http://www.fujielectric.com/products/semiconductor/ 7MBR15VKA060-50 IGBT Modules IGBT MODULE (V series) 600V / 10A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless otherwise specified) Items Symbols Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Converter Brake Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Collector power dissipation Repetitive peak reverse voltage (Diode) Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I2t (Non-Repetitive) Conditions VCES VGES Ic Icp -Ic -Ic pulse PC VCES VGES IC ICP PC VRRM VRRM IO IFSM I2 t Junction temperature Tj Operating junciton temperature (under switching conditions) Tjop Case temperature Storage temperature TC Tstg Continuous 1ms TC =100C TC =80C 1ms 1 device Continuous 1ms 1 device TC =80C TC =80C 50Hz/60Hz, sine wave 10ms, Tj =150C half sine wave Inverter, Brake Converter Inverter, Brake Converter Isolation voltage between terminal and copper base (*1) Viso between thermistor and others (*2) AC : 1min. Screw torque Mounting (*3) M4 - Maximum ratings 600 20 15 30 15 30 85 600 20 15 30 85 600 800 15 360 660 175 150 150 150 125 -40 to +125 Units V V A W V V A W V V A A A2 s C 2500 VAC 1.7 Nm Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 1.3-1.7 Nm (M4) 1 1541 NOVEMBER 2013 7MBR15VKA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Electrical characteristics (at Tj= 25C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols Conditions ICES IGES VGE (th) VGE = 0V, VCE = 600V VCE = 0V, VGE = 20V VCE = 20V, IC = 15mA VCE (sat) (terminal) VGE = 15V IC = 15A VCE (sat) (chip) VGE = 15V IC = 15A Rg(int) Cies ton tr tr (i) toff tf - Inverter Collector-Emitter saturation voltage Internal gate resistance Input capacitance Turn-on time Turn-off time VF (terminal) VCE = 10V, VGE = 0V, f = 1MHz VCC = 300V IC = 15A VGE = +15 / -15V RG = 22 Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C IF = 15A Forward on voltage Brake Units mA nA V V nF s V VF (chip) IF = 15A trr IF = 15A Zero gate voltage collector current ICES VGE = 0V VCE = 600V - - 1.0 mA Gate-Emitter leakage current IGES VCE = 0V VGE = +20 / -20V - - 200 nA VCE (sat) (terminal) VGE = 15V IC = 15A - 1.95 2.35 2.45 1.75 2.15 2.25 0 0.08 0.06 0.14 0.02 1.20 1.00 5000 495 3375 2.35 2.15 1.20 0.60 1.20 0.45 1.00 1.65 1.00 520 3450 Reverse recovery time Collector-Emitter saturation voltage Internal gate resistance Turn-on time Turn-off time Reverse current Thermistor Converter Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C Characteristics min. typ. max. 1.0 200 6.2 6.7 7.2 1.95 2.35 2.35 2.45 1.75 2.15 2.15 2.25 0 0.9 0.08 1.20 0.06 0.60 0.02 0.14 1.20 0.02 0.45 1.95 2.35 1.90 1.90 1.75 2.15 1.70 1.70 0.35 VCE (sat) (chip) VGE = 15V IC = 15A Rg(int) ton tr toff tf IRRM - Tj=25C Tj=125C Tj=150C Tj=25C Tj=125C Tj=150C VCE = 300V IC = 15A VGE = +15 / -15V RG = 22 VR = 600V terminal chip Forward on voltage VFM IF = 15A Reverse current IRRM Resistance R B value B VR = 800V T = 25C T = 100C T = 25 / 50C Symbols Conditions 465 3305 s V s mA V mA K Thermal resistance characteristics Items Thermal resistance (1device) Rth(j-c) Contact thermal resistance (1device) (*4) Rth(c-f) Inverter IGBT Inverter FWD Brake IGBT Converter Diode with Thermal Compound Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 Characteristics min. typ. max. 1.80 2.31 1.80 1.35 0.05 - Units C/W 7MBR15VKA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip Tj= 150oC / chip 30 30 Collector current: IC [A] 25 VGE=20V 12V 15V 20 15 10V 10 5 12V 20 15 10V 10 5 8V 0 8V 0 0 1 2 3 4 5 0 1 Collector-Emitter voltage: VCE[V] 4 5 Tj= 25C / chip 8 Tj=25oC Tj=150oC 25 Collector current: IC [A] 3 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Collector - Emitter voltage: VCE [V] 30 2 Collector-Emitter voltage: VCE[V] [ Inverter ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj=125oC 20 15 10 5 0 6 4 Ic=30A Ic=15A Ic=8A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter voltage: VCE[V] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.00 Cies Cres 0.10 Coes 0.01 0 10 20 20 25 [ Inverter ] Dynamic gate charge (typ.) Vcc=300V Ic=15ATj= 25C VGE=0V, f= 1MHz, Tj= 25C 1.00 15 Gate - Emitter voltage: VGE [V] [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 15V 25 Collector current: IC [A] VGE=20V 30 VCE VGE 0 -50 Collector - Emitter voltage: VCE [V] -25 0 Gate charge: Qg [nC] 3 25 50 7MBR15VKA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300VVGE=15VRg=22Tj= 