oo O1 DE Jse7soa1 Do17b84 & 3875081 GE SOLID STATE ee ee 3 Tr PRs High-Voltage Power Transistors File Number 523 2N6249, 2N6250, 2N6251 . 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors For Switching Applications in Industrial and Commercial Equipment Features: 8 High voltage ratings: Veeo = 450 V (2N6251) 375 V (2N6250) | | 300 V (2N6249) 8 High dissipation rating: P,=175W = Low saturation voltages Maximum safe-area-of-operation curves RCA-2N6249, 2N6250 and 2N6251 are multiple epitaxial TERMINAL DESIGNATIONS silicon n-p-n power transistors. Multiple-epitaxial construction maximizes the volt-ampere characterlstic of the device and provides fast switching speeds. EN These devices use the popular JEDEC TO-204AA package; they differ mainly in voltage ratings, leakage-current limits, and Vce(sat) ratings. The exceptional second-breakdown capabilities and high c (FLANGE) voltage-breakdown ratings make these transistors especially 92CS-27516 suitable for offline inverters, switching regulators motor controls, and deflection circuit applications. JEDEC TO-213AA The high gain and high Es energy-handling capability of the 2N6249 make it an excellent choice for motor-control applications in which large winding inductances are encountered and high surge currents are required to start the motor. The high breakdown voltages, low saturation voltages, and fast-switching capability of the 2N6250 and 2N6251 make them especially suitable for inverter circuits operating directly off the rectified 115-V power {ine or a bridge configuration operating from the rectified 220-V fine. MAXIMUM RATINGS, Absolute-Maximum Values: 2N6249 2N6250 2N6251 "VCBO cece cence cer ec eee n reeset eee erence set nenereenetecasatens ee tares 300 375 450 v Voeo(SUS)...c cece eeee 200 275 350 Vv * Voex(sus) (Vee =OV)... 225 300 376 v Veern(sus) (Ree) = 502 225 300 375 Vv *VEBO pce sceecetertees 6 6 6 Vv do eee ee eee ee een e eee 10 10 10 A VOM ses serereeecerees eee 30 30 30 A ccc cence renee een eee eee Ete Ee ee RENE Oooo tenes enue neeaeee 10 10 10 A Pp, At Tc up to 25C and Vee Up to BO V oo. c eect eect e eter rent een naee 175 175 175 Ww At Tc up to 25C and Vce above 30 V.. . _____ Derate Linearly at 1 _____ C/W "Tay Taig cece cet ce crete tees sence nwo tate sn enon seeueeeeeese seen teeee ___-____ -65 to +200 C *T, At distances = 1/32 In. (0.8 mm) from case for 10S Max. ........056+ 230 C * 2N-Series types in accordance with JEDEC registration data format (JS-6, RDF-1). 1913875081 GE SOLID sTaTe O1 DE Basrsoas OUL?7L40 2 i DT*33)5 High-Voltage Power Transistors 2N6249, 2N6250, 2N6251 ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25 C Unless Otherwise Specified TEST CONDITIONS LIMITS u pc} oc N CHARAC- VOLT) CUR- 1 TERISTIC | AGE] RENT T (v) | tA) 2N6249 2NG6250 2N6251 Veel tc | te |min|tve|Max.| min.|Tye.|MAx.| MIN. |TYP] MAX. 160 oj -| -| 5 -|]-j- -|-{- IcEO 225 Oo; j -|] - -]- 5 -|- |] - 300 o;j -~| -| - -|-|- -|-| 5 225 -|-| 5 -|-|- -~|-| - *lIcev 300 -|-j) - -}-{ 5] -|-| [ma Vee=-15 [375 -|-|- -{|-|f - -|-| 5 *licev 225 - - 10 - - - - - _ Vee=15 |300 -|]-|] - |- | 10 -j}-] - To=128C }375 -~|-|- -|-|- _~ |_| 40 * ERO -|-/| 1 -|-{ 1 |-j} 1 {ma Vpe=8 *!Vceo(sus) | [02 2oab] | - | 275b] - | - | 3506] -| - VcerR Gus) ga5b]) | 3oob) - | 375b) | - Rge= 502 a2 5 *|Vego -|{- 6j)-i- 6}-| - |v Ig=1mA 8 3 |108 10 | -] 50 -|-|- ~|-|- 4 [108 -j|-|]- gs | | 50 -{-|- hFE 3 |108 -|-|- | -|-|[- 6 | | 50 ya} 1] | 42.25 -{-|]- -|-|- 1a }1.26] | -| - - | - j2.25 -|-|- * | Vpglsat) roa |ue7| | -| - | -|-|- | - | -J225 | soa} af | -] 15 ~|-| - -|-j} - 1oa}i25, ~| -| - ~| -| 15 -|-| - * . Voelsat) 1oalae7} | -| - -|-|[- | | 15 [Y * | Ihgol 6 Mie 10] 4 25| 8] - | 25] a] - | 25] 8] - * 'S/b 30 ss| | | s8]/-|;- | 58}|-] - |A ty = Isnonrep. * | Esip Vae= 4 Rp =509, toc a5} --| - | 26} -| | 281 -| - |m L=50pH *lt 10 1/-fosl] 2 |-|- ~|[-[ - Vec= 200V, 10 J125/ ] -] - - joa] 2 -j;-|- IB1=lp2 10 Jie7| - | |] - -j|-|- - jos| 2 lt 10 1) [18] 35 -|-{- -|-|- Voc =200V, 10 l1.257 | -] - 118/35 -~j-| - [ps ipq=lp2 1 j1ue7}] -] - -{|-j- - 11.8} 3.5 ty 10 7|- fo5/ 1 -{|-{ -~7-T- Voc = 200V, 10 j1.25/ ~| -] - - jos] 1 -|-|- 1p1-!p2 10 jie7/ ] -] - -|-|- - |o5] 1 RaJc 10 | 5 -|-] 1 -|f-] 1 -|- 1 [cAw * 2i\-Series types in accordance with JEDEC registration data format (JS-6 RDF-1). & Pulsed; pulse duration <300 us, duty factor = 2%. 6 CAUTION: The sustaining voltages Vegolsus) and Vee_er(sus) MUST NOT be Measured on a curve tracer.TY 01 De ff 3a750a1 oowia4y Jp 1-33-15 High-Voltage Power Transistors 2N6249, 2N6250, 2N6251 3875081 GE SOLID STATE ry Ig MAX. (CONTINUGUS? a - Laks iz #FOR SINGLE =! NONREPETITIVE | 1 PULSE wt COLLECTOR CURRENT [Ic]: ty, +t . Yoeg MAX +200 Vv (2N6249 Veo MAX #275 V (2N6250 Veo MAX = 350 V (2NG251 . il 1 8 10 2 6 8100 2 #1000 COLLECTOR-TO-EMITTER VOLTAGE (Vogl ~ Vv - 9205-19468 Fig. 1 - Maximum operating areas for all types at To = 26C. Ig MAX {CONTINUOUS} aa | : : y CASE TEMPERATURE (Tc}=25*C | ~ df yah | : . hh oa > --CASE TEMPERATURE {Tc} *100 cote egos Seep ee may te pe at yt L ! = | yi A c! go BE 2 ty o 6 Pe eo uw a 20. 3S au Veeo MAX #200 V (2N6249 Vceo MAX 275 V (2N6250) v MAX 350 V (2NG251 } ' 4 10 8 100 4 8 8900 COLLECTOR-TO-EMITTER VOLTAGE (Vpglv 92c$-19469 Fig. 2 - Maximum operating areas for all types at To = 100C. 193re 3875081 G E soLip staTeE UL DE Bjzs7soa1 OOL?hic & High-Voltage Power !ransistors 2N6249, 2N6250, 2N6251 COLLECTOR-TO-EMITTER VOLTAGE (Vo_) 3 NORMALIZED 0C FORWARDCURRENT TRANSFER RATIO (hee) ol 10 ' COLLECTOR CURRENT (Ic) A 9208-19478 Fig. 3 - Typical normalized dc beta characteristics for all types. Te/Tg =l0 6 (2N6251) 5 lo 15, 20 COLLECTOR CURRENT (I}A 92cS-1948IRI Fig.5- Typical collector-to-emitter saturation voltage charactoristics for all types. I 8 sg & G Z & 3 5 5 Bb 5 3 5 3 6 - 2 COLLECTOR-TO-EMITTER VOLTAGE (Voe)V 9203794 79F Fig. 7 - Typical output characteristics for all types. 194 Fig. 4 - oT-33-/S T/T #10 (2N62494, 8 (2N6250) 6(2Ne251) COLLECTOR CURRENT (I)A 92cs-19480R Typical base-to-emitter saturation voltage characteristics for all types. < o H K z w i 3 o re 9 w a Z a o BASE-TO- EMITTER VOLTAGE (Vp1V t 92C8-19477 Fig. 6 - Typical transfer characteristics for all types. : NORMALIZED TRANSIENT THEAMAL RESISTANCE Fig. 8 f TRANSISTOR SHOULD BE OPERATED WITHIN THE y LIMITS OF THE CURVE SHOWN IN FIGI oil ZO oor i OOo} oy a a Ld dott bo poi 0 001 ool ol to 100 TIME OR PULSE OURATIONms 9208-19485 ' - Typical thermal response characteristics for all types. |3875081 GE soLip state J dE 3875082 0037193 8 | ao, rign-vonage Power Transistors DURATION? 20 ps RATE?500 Hz COLLECTOR SUPPLY VOLTAGE {vcc)#200 v Isr CASE TEMPERATURE (Te }#25C T/Ip lO (2N6249), B(2NG250), 6 (2N62Z25I) RISE TIME (t-)ps COLLECTOR CURRENT (IclA 923-194848) Fig. 9 - Typical rise-time characteristics for all types. 220 ps REPETITION RATE*500 Hz COLLECTOR SUPPLY VOLTAGE (Vcc}*200 V CASE TEMPERATURE (To}#25C Tp,*! A (2N6249),125 A(2N6250} 2167 A STORAGE TIME {tg) pt COLLECTOR CURRENT [Ico ]A 92CS- 194839 Fig. 11 - Typical storage-time characteristics for ail types (with constant base drive). 7 REPETITION RATE*500 Ha COLLEGTOR SUPPLY VOLTAGE (Vcc}=200 V GASE TEMPERATURE (Tc}=25C Ig /Ig*t0(2N6249), 6 (2N6250), >~ w z - 4 a = COLLECTOR CURRENT (I }A 92c$-19489Rt Fig.13- Typical inductive- and resistive-ioad fall-time characteristics for all types. 2N6249, 2N6250, 2N6251 = 20 hs REPETITION RATE=500 He COLLECTOR SUPPLY VOLTAGE {Vcc }#200 Vv CASE TEMPERATURE (Tc) 25C Io/Ig lO (2N6249), 8 {2N6250), 6 (2N6251) STORAGE TIME {te)ps COLLECTOR CURRENT (I,)A 925-19482R1 Fig. 10- Typical storage-time characteristics for ail types (with constant forced gain). BS REPETITION RATE*500 Hr COLLECTOR SUPPLY VOLTAGE (cc}*200 V CASE TEMPERATURE (Tc }=25C Te /Epr10 {2N6249], 6(2N6250), 9 [ w z - 4 a < - COLLECTOR CURRENT (Ic!A 1. soagsm Fig. 12 - Typical fall-time charactaristic for all types. CHANNEL CLARE MERCURY RELAY A MODEL No HGP- 1004, OR EQUIVALENT un Vecoteun Y sus pevice | ER ceo UNDER TEST 14 nt 42 mH p}-O CHANNEL 2 a son in vew vew 6OHz ws 7 oO . Veet acer! oto s0v ($00 ma} +e v Tr 39 6v g2cs-194a? aw Fig. 14 - Circuit used to measure sustaining voltage Vceo(sus) and Veer(sus) for all types. 1953875081 G E soLtp state Ot DE B3ersaan OOL?LI4 O I> T-33-/5 High-Voltage Power Transistors 2N6249, 2N6250, 2N6251 COLLECTOR CURRENT (Ig)a 0 225 300375 COLLECTOR-TO-EMITTER VOLTAGE (Vcp) 92C5-19467R1 Ji The sustaining voltages Voge g (sus) and Vce plsus) J O08 pr are acceptable when the traces fall to the right of PULSE GENERATOR point A for type 2N6249, point B" for type 2N6250, and point "C for type 2N6251 (le = HEWLETT PACKARD MODEL Wo 214A, OR EQUIVALENT PULSE DURATION 2 20 ps 0.2 A). PULSE REPETITION RATE +800 Hz 92cs-194esmt Fig. 15 - Oscilloscope display for measurement of sustaining Fig. 16 - Circuit used to measure switching times for all types. voltages. } + KE Ig, +O wisi } TIME ae 1 T SYKC GUT an j Ig. ; INPUT WAVE FORM ~ J t I \ | AMPLIFIER l PULSE whe 8, wt GEHERATOR Aaorive lB i I x e 4 a Re | rest Gate [CALIBRATED ~ se | WUTC CEL AY Scorer 38 9208-19466 4a, aND te, MEASURED WITH TEKTRONIX CURRENT PROBE POl? OR EQUIVALENT TURN-ON Time 2208-1989651 OUTPUT WAVE FORM Fig. 17 - Phase relationship between input and output currents Fig. 18 - Circuit used to measure inductive-oad switching times showing reference points for specifications of switching for all types. times. 196