H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
September 2009
H11AA1M, H11AA2M, H11AA3M, H11AA4M
AC Input/Phototransistor Optocouplers
Features
■
Bi-polar emitter input
■
Built-in reverse polarity input protection
■
Underwriters Laboratory (UL) recognized File
#E90700, Volume 2
■
VDE approved File #102497 (ordering option ‘V’)
Applications
■
AC line monitor
■
Unknown polarity DC sensor
■
Telephone line interface
Description
The H11AAXM series consists of two gallium-arsenide
infrared emitting diodes connected in inverse parallel
driving a single silicon phototransistor output.
Schematic Package Outlines
1
2
6
5 COLL
4 EMITTER
BASE
3
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 2
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Absolute Maximum Ratings
(T
A
=25°C Unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Device Value Units
TOTAL DEVICE
T
STG
Storage Temperature All -40 to +150 °C
T
OPR
Operating Temperature All -40 to +100 °C
T
SOL
Lead Solder Temperature All 260 for 10 sec °C
P
D
Total Device Power Dissipation
Derate Linearly From 25°C
All 250 mW
2.94 mW/°C
EMITTER
I
F
Continuous Forward Current All 60 mA
I
F
(pk) Forward Current – Peak (1µs pulse, 300 pps) All ±1.0 A
P
D
LED Power Dissipation
Derate Linearly From 25°C
All 120 mW
1.41 mW/°C
DETECTOR
I
C
Continuous Collector Current All 50 mA
P
D
Detector Power Dissipation
Derate linearity from 25°C
All 150 mW
1.76 mW/°C
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 3
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
*Typical values at T
A
= 25°C
Transfer Characteristics
Isolation Characteristics
*Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= ±10mA All 1.17 1.5 V
C
J
Capacitance V
F
= 0 V, f = 1.0MHz All 80 pF
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter
I
C
= 1.0mA, I
F
= 0 All 30 100 V
BV
CBO
Collector to Base I
C
= 100µA, I
F
= 0 All 70 120 V
BV
EBO
Emitter to Base I
E
= 100µA, I
F
= 0 All 5 10 V
BV
ECO
Emitter to Collector I
E
= 100µA, I
F
= 0 All 7 10 V
I
CEO
Leakage Current
Collector to Emitter
V
CE
= 10 V, I
F
= 0 H11AA1M
H11AA3M
H11AA4M
150nA
H11AA2M 1 200
C
CE
Capacitance Collector
to Emitter
V
CE
= 0, f = 1MHz All 10 pF
C
CB
Collector to Base V
CB
= 0, f = 1MHz All 80 pF
C
EB
Emitter to Base V
EB
= 0, f = 1MHz All 15 pF
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
CTR
CE
Current Transfer Ratio,
Collector to Emitter
I
F
= ±10mA, V
CE
= 10V H11AA4M 100 %
H11AA3M 50
H11AA1M 20
H11AA2M 10
Current Transfer Ratio,
Symmetry
I
F
= ±10mA, V
CE
= 10V
(Figure 11)
All .33 3.0
V
CE(SAT)
Saturation Voltage,
Collector to Emitter
I
F
= ±10mA, I
CE
= 0.5mA All .40 V
Symbol Characteristic Test Conditions Min. Typ.* Max. Units
C
I-O
Package Capacitance
Input/Output
V
I-O
= 0, f = 1MHz 0.7 pF
V
ISO
Isolation Voltage f = 60Hz, t = 1 sec. 7500 Vac(pk)
R
ISO
Isolation Resistance V
I-O
= 500 VDC 10
11
Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 4
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
V
PR
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594 V
peak
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275 V
peak
V
IORM
Max. Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over Voltage 6000 V
peak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, V
IO
= 500V 10
9
Ω
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 5
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Typical Performance Characteristics
Fig. 2 Normalized CTR vs. Forward Current
IF – FORWARD CURRENT (mA)
NORMALIZED CTR
Fig. 3 Normalized CTR vs. Ambient Temperature
NORMALIZED CTR
TA – AMBIENT TEMPERATURE (°C)
Fig. 5 CTR vs. RBE (Saturated)
RBE- BASE RESISTANCE (k Ω)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
Fig. 4 CTR vs. RBE (Unsaturated)
RBE – BASE RESISTANCE (kΩ)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
IC - COLLECTOR CURRENT (mA)
VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 1 Input Voltage vs. Input Current
VF – INPUT VOLTAGE (V)
I
F
– INPUT CURRENT (mA)
0.01 0.1 1 10
0.001
0.01
0.1
1
10
100
TA
= 25°C
IF = 2.5mA
IF = 20mA
IF = 10mA
IF = 5mA
-2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0
-100
-80
-60
-40
-20
0
20
40
60
80
100
TA = 25°C
