Semiconductor Components Industries, LLC, 2004
July, 2004 − Rev. 5 673 Publication Order Number:
M1MA141KT1/D
45
4$5
Preferred Device
(& (+ (*+'&
)
This Silicon Epitaxial Planar Diode is designed for use in ultra high
speed switching applications. This device is housed in the SC−70
package which is designed for low power surface mount applications.
Features
•Pb−Free Package is Available
•Fast trr, < 3.0 ns
•Low CD, < 2.0 pF
•Available in 8 mm Tape and Reel
Use M1MA141/2KT1 to order the 7 inch/3000 unit reel
Use M1MA141/2KT3 to order the 13 inch/10,000 unit reel
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage M1MA141KT1 VR40 Vdc
M1MA142KT1 80
Peak Reverse Voltage M1MA141KT1 VRM 40 Vdc
M1MA142KT1 80
Forward Current IF100 mAdc
Peak Forward Current IFM 225 mAdc
Peak Forward Surge Current IFSM 500 mAdc
FSM
(Note 2)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD150 mW
Junction Temperature TJ150 °C
Storage Temperature Tstg −55 ~ +150 °C
2. t = 1 sec
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Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping†
ORDERING INFORMATION
M1MA141KT1 SC−70 3000/Tape & Reel
M1MA142KT1 SC−70
SC−70 (SOT−323)
CASE 419
STYLE 2
3000/Tape & Reel
MARKING
DIAGRAM
xx = MH for 141
= MI for 142
M = Date Code
12
3
xxM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
M1MA142KT1G SC−70
(Pb−Free) 3000/Tape & Reel
0
M1MA141KT1, M1MA142KT1
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674
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current M1MA141KT1 IRVR = 35 V −0.1 mAdc
M1MA142KT1 VR = 75 V −0.1
Forward Voltage VFIF = 100 mA −1.2 Vdc
Reverse Breakdown Voltage M1MA141KT1 VRIR = 100 mA40 −Vdc
M1MA142KT1 80 −
Diode Capacitance CDVR = 0, f = 1.0 MHz −2.0 pF
Reverse Recovery Time (Figure 1) trr
(Note 3) IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR−3.0 ns
3. trr Test Circuit
M1MA141KT1, M1MA142KT1
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675
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tr = 0.35 ns
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IF = 10 mA
VR = 6 V
RL = 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
Figure 1. Recovery Time Equivalent Test Circuit
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Figure 2. Forward Voltage Figure 3. Reverse Current
Figure 4. Diode Capacitance
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