February 2002
2002 Fairchild Semiconductor Corporation FDS4480 Rev D (W)
FDS4480
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
Applications
• DC/DC converter
Features
• 10.8 A, 40 V. RDS(ON) = 12 mΩ @ VGS = 10 V
• Low gate charge (29 nC)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
DDDD
SSSG
Pin 1
SO-8
4
3
2
1
5
6
7
8
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 40 V
VGSS Gate-Source Voltage +30/–20 V
ID Drain Current – Continuous (Note 1a) 10.8 A
– Pulsed 45
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b) 1.4
PD
(Note 1c) 1.2
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS4480 FDS4480 13’’ 12mm 2500 units
FDS4480
FDS4480 Rev D (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter Test Conditions Min Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD=40V, ID=10.8A
240 mJ
IAS Drain-Source Avalanche Current 10.8 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 40 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C
42
mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA
IGSSF Gate–Body Leakage, Forward VGS = 30 V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 3.9 5 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = 250 µA, Referenced to 25°C
–8
mV/°C
RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 10.8 A
VGS = 10 V,ID = 10.8 A, TJ=125°C
8
13 12
21 mΩ
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 22 A
gFS Forward Transconductance VDS = 10 V, ID = 10.8 A 36 S
Dynamic Characteristics
Ciss Input Capacitance 1686 pF
Coss Output Capacitance 384 pF
Crss Reverse Transfer Capacitance
VDS = 20 V, V GS = 0 V,
f = 1.0 MHz 185 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 12 22 ns
tr Turn–On Rise Time 9 18 ns
td(off) Turn–Off Delay Time 30 48 ns
tf Turn–Off Fall Time
VDD = 20 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
15 27 ns
Qg Total Gate Charge 29 41 nC
Qgs Gate–Source Charge 17 nC
Qgd Gate–Drain Charge
VDS = 20 V, ID = 10.8 A,
VGS = 10 V
4 nC
FDS4480
FDS4480 Rev D (W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter Test Conditions Min Typ
Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V
trr Diode Reverse Recovery Time IF = 10.8 A, diF/dt = 100 A/µs 27 nS
Qrr Diode Reverse Recovery Charge 58 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4480
FDS4480 Rev D (W)
Typical Characteristics
0
10
20
30
40
50
60
70
80
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 10V 5.5V
5.0V
4.5V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
020 40 60 80
ID, DRAIN CURRENT (A)
R
DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 5.0V
10V
6.0V
7.0V
5.5V
8.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 025 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
R
DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 10.8A
VGS = 10V
0.007
0.01
0.013
0.016
0.019
0.022
0.025
45678910
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = 5.4A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
20
40
60
80
23456
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TA = -55oC25oC
125oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
100
00.2 0.4 0.6 0.8 11.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4480
FDS4480 Rev D (W)
Typical Characteristics
0
2
4
6
8
10
0 5 10 15 20 25 30 35
Qg, GATE CHARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
ID = 10.8A VDS = 10V 20V
30V
0
400
800
1200
1600
2000
2400
0 10 20 30 40
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.01 0.1 110 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC 10s1s100ms
100
µ
s
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 110 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 125oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4480
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
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