150C 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300VVGE=15VRg=22Tj= 125C toff 100 ton tr tf 10 1000 toff 100 tr 10 20 30 40 0 Collector current: IC [A] Switching loss : Eon, Eoff, Err [mJ/pulse] 1000 toff 100 ton tr tf 10 10 100 Err(125oC) 0.3 Eon(125oC) o Eon(150 C) 0.0 30 40 50 Collector current: IC [A] Eoff(150oC) Eoff(125oC) Err(150oC Err(125oC 40 30 20 RBSOA (Repetitive pulse) 10 0 0.0 100 20 [ Inverter ] Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 22 ,Tj = 150C 0.6 10 10 Collector current: IC [A] 0.8 0.2 40 Err(150oC) 0 Eon(150oC) Eon(125oC) 0.4 30 Eoff(125oC) Eoff(150oC) 0.6 1000 [ Inverter ] Switching loss vs. gate resistance (typ.) Vcc=300VIc=15AVGE=15V 1.0 20 Collector current: IC [A] 0.9 Gate resistance : Rg [] 1.2 10 [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300VVGE=15VRg=22 [ Inverter ] Switching time vs. gate resistance (typ.) Vcc=300VIc=15AVGE=15VTj= 125C Switching loss : Eon, Eoff, Err [mJ/pulse] tf 10 0 Switching time : ton, tr, toff, tf [ nsec ] ton 0 1000 200 400 600 Collector-Emitter voltage : VCE [V] Gate resistance : Rg [] (Main terminals) 4 800 7MBR15VKA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300VVGE=15VRg=22 [ Inverter ] Forward current vs. forward on voltage (typ.) chip Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [A] 30 25 20 15 Tj=150 10 Tj=125oC Tj=25oC 5 0 0 1 2 3 100 Irr(150oC) Irr(125oC) trr(150ooC) trr(125 C) 10 1 0 4 5 10 15 20 25 30 35 40 Forward current : IF [A] Forward on voltage : VF [V] [ Converter ] Forward current vs. forward on voltage (typ.) chip 30 Forward current : IF [A] 25 20 15 Tj=125oC 10 Tj=25 oC 5 0 0.0 0.5 1.0 1.5 2.0 Forward on voltage : VFM [V] [ Thermistor ] Temperature characteristic (typ.) 10.00 100 4 Zth = rn 1 - e - t n IGBT[Inverter, Brake] n =1 FWD[Inverter] Resistance : R [k] Thermal resistanse : Rth(j-c) [ C/W ] Transient thermal resistance (max.) Conv. Diode 1.00 0.10 n n rn [C/W] 0.01 0.001 [sec] IGBT FWD B-IGBT Conv 1 2 3 4 0.0001 0.0021 0.0133 0.1247 0.11596 0.18065 1.30550 0.19789 0.14889 0.11596 0.08720 0.23195 0.18065 0.13585 1.67626 1.30550 0.98174 0.25409 0.19789 0.14881 0.010 0.100 10 1 0.1 1.000 Pulse width : Pw [sec] -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Temperature [C ] 5 7MBR15VKA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25oC / chip 30 Tj= 150oC / chip 30 15V VGE=20V VGE=20V 12V 20 15 10V 10 5 12V 20 15 10 10V 5 8V 8V 0 0 0 1 2 3 4 5 0 1 Collector-Emitter voltage: VCE[V] 3 4 5 Collector-Emitter voltage: VCE[V] [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) 30 8 Tj= 25C / chip Collector - Emitter voltage: VCE [V] Tj=150oC 25 Collector current: IC [A] 2 [ Brake ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj=25oC Tj=125oC 20 15 10 5 0 6 4 Ic=30A Ic=15A Ic=8A 2 0 0 1 2 3 4 5 5 10 Collector-Emitter voltage: VCE[V] Collector - Emitter voltage: VCE [200V/div] Gate - Emitter voltage: VGE [5V/div] 10.00 Cies Cres 0.10 Coes 0.01 0 10 20 20 25 [ Brake ] Dynamic gate charge (typ.) Vcc=300V Ic=15ATj= 25C VGE=0V, f= 1MHz, Tj= 25oC 1.00 15 Gate - Emitter voltage: VGE [V] [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) Capacitance: Cies, Coes, Cres [nF] 15V 25 Collector current: IC [A] Collector current: IC [A] 25 30 VCE 0 -100 Collector - Emitter voltage: VCE [V] VGE -50 0 Gate charge: Qg [nC] 6 50 100 7MBR15VKA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ Outline Drawings, mm Weight: 25g(typ.) Equivalent Circuit Schematic [ Converter ] [ Brake] 7 [ Inverter ] [ Thermistor ] 7MBR15VKA060-50 IGBT Modules http://www.fujielectric.com/products/semiconductor/ WARNING 1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of November 2013. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Measurement equipment * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment * Industrial robots etc. 5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. * Transportation equipment (mounted on cars and ships) * Trunk communications equipment * Traffic-signal control equipment * Gas leakage detectors with an auto-shut-off feature * Emergency equipment for responding to disasters and anti-burglary devices * Safety devices * Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). * Space equipment * Aeronautic equipment * Nuclear control equipment * Submarine repeater equipment 7. Copyright (c)1996-2013 by Fuji Electric Co., Ltd. All rights reserved. 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