BGA2817,115 - NXP Semiconductors

1. Product profile

1.1 General description

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal

matching circuit in a 6-pin SOT363 plastic SMD package.

1.2 Features and benefits

Internally matched to 50 

A gain of 25.1 dB at 2150 MHz

Output power at 1 dB gain compression = 5 dBm at 2150 MHz

Supply current = 20.0 mA at a supply voltage of 3.3 V

Reverse isolation > 35 dB up to 2150 MHz

Good linearity with low second order and third order products

Noise figure = 3.9 dB at 950 MHz

Unconditionally stable (K > 1)

No output inductor required

1.3 Applications

LNB IF amplifiers

General purpose low noise wideband amplifier for frequencies between

DC and 2.2 GHz

2. Pinning information

BGA2817

MMIC wideband amplifier

Rev. 2 — 19 April 2012 Product data sheet

Table 1. Pinning

Pin Description Simplified outline Graphic symbol

2, 5 GND2

3RF_OUT

4 GND1

6RF_IN

132

sym052

2, 5

Product data sheet Rev. 2 — 19 April 2012 2 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

Tabl e 2. Ordering information

Type number Package

Name Description Version

BGA2817 - plastic surface-mounted package; 6 leads SOT363

Table 3. Marking

Type number Marking code Description

BGA2817 LS* * = - : made in Hong Kong

* = p : made in Hong Kong

* = W : made in China

* = t : made in Malaysia

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCC supply voltage RF input AC coupled 0.5 4.5 V

ICC supply current - 55 mA

Ptot total power dissipation Tsp = 90 C-200mW

Tstg storage temperature 40 +125 C

Tjjunction temperature - 125 C

Pdrive drive power - 16.5 dBm

Table 5. Thermal characteris tics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to

solder point Ptot = 200 mW; Tsp =90C 300 K/W

Table 6. Characteristics

VCC = 3.3 V; ZS = ZL = 50



; Pi =



40 dBm; Tamb = 25



C; measured on demo board; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage 3.0 3.3 3.6 V

ICC supply current 17.6 20.0 22.2 mA

Product data sheet Rev. 2 — 19 April 2012 3 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

Gppower gain f = 250 MHz 23.9 24.5 25.1 dB

f = 950 MHz 23.9 24.7 25.4 dB

f = 2150 MHz 23.7 25.1 26.6 dB

RLin input return loss f = 250 MHz 13 15 17 dB

f = 950 MHz 141618dB

f = 2150 MHz 12 19 26 dB

RLout output return loss f = 250 MHz 13 18 22 dB

f = 950 MHz 171819dB

f = 2150 MHz 12 15 18 dB

ISL isolation f = 250 MHz 48 69 89 dB

f = 950 MHz 474950dB

f = 2150 MHz 33 35 37 dB

NF noise figure f = 250 MHz 3.4 3.9 4.4 dB

f = 950 MHz 3.5 3.9 4.3 dB

f = 2150 MHz 3.4 3.8 4.2 dB

B3dB 3 dB bandwidth 3 dB below gain at 1 GHz 3.2 3.4 3.6 GHz

K Rollett stability factor f = 250 MHz 51 78 106

f = 950 MHz 6 8 9

f = 2150 MHz 1 2 2

PL(sat) saturated output power f = 250 MHz 8 8 9 dBm

f = 950 MHz 5 7 8 dBm

f = 2150 MHz 5 6 7 dBm

PL(1dB) output power at 1 dB gain compression f = 250 MHz 6 6 7 dBm

f = 950 MHz 5 6 7 dBm

f = 2150 MHz 4 5 7 dBm

IP3Iinput third-order intercept point Pdrive =40 dBm (for each tone)

f1= 250 MHz; f2= 251 MHz 975dBm

f1= 950 MHz; f2= 951 MHz 975dBm

f1=2150MHz; f

2=2151MHz 13 10 7dBm

IP3Ooutput third-order intercept point Pdrive =40 dBm (for ea ch tone)

