MITSUBISHI Nch POWER MOSFET FS70VSJ-06 HIGH-SPEED SWITCHING USE FS70VSJ-06 OUTLINE DRAWING Dimensions in mm a 10.5MAX. eo Dubpneatahdanlidananee a | i | \ o i, 08 mt fe 0-8 \ oy + ap Poe B Ss, | a wi oe 24 ol i e4V DRIVE iT GATE 4, 2) DRAIN @VMDSS cece cece cence eee tweeter ener e eee nee 60V ae 4, SOURCE O D @ FDS (ON) (MAX) cree tenet nett e tener eee eee es 7mQ DRAIN DD rrr c cece eet e eee e eee e teen een ate n ene tet renee 7OA Os integrated Fast Recovery Diode (TYP.) ------ 90ns TO-2208 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Tec = 25C) Symbol Parameter Conditions Ratings Unit Voss Drain-source voltage Vas = 0V 60 v Vass Gate-source voltage Vos = OV +20 Vv ip Drain current 70 A IDM Drain current (Pulsed) 280 A IDA Avalanche drain current (Pulsed) | L = 100nH 70 A Is Source current 70 A ism Source current (Pulsed) 280 A Pp Maximum power dissipation 125 Ww Toh Channel! temperature 85 ~ +150 C Tstg Storage temperature iL ~55 ~ +150 C _ Weight | Typical vaiue 1.2 g 2 - 522 MITSUBISHI ELECTRICMITSUBISHI Nch POWER MOSFET FS70VSJ-06 ELECTRICAL CHARACTERISTICS (Teh = 25C) HIGH-SPEED SWITCHING USE imit Symbol Parameter Test conditions - Limits Unit Min. Typ. Max. V (eA) Oss | Drain-source breakdown voltage _| ID = 1mA, Vos = OV 60 Vv lass Gate leakage current Vas = +20V, Vos = OV _ _ +0.1 LA Ipss Drain current Vos = 60V, Vas = OV _ _ 0.1 mA VS (th) Gate-source threshold voltage ID = 1mA, Vos = 10V 1.0 1.5 2.0 Vv FDS (ON) Drain-source on-state resistance | !D = 35A, Vas = 10V 5.4 7.0 mo rDS (ON) _| Drain-source or-state resistance | ID = 35A, Vas = 4V _ 6.5 8.4 mQ YDS (ON) | Drain-source on-state voltage | [0 = 35A, Vas = 10V 0.19 0.25 Vv | yts | Forward transfer admittance | lb = 35A, Vos = 10V 65 8 Ciss Input capacitance =~ 8200 ~ pF Coss Output capacitance Vds = 10V, VGS = OV, f= 1MHz 1600 _ pF Crss Reverse transfer capacitance 860 _ pF td (on) Turn-on delay time _ 54 _ ns tr Rise time ___ VoD = 30V, ID = 35A, Vas = 10V, RGEN = R@s = 502 = 150 = ns td (off Turn-off delay time 800 _ ns tt Fail time coal 380 _ ns Vsb Source-drain voltage iS = 35A, Vas = OV -_ 1.0 1.5 v Rth(ch-c) | Thermal resistance Channel to case _ _ 1.0 CW tre Reverse recovery time \s = 70A, dis/dt = ~100A/us = 90 _ ns PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 3 2 tw=1 = 102 o 160 < 7 a x 5 100us z _ 3 2 120 a 2 4ms < a 101 D & 7 10ms a 80 mo. 8 : z 3 uw bs 2 oc 3 40 G 490 a ZP Te = 25C 5 Pulse a) 50 100 150 200 33 57100 23 5710' 23 57102 23 CASE TEMPERATURE Te (C) DRAIN-SOURCE VOLTAGE Vps (V) OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) = =f 100 Ves - 50 Ves = 10V 5V 4V - 3.5V = SY Pulse Test ~ in| )* ~ < 80 <= 40 Po = 125W Ko 2 bt kK 60 30 3 40 G 20 Zz = < < x a 20 qa 10 To = 25C Puise Test 0 % 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 08 1.0 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 523 ELECTRICMITSUBISHI Nch POWER MOSFET FS70VSJ-06 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL} 10 Te = 28C 10.0 25C Pulse Test Pulse Test ui) Lu e eS 08 ee 8.0 ko E> Ye HZ zo ze Sy 06 O2 60 W $ ~4. l= 100A Wy = i cw aS 04 70A Be 40 Os Oe Za Zo E> 02 20 a oc oO 0 0 2 4 6 8 10 3.57100 23 5710! 23 57102 23 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 100 To = 26C To =25C Vos = 1.0V z 80 Puise Test xg a Tet Gz = = 60 < j EY 5 re a 40 < E 3 53 5 20 re Vog = 10V Pulse Test 0 400 0 2 4 6 8 10 10 2 3 #5 710) 23 5 7 102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT Ip (A) CAPACITANCE vs. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 2 h = 25C 10 ch = 105 = 1MHz : eon g Vas = OV = 7 Lr 3 3 Q w= 2 Ww 2 Zo = tg 104 - E 7 o 102 Og 5 z ao = 7 eo 3 3 Og ? e Oo 408 s 3 Ton = 25C i 2 Vop = 30V 5 Crss Vas = 10 3 401 RGEN = Flas = 502 25 57100 23 5710!' 23 57102? 23 10 2 3 #56 710! 23 5 710 DRAIN-SOURCE VOLTAGE Vops (V) DRAIN CURRENT Ip (A) 2 - 824 MITSUBISHI ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE 10s (ON) (1C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (er) pss (tC) DRAIN-SOURCE BREAKDOWN VOLTAGE _V (rR) Dss (25C) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE ON-STATE RESISTANCE 105 (ON) (25C) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) 10 Te = 25C lb = 70A 8 Vos = 10V SOURCE CURRENT Is (A) 0 40 80 120 160 200 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) = a Vas = 10V Ip = 1/2ID Pulse Test Ny wo dso = Qo ee GATE-SOURCE THRESHOLD VOLTAGE VGs (th) (V) mp BU ~ 10-1 -50 0 50 100 = 150 CHANNEL TEMPERATURE Teh (C} BREAKDOWN VOLTAGE VS. 10-2 0.4 ~50 0 50 100 150 CHANNEL TEMPERATURE Teh (C) CHANNEL TEMPERATURE = (TYPICAL) e S 101 Vas =0V 7 lo= 1mA = 5 g& 3 wo 2 9 O= 400 < 7 ho. Goh = 2 z 1 < 10-4 G5 = 3 KE 2 =z wW oO Zz < o ke a MITSUBISHI Nch POWER MOSFET FS70VSJ-06 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 1 VGs = 0V Pulse Test 80 To = 125C 60 40 20 0 0.4 0.8 1.2 1.6 2.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 4.0 VDS = 10V lp=1mA 3.2 2.4 1.6 0.8 0 ~50 0 50 100 150 CHANNEL TEMPERATURE = Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS _ & 0,05 0.02 0.01 Pulse 40-423 5710223 5710223 5710-23 5710023 S710' 23 S7102 PULSE WIDTH | tw (s) MITSUBISHI 2 ELECTRIC