
F
- Forward Voltage (V)
Ta = - 55 °C
Ta = 25 °C
Ta = 100 °C
ih11b1_02
0.1 1 10 100
I
F
- LED Current (mA)
NCTR
ce
- Normalized CTR
ce
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE = 1 V
VCE = 5 V
Normalized to:
VCE = 5 V
IF = 1 mA
ih11b1_03
100
10.1
0.01
0.1
1
10
100
VCE = 1 V
VCE = 5 V
I
F
- LED Current (mA)
NI
ce
- Normalized I
ce
IF = 2 mA
VCE = 5 V
Normalized to:
10
ih11b1_04
100
10.1
0.001
0.01
0.1
1
10
VCE = 1 V
VCE = 5 V
I
F
- LED Current (mA)
NI
ce
- Normalized
IF = 10 mA
VCE = 5 V
Normalized to:
10
ih11b1_05
0.01 0.1 1 10 100
0
2000
4000
6000
8000
10 000
VCE = 5 V
VCE = 1 V
I
b
- Base Current (µA)
h
FE
- Forward Transfer Gain
ih11b1_06
0101520
0
20
40
60
80
VCC = 5 V
Vth = 1.5 V
470 Ω
IF - LED Current (mA)
tpLH - Low/High Propagation
Delay (µs)
100 Ω
1.0 kΩ
5
220 Ω
H11B1, H11B2, H11B3
www.vishay.com Vishay Semiconductors
Rev. 1.7, 19-Oct-12 4Document Number: 83609
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - High to Low Propagation Delay vs.
Collector Load Resistance and LED Current
Fig. 8 - Switching Waveform
Fig. 9 - Switching Schematic
ih11b1_07
0101520
0
5
10
15
20
100 Ω
1 kΩ
IF - LED Current (mA)
tpHL - High/Low Propagation
delay (µs)
VCC = 5 V
Vth = 1.5 V
5
ih11b1_08
I
F
t
R
V
O
t
D
t
S
t
F
t
PHL
t
PLH
V = 1.5 V
TH
ih11b1_09
V
O
R
L
V
CC
= 10 V
I
F
= 5 mA
f = 10 kHz,
DF = 50 %
H11B1, H11B2, H11B3
www.vishay.com Vishay Semiconductors
Rev. 1.7, 19-Oct-12 5Document Number: 83609
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING
Notes
Only options 1, 7, and 9 are reflected in the package marking.
The VDE logo is only marked on option 1 parts.
Tape and reel suffix (T) is not part of the package marking.
i178004
0.25 typ.
2.95 ± 0.5
3.555 ± 0.255
0.8 min.
7.62 typ.
0.85 ± 0.05
2.54 typ.
1 min.
0.5 ± 0.05
6.4 ± 0.1
8.6 ± 0.1
Pin one ID
6
5
4
12
3
18°
3° to 9°
7.62 to 8.81
4° typ.
ISO method A
1.2 ± 0.1
22665
8 min.
0.51
1.02
7.62 ref.
9.53
10.03
0.30 typ.
0.102
0.249
15° max.
Option 9
8 min.
7.62 typ.
4.6
4.1
8.4 min.
10.3 max.
0.7
Option 7
2.54 R 0.25
1.78
0.76
1.52
8 min.
11.05
2.54 R 0.25
1.78
0.76
1.52
8 min.
11.05
X017
V YWW H 68
H11B1
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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