f1= 250 MHz; f2=251MHz 161820dBm

f1= 950 MHz; f2=951MHz 161820dBm

f1=2150MHz; f

2= 2151 MHz 12 15 18 dBm

PL(2H) second harmonic output power Pdrive =28 dBm

f1H = 250 MHz; f2H =500MHz 55 53 51 dBm

f1H = 950 MHz; f2H =1900MHz 47 45 44 dBm

IM2 second-order intermodulation distance Pdrive =31 dBm (for each tone)

f1= 250 MHz; f2=251MHz 343639dBc

f1= 950 MHz; f2=951MHz 383941dBc

Table 6. Characteristics …continued

VCC = 3.3 V; ZS = ZL = 50



; Pi =



40 dBm; Tamb = 25



C; measured on demo board; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 2 — 19 April 2012 4 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

8. Application information

Figure 1 shows a typical application circuit for the BGA2817 MMIC. The device is

internally matched to 50 , and therefore does not need any externa l matching. The value

of the input and outpu t DC blocking cap acitors C2 and C3 should not be m ore than 100 pF

for applications above 100 MHz. However, when the device is operated below 100 MHz,

the capacitor value should be increased.

The 22 nF supply decoupling capacitor C1 should be located as close as possible to the

MMIC.

The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to

the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes

as close as possible to the MMIC.

8.1 Application examples

8.2 Tables

Fig 1. Typical application circ uit

001aaf761

RF_OUTRF_IN

GND2

GND1

RF outputRF input C3C2

The MMIC is very suitable as IF amplifier in e.g. LNB’s.

The excellent wideband characteristics make it an easy

building block.

As second amplifier after an LNA, the MMIC offers an

easy matching, low noise solution.

Fig 2. Application as IF amplifier Fig 3. Application as RF amplifier

001aaf762

from RF

circuit

oscillator

wideband

amplifier to IF circuit

or demodulator

mixer

001aaf763

antenna

oscillator

wideband

amplifier

LNA to IF circuit

or demodulator

mixer

Table 7. Supply current over temp erature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 25 85

ICC supply current VCC = 3.0 V 18.0 17.6 17.3 mA

VCC = 3.3 V 20.4 20.0 19.6 mA

VCC = 3.6 V 22.7 22.2 21.7 mA

Product data sheet Rev. 2 — 19 April 2012 5 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

Table 8. Second harmonic outp ut p ower over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 25 85

PL(2H) second harmonic output power f = 250 MHz; Pdrive =28 dBm

VCC =3.0V 38 44 52 dBm

VCC =3.3V 45 53 60 dBm

VCC =3.6V 56 59 53 dBm

f = 950 MHz; Pdrive =28 dBm

VCC =3.0V 43 53 45 dBm

VCC =3.3V 51 45 41 dBm

VCC =3.6V 44 41 39 dBm

Table 9. Input power at 1 dB gain compression over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 25 85

Pi(1dB) input power at 1 dB gain compression f = 250 MHz

VCC =3.0V 19 18 18 dBm

VCC =3.3V 17 17 17 dBm

VCC =3.6V 16 16 16 dBm

f = 950 MHz

VCC =3.0V 19 18 18 dBm

VCC =3.3V 18 17 17 dBm

VCC =3.6V 17 17 17 dBm

f = 2150 MHz

VCC =3.0V 20 20 20 dBm

VCC =3.3V 19 19 20 dBm

VCC =3.6V 18 19 20 dBm

Product data sheet Rev. 2 — 19 April 2012 6 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

Table 10. Output power at 1 dB gain compress ion over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 25 85

PL(1dB) output power at 1 dB gain compression f = 250 MHz

VCC =3.0V 4 5 5 dBm

VCC =3.3V 6 6 6 dBm

VCC =3.6V 8 8 7 dBm

f = 950 MHz

VCC =3.0V 4 4 4 dBm

VCC =3.3V 6 6 6 dBm

VCC =3.6V 7 7 7 dBm

f = 2150 MHz

VCC =3.0V 4 4 3 dBm

VCC =3.3V 6 5 4 dBm

VCC =3.6V 7 6 5 dBm

Table 11. S aturated output power over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 25 85

PL(sat) saturated output power f = 250 MHz

VCC =3.0V 667dBm

VCC =3.3V 888dBm

VCC =3.6V 999dBm

f = 950 MHz

VCC =3.0V 666dBm

VCC =3.3V 777dBm

VCC =3.6V 788dBm

f = 2150 MHz

VCC =3.0V 554dBm

VCC =3.3V 765dBm

VCC =3.6V 876dBm

Product data sheet Rev. 2 — 19 April 2012 7 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

Table 12. Second-order intermodulation distance over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 25 85

IM2 second-order intermodulation distance f1= 250 MHz;

f2= 251 MHz;

Pdrive =31 dBm

VCC =3.0V 28 3236dBc

VCC =3.3V 33 3640dBc

VCC =3.6V 38 4044dBc

f1= 950 MHz;

f2= 951 MHz;

Pdrive =31 dBm

VCC =3.0V 29 3440dBc

VCC =3.3V 35 3943dBc

VCC =3.6V 40 4442dBc

Table 13. Output third-orde r intercept point over temperatu re and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 25 85

IP3Ooutput third-order intercept point f1=250MHz;

f2=251MHz;

Pdrive =40 dBm

VCC =3.0V 14 15 16 dBm

VCC =3.3V 18 18 17 dBm

VCC =3.6V 19 19 19 dBm

f1=950MHz;

f2=951MHz;

Pdrive =40 dBm

VCC =3.0V 15 16 15 dBm

VCC =3.3V 18 18 17 dBm

VCC =3.6V 20 20 18 dBm

f1=2150MHz;

f2=2151MHz;

Pdrive =40 dBm

VCC =3.0V 15 14 12 dBm

VCC =3.3V 17 15 13 dBm

VCC =3.6V 18 16 13 dBm

Table 14. 3 dB bandwidth over temperature and supply voltages

Typical values.

Symbol Parameter Conditions Tamb (C) Unit

40 25 85

B3dB 3 dB bandwidth VCC = 3.0 V 3.50 3.39 3.24 GHz

VCC = 3.3 V 3.49 3.37 3.22 GHz

VCC = 3.6 V 3.48 3.36 3.21 GHz

Product data sheet Rev. 2 — 19 April 2012 8 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

9. Test information

True size = 30 mm  30 mm.

Fig 4. PCB layout and demo board with components

001aal226

IC1

30 mm

Table 15. List of components used for the typical application

Component Description Value Dimensions

C1, C2 multilayer ceramic chip capacitor 100 pF 0603

C3 multilayer ceramic chip capacitor 22 nF 0603

IC1 BGA2817 MMIC SOT363

Product data sheet Rev. 2 — 19 April 2012 9 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

10. Package outline

Fig 5. Package outline SOT363

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT363 SC-88

wBM

pin 1

index A

detail X

vMA

0 1 2 mm

scale

132

456

Plastic surface-mounted package; 6 leads SOT363

UNIT A1

max bpcDEe1HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

04-11-08

06-03-16

Product data sheet Rev. 2 — 19 April 2012 10 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

11. Abbreviations

12. Revision history

Table 16. Abbreviations

Acronym Description

DC Direct Current

IF Intermediate Frequency

LNA Low-Noise Amplifier

LNB Low-Noise Block converter

PCB Printed-Circuit Board

RF Radio Frequency

SMD Surface Mounted Device

Table 17. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BGA2817 v.2 20120419 Product data sheet - BGA2817 v.1

Modifications •Table 5 on page 2: The maximum value for VCC has been changed to 4.5 V

BGA2817 v.1 20111117 Product data sheet - -

Product data sheet Rev. 2 — 19 April 2012 11 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

13. Legal information

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[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product st atus of de vice(s) d escribed in th is docume nt may have changed since this docume nt was pub lished and may dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

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full information. For detailed and full information see the relevant full data

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data sheet shall define the specification of the product as agreed between

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress rating s only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

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Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 19 April 2012 12 of 13

NXP Semiconductors BGA2817

MMIC wideband amplifier

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14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BGA2817

MMIC wideband amplifier

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 19 April 2012

Document identifier: BGA2817

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2

8 Application information. . . . . . . . . . . . . . . . . . . 4

8.1 Application examples . . . . . . . . . . . . . . . . . . . . 4

8.2 Tables. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

9 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13