Document Number: 94470 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 20 A
20MT120UFAPbF
Vishay Semiconductors
FEATURES
• Ultrafast Non Punch Through (NPT) technology
•Positive V
CE(on) temperature coefficient
• 10 μs short circuit capability
•HEXFRED
® antiparallel diodes with ultrasoft reverse
recovery
• Low diode VF
• Square RBSOA
•Al
2O3 DBC substrate
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
PRODUCT SUMMARY
VCES 1200 V
IC at TC = 96 °C 20 A
VCE(on) (typical)
at IC = 20 A, 25 °C 3.29 V
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage VCES 1200 V
Continuous collector current ICTC = 96 °C 20
A
Pulsed collector current ICM 100
Clamped inductive load current ILM 100
Diode maximum forward current IFM 100
Gate to emitter voltage VGE ± 20
V
RMS isolation voltage VISOL Any terminal to case, t = 1 minute 2500
Maximum power dissipation (only IGBT) PD
TC = 25 °C 240
W
TC = 100 °C 96
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20MT120UFAPbF
Vishay Semiconductors "Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Note
(1) ICES includes also opposite leg overall leakage
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V(BR)CES VGE = 0 V, IC = 250 μA 1200 - - V
Temperature coefficient of breakdown voltage V(BR)CES/TJVGE = 0 V, IC = 3 mA (25 to 125 °C) - + 1.3 - V/°C
Collector to emitter saturation voltage VCE(on)
VGE = 15 V, IC = 20 A - 3.29 3.59
V
VGE = 15 V, IC = 40 A - 4.42 4.66
VGE = 15 V, IC = 20 A, TJ = 125 °C - 3.87 4.11
VGE = 15 V, IC = 40 A, TJ = 125 °C - 5.32 5.70
VGE = 15 V, IC = 20 A, TJ = 150 °C - 3.99 4.27
Gate threshold voltage VGE(th) VCE = VGE, IC = 250 μA 4 - 6
Temperature coefficient of threshold voltage VGE(th)/TJVCE = VGE, IC = 3 mA (25 to 125 °C) - - 14 - mV/°C
Transconductance gfe VCE = 50 V, IC = 20 A, PW = 80 μs - 17.5 - S
Zero gate voltage collector current ICES (1)
VGE = 0 V, VCE = 1200 V, TJ = 25 °C - - 250 μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.7 3.0
mA
VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 2.9 9.0
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) QgIC = 20 A
VCC = 600 V
VGE = 15 V
- 176 264
nCGate to emitter charge (turn-on) Qge -1930
Gate to collector charge (turn-on) Qgc - 89 134
Turn-on switching loss Eon VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 25 °C,
energy losses include tail and
diode reverse recovery
- 0.513 0.770
mJ
Turn-off switching loss Eoff - 0.402 0.603
Total switching loss Etot - 0.915 1.373
Turn-on switching loss Eon VCC = 600 V, IC = 20 A, VGE = 15 V,
Rg = 5 , L = 200 μH, TJ = 125 °C,
energy losses include tail and
diode reverse recovery
- 0.930 1.395
Turn-off switching loss Eoff - 0.610 0.915
Total switching loss Etot - 1.540 2.310
Input capacitance Cies VGE = 0 V
VCC = 30 V
f = 1.0 MHz
- 2530 3790
pFOutput capacitance Coes - 344 516
Reverse transfer capacitance Cres - 78 117
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = 120 A
VCC = 1000 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
Fullsquare
Short circuit safe operating area SCSOA
TJ = 150 °C
VCC = 900 V, Vp = 1200 V
Rg = 5 , VGE = + 15 V to 0 V
10 - - μs
Document Number: 94470 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A Vishay Semiconductors
DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage drop VFM
IC = 20 A - 2.48 2.94
V
IC = 40 A - 3.28 3.90
IC = 20 A, TJ = 125 °C - 2.44 2.84
IC = 40 A, TJ = 125 °C - 3.45 4.14
IC = 20 A, TJ = 150 °C - 2.21 2.93
Reverse recovery energy of the diode Erec VGE = 15 V, Rg = 5 , L = 200 μH
VCC = 600 V, IC = 20 A
TJ = 125 °C
- 420 630 μJ
Diode reverse recovery time trr - 98 150 ns
Peak reverse recovery current Irr -3350A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range TJ- 40 - 150
°C
Storage temperature range TStg - 40 - 125
Junction to case
IGBT
RthJC
- 0.53 0.64
°C/WDiode - 0.69 0.83
Case to sink per module RthCS Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Clearance External shortest distance in air between 2 terminals 5.5 - -
mm
Creepage Shortest distance along external surface of the
insulating material between 2 terminals 8--
Mounting torque
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3 ± 10 % Nm
Weight 66 g
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20MT120UFAPbF
Vishay Semiconductors "Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
Fig. 2 - Power Dissipation vs. Case Temperature
Fig. 3 - Forward SOA
TC = 25 °C; TJ 150 °C
Fig. 4 - Reverse Bias SOA
TJ = 150 °C; VGE = 15 V
Fig. 5 - Typical IGBT Output Characteristics
TJ = - 40 °C; tp = 80 μs
Fig. 6 - Typical IGBT Output Characteristics
TJ = 25 °C; tp = 80 μs
IC (A)
TC (°C)
40
60
80
100
120
140
160
0 5 10 15 20 25
DC
0 20406080100120140160
TC(°C)
0
50
100
150
200
250
Ptot(W)
1 10 100 1000 10000
VCE (V)
0.01
0.1
1
10
100
1000
IC(A)
10 µs
100 µs
1ms
DC
10 100 1000 10000
VCE (V)
1
10
100
1000
IC(A)
0246810
VCE (V)
0
20
40
60
80
100
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0246810
VCE (V)
0
20
40
60
80
100
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
Document Number: 94470 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A Vishay Semiconductors
Fig. 7 - Typical IGBT Output Characteristics
TJ = 125 °C; tp = 80 μs
Fig. 8 - Typical Diode Forward Characteristics
tp = 80 μs
Fig. 9 - Typical VCE vs. VGE
TJ = - 40 °C
Fig. 10 - Typical VCE vs. VGE
TJ = 25 °C
Fig. 11 - Typical VCE vs. VGE
TJ = 125 °C
Fig. 12 - Typical Transfer Characteristics
VCE = 50 V; tp = 10 μs
0246810
VCE (V )
0
20
40
60
80
100
ICE(A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0 5.0
VF(V)
0
20
40
60
80
100
120
IF(A)
-40°C
25°C
125°C
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE(V)
ICE = 40A
ICE = 20A
ICE = 10A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE(V)
ICE = 10A
ICE = 20A
ICE = 40A
5101520
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VCE(V)
ICE = 10A
ICE = 20A
ICE = 40A
0 5 10 15 20
VGE (V)
0
50
100
150
200
250
300
ICE(A)
TJ = 25°C
TJ= 150°C
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20MT120UFAPbF
Vishay Semiconductors "Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Fig. 13 - Typical Energy Loss vs. IC
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
Rg = 5 ; VGE = 15 V
Fig. 14 - Typical Switching Time vs. IC
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
Rg = 100 ; VGE = 15 V
Fig. 15 - