45 4$5 Preferred Device (& ( + (*+'& ) This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications. http://onsemi.com 0 Features * * * * Pb-Free Package is Available Fast trr, < 3.0 ns Low CD, < 2.0 pF Available in 8 mm Tape and Reel Use M1MA141/2KT1 to order the 7 inch/3000 unit reel Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage M1MA141KT1 Symbol Value Unit VR 40 Vdc M1MA142KT1 Peak Reverse Voltage M1MA141KT1 M1MA142KT1 Forward Current Peak Forward Current Peak Forward Surge Current 2 Vdc 40 80 IF 100 mAdc IFM 225 mAdc IFSM (Note 2) 500 mAdc Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating 1 80 VRM MARKING DIAGRAM 3 Symbol Max Unit Power Dissipation PD 150 mW Junction Temperature TJ 150 C Storage Temperature Tstg -55 ~ + 150 C 2. t = 1 sec xxM SC-70 (SOT-323) CASE 419 STYLE 2 xx M = MH for 141 = MI for 142 = Date Code ORDERING INFORMATION Package Shipping M1MA141KT1 SC-70 3000/Tape & Reel M1MA142KT1 SC-70 3000/Tape & Reel SC-70 (Pb-Free) 3000/Tape & Reel Device M1MA142KT1G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 July, 2004 - Rev. 5 673 Publication Order Number: M1MA141KT1/D M1MA141KT1, M1MA142KT1 ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Reverse Voltage Leakage Current M1MA141KT1 Symbol Condition Min Max Unit IR VR = 35 V - 0.1 mAdc VR = 75 V - 0.1 VF IF = 100 mA - 1.2 Vdc VR IR = 100 mA 40 - Vdc 80 - M1MA142KT1 Forward Voltage Reverse Breakdown Voltage M1MA141KT1 M1MA142KT1 Diode Capacitance Reverse Recovery Time (Figure 1) CD VR = 0, f = 1.0 MHz - 2.0 pF trr (Note 3) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR - 3.0 ns 3. trr Test Circuit http://onsemi.com 674 M1MA141KT1, M1MA142KT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE ;< OUTPUT PULSE ;( ; ;<< ) ; = << = IF = 10 mA VR = 6 V RL = 100 W tp = 2 ms tr = 0.35 ns Figure 1. Recovery Time Equivalent Test Circuit # $ # ) ) : # Figure 2. Forward Voltage Figure 3. Reverse Current # ' () )) : @$ $ $ Figure 4. Diode Capacitance http://onsemi.com 675 # $