2N3251A
60 Volts
200 mAmps
Features
• Meets MIL-S-19500/323
• Collector-Base Voltage 60V
• Collector Current: 200 mA
• Fast Switching 370 nS
RATING SYMBOL MAX. UNIT
Collector-Emitter Voltage VCEO -60 Vdc
Collector-Base Voltage VCBO -60 Vdc
Emitter-Base Voltage VEBO -5.0 Vdc
Collector Current IC-200 mAdc
Total Device Dissipation
@ TA = 25oC
Derate above 25oC
PD0.36
2.4 Watts
mW/oC
Total Device Dissipation
@ TC = 25oC
Derate above 25oC
PD1.2
8Watts
mW/oC
Operating Temperature Range TJ-65 to
+175
oC
Storage Temperature Range TS-65 to
+175
oC
Thermal Resistance, Junction to Ambient RθJA 417 oC/W
Thermal Resistance, Junction to Case RθJC 146 oC/W
Maximum Ratings
Datasheet# MSC0281A 5/19/97
PNP
BIPOLAR
TRANSISTOR
580 Pleasant St.
Watertown, MA 02172
PH: (617) 926-0404
FAX: (617) 924-1235
Mechanical Outline
CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT
Off Characteristics
Collector-Emitter Breakdown Voltage(1) (I C = -10 mAdc) BVCEO -60 -- Vdc
Collector-Base Breakdown Voltage (IC = -10 µAdc) BVCBO -60 -- Vdc
Emitter-Base Breakdown Voltage (IE = -10 µAdc) BVEBO -5.0 -- Vdc
Collector Cutoff Current (VCE = -40 Vdc, VEB = -3.0 Vdc)
( at 150 C ) ICEX -- -20
-20 nA
uA
Base Cutoff Current (VCE = -40 Vdc, VEB = -3.0 Vdc) IBEX -- -50 nAdc
D.C. Current Gain
(IC = -0.1 mAdc, VCE = -1.0 Vdc)
(IC = -1.0 mAdc, VCE = -1.0 Vdc)
(Ic = -1.0mAdc, VCE= -1.0Vdc) @ -55C
(IC = -10 mAdc, VCE = -1.0 Vdc)(1)
(IC = -50 mAdc, VCE = -1.0 Vdc)(1)
hFE
80
90
40
100
30
--
--
--
300
--
--
Collector-Emitter Saturation Voltage(1)
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
VCE(Sat) --
-- -0.25
-0.5
Vdc
Base-Emitter Saturation Voltage(1)
(IC = -10 mAdc, IB = -1.0 mAdc)
(IC = -50 mAdc, IB = -5.0 mAdc)
VBE(Sat) -0.6
-- -0.9
-1.2
Vdc
Magnitude of common emitter small-signal short-circuit forward current
transfer ratio
(IC = -10 mAdc, VCE = -20 Vdc, f = 100MHz) /hfe/3.0 9.0
Output Capacitance
(VCB = -10 Vdc, IE = 0, 100kHz < f < 1MHz) COBO -- 6.0 pf
Input Capacitance
(VEB = -10 Vdc, IC = 0, 100kHz < f < 1MHz) CIBO -- 8.0 pf
Input Impedance
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz) hje 2.0 12 kohms
Voltage Feedback Ratio
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz) hre -- 20 x 10-4
Small—Signal Current Gain
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz) hfe 100 400 --
Output Admittance
(IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz) hoe 10 60 µmhos
Collector Base Time Constant
(IC = -10 mA, VCE = -20 V, f = 31.8 MHz) rb’CC5 250 ps
Noise Figure
(IC = -100 µA, VCE = -5.0 V, RS = 1.0k Ω, f = 100 Hz) NF -- 6.0 dB
Switching Speeds
(VCC = -3.0 Vdc, VBE = +0.5 Vdc
IC = -10 mAdc, IB1 = -1.0 mA)
ton -- 70 ns
(VCC = -10 mAdc, IB1 = IB1 = -1.0 mAdc)
(VCC = -3.0 V) toff -- 300 ns
Electrical Parameters (TA @ 25°°C unless otherwise specified)
2N3251A
(1) Pulse Test: PW = 300 µs, Duty Cycle = 2.0%
Datasheet# MSC0281A 5/19/97
