Kwa SGS-THOMSON BD241A/B/C Jy MICROELECTRONICS BD242A/B/C COMPLEMENTARY SILICON POWER TRANSISTORS a SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD241A, BD241B and BD241C are silicon epitaxial-base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD242A, BD242B and BD242C respectively. INTERNAL SCHEMATIC DIAGRAM Co (2) Co (2) (1) (1) B B EO(3) Eo (3) SCOBSEO SC08810 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN | BD241A BD241B BD241C PNP | BD242A BD242B BD242C VcER Collector-Base Voltage (Ree = 100 Q) 70 90 115 V Vceo |Collector-Emitter Voltage (lp = 0) 60 80 100 Vv Veso |Emitter-Base Voltage (Ic = 0) 5 Vv lo Collector Current 3 A Icom Collector Peak Current 5 A lp Base Current 1 A Prot Total Dissipation at Te < 25 C 40 Ww Ptot |Total Dissipation at Tam < 25 C 2 w Tstg Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C For PNP types voltage and current values are negative. October 1995 1/4BD241A/B/C/BD242A/B/C THERMAL DATA Rthj-case |Thermal Resistance Junction-case Max 3.13 C/W Rthj-amb | Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (Tease = 25 C unlessotherwise specified) Symbol Parameter Test Conditions Min. | Typ. Max. Unit IcES Collector Cut-off Voce = rated Vceo 0.2 mA Current (Vee = 0) IcEO Collector Cut-off for BD241A/BD242A Vce =30V 0.3 mA Current (lp = 0) for BD241B/BD242B Vce = 60 V 0.3 mA for BD241C/BD242C Vce =60V 0.3 mA lEBO Emitter Cut-off Current |Ves = 5 V 1 mA (Ic = 0) VocEo(sus)* | Collector-Emitter lo = 30 MA Sustaining Voltage for BD241A/BD242A 60 Vv for BD241B/BD242B 80 Vv for BD241C/BD242C 100 Vv Vce(saty* | Collector-Emitter Ic=3A Ip=O0.6A 1.2 Vv Saturation Voltage VBE* Base-Emitter Voltage Ic=3A Voce =4V 1.8 Vv hre* DC Current Gain Ic=1A Voce =4V 25 lc=3A VceE=4V 10 hfe Small Signal Current Ic=0.5A Vce=10V f=1MHz 3 Gain Ic=0.5A Voce =10V f=1KHz 20 Pulsed: Pulse duration = 300 pis, duty cycle < 2% For PNP types voltage and current values are negative. 2/4 MICROELECTRONICSBD241A/B/C/BD242A/B/C TO-220 MECHANICAL DATA D1 3/4 AS] Sicpon scmoncsBD241A/B/C/BD242A/B/C Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical compments in life supportdevices or systems without express written approval of SGS-THOMSON Microelectaics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectrorics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 AS] Sicpon scmoncs