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 5V
TA = 25°C
IF = 10mA
IF = 5mA
IF = 20mA
10 100 1000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VCE = 0.3V
TA = 25°C
IF = 10mA
IF = 5mA
IF = 20mA
-60 -40 -20 0 20 40 60 80 100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IF = 10mA
VCE = 5V
Normalized to IF = 10mA, TA = 25°C
IF = 5mA
IF = 20mA
051015 20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TA = 25°C
VCE = 5V
Normalized to IF = 10mA
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 6
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Typical Performance Characteristics
(Continued)
NORMALIZED t
on
– (t
on(R
BE
)
/ t
on(open)
)
Fig. 8 Normalized ton vs. RBE
RBE- BASE RESISTANCE (k Ω)
Fig. 7 Switching Speed vs. Load Resistor
R – LOAD RESISTOR (kΩ)
SWITCHING SPEED (µs)
NORMALIZED t
off
– (t
off(R
BE
)
/ t
off(open)
)
Fig. 9 Normalized toff vs. RBE
RBE – BASE RESISTANCE (kΩ)
Fig. 10 Dark Current vs. Ambient Temperature
TA – AMBIENT TEMPERATURE
(°C)
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
VCE – COLLECTOR TO EMITTER VOLTAGE (V)
.01 .05 .1 .5 5110
NORMALIZED OUTPUT CURRENT
.01
.005
.05
.1
.5
1
5
10
Fig. 11 Output Symmetry Characteristics
IF = I - 10mA I
IF = I 10mA I
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
THE MAXIMUM PEAK
OUTPUT CURRENT
WILL BE NO MORE
THAN THREE TIMES
THE MINIMUM PEAK
OUTPUT CURRENT AT
IF = ±10 mA
10 100 1000 10000 100000
0
1
2
3
4
5
6
7
VCC = 10V
IC = 2mA
RL = 100Ω
TA = 25°C
10 100 1000 10000 100000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VCC = 10V
IC = 2mA
RL = 100Ω
TA = 25°C
0.1 1 10 100
0.1
1
10
100
1000
IF = 10mA
VCC = 10V
TA = 25°C
Toff
Ton
Tr
Tf
020406080100
0.1
1
10
100
1000
10000
V
CE
= 10V
V
CE
= 30V
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 7
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Package Dimensions
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
8.13–8.89
6.10–6.60
Pin 1
64
13
0.25–0.36
5.08 (Max.)
3.28–3.53
0.38 (Min.) 2.54–3.81
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
7.62 (Typ.)
15° (Typ.)
0.20–0.30
0.20–0.30
10.16–10.80
Through Hole 0.4" Lead Spacing
Surface Mount
Rcommended Pad Layout
(1.78)
(2.54)
(1.52)
(7.49)
(10.54)
(0.76)
8.13–8.89
Note:
All dimensions in mm.
6.10–6.60
8.43–9.90
Pin 1
64
13
0.25–0.36
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.76–1.14
0.38 (Min.)
3.28–3.53
5.08
(Max.) 0.20–0.30
0.16–0.88
(8.13)
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 8
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Ordering Information
Marking Information
Option
Order Entry Identifier
(Example) Description
No option H11AA1M Standard Through Hole Device
S H11AA1SM Surface Mount Lead Bend
SR2 H11AA1SR2M Surface Mount; Tape and Reel
T H11AA1TM 0.4" Lead Spacing
V H11AA1VM VDE 0884
TV H11AA1TVM VDE 0884, 0.4" Lead Spacing
SV H11AA1SVM VDE 0884, Surface Mount
SR2V H11AA1SR2VM VDE 0884, Surface Mount, Tape and Reel
H11AA1
V X YY Q
1
2
6
43 5
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that
are marked with date code ‘325’ or earlier are marked in portrait format.
Definitions
1Fairchild logo
2Device number
3 VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘3’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 9
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
Carrier Tape Specification
Reflow Profile
4.0 ± 0.1
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
24.0 ± 0.3
12.0 ± 0.1
0.30 ± 0.05
21.0 ± 0.1
4.5 ± 0.20
0.1 MAX 10.1 ± 0.20
9.1 ± 0.20
Ø1.5 ± 0.1/-0
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
°C
Time (s)
0 60 180120 270
260°C
>245°C = 42 Sec
Time above
183°C = 90 Sec
360
1.822°C/Sec Ramp up rate
33 Sec
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 10
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries,andis not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter®*
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
ThePower Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technicalandproduct information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Preliminary Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
First Production
H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers