The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SILICON GERMANIUM RF TRANSISTOR
NESG2101M16
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (125 mW)
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
Document No. PU10395EJ03V0DS (3rd edition)
Date Published September 2009 NS
FEATURES
• The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
high-gain amplification
PO (1 dB) = 21 dBm TYP. @ VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f = 2 GHz
NF = 0.6 dB TYP., Ga = 19.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 1 GHz
• Maximum stable power gain: MSG = 17.0 dB TYP. @ VCE = 3 V, IC = 50 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG2101M16
NESG2101M16-A
6-pin lead-less minimold
(M16, 1208 PKG)
(Pb-Free)
50 pcs
(Non reel)
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the
perforation side of the tape
NESG2101M16-T3
NESG2101M16-T3-A
10 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Symbol
Ratings
Unit
VCBO
13.0
V
VCEO
5.0
V
VEBO
1.5
V
IC
100
mA
Ptot Note
190
mW
Tj
150
C
Tstg
65 to +150
C
Note Mounted on 1.08 cm2 1.0 mm (t) glass epoxy PCB
<R>
Data Sheet PU10395EJ03V0DS
2
NESG2101M16
ELECTRICAL CHARACTERISTICS (TA = +25C)
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
ICBO
VCB = 5 V, IE = 0 mA
100
nA
IEBO
VEB = 1 V, IC = 0 mA
100
nA
hFE Note 1
VCE = 2 V, IC = 15 mA
130
190
260
RF Characteristics
fT
VCE = 3 V, IC = 50 mA, f = 2 GHz
14
17
GHz
S21e2
VCE = 3 V, IC = 50 mA, f = 2 GHz
11.5
13.5
dB
NF
VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
0.9
1.2
dB
NF
VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
0.6
dB
Ga
VCE = 2 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
11.0
13.0
dB
Ga
VCE = 2 V, IC = 7 mA, f = 1 GHz,
ZS = ZSopt, ZL = ZLopt
19.0
dB
Cre Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.4
0.5
pF
MSG Note
3
VCE = 3 V, IC = 50 mA, f = 2 GHz
14.5
17.0
dB
PO (1 dB)
VCE = 3.6 V, IC (set) = 10 mA (RF OFF), f
= 2 GHz, ZS = ZSopt, ZL = ZLopt
21
dBm
GL
VCE = 3.6 V, IC = 10 mA, f = 2 GHz,
ZS = ZSopt, ZL = ZLopt
15
dBm
Notes 1. Pulse measurement: PW 350
s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank
FB/YFB
Marking
zH
hFE Value
130 to 260
S21
S12
<R>
Data Sheet PU10395EJ03V0DS
3
NESG2101M16
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
<R>
Data Sheet PU10395EJ03V0DS
4
NESG2101M16
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
5
NESG2101M16
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
6
NESG2101M16
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
7
NESG2101M16
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
8
NESG2101M16
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
9
NESG2101M16
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
10
NESG2101M16
Remark The graphs indicate nominal characteristics.
Data Sheet PU10395EJ03V0DS
11
NESG2101M16
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
<R>
12 Data Sheet PU10395EJ03V0DS
NESG2101M16
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) (UNIT: mm)
Caution All four Emitter-pins should be connected to PWB in order to obtain better Electrical
performance and heat sinking.