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Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2101M16
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
Document No. PU10395EJ03V0DS (3rd edition)
Date Published September 2009 NS
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
high-gain amplification
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
ORDERING INFORMATION
6-pin lead-less minimold
(M16, 1208 PKG)
(Pb-Free)
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Collector to Base Voltage
Collector to Emitter Voltage
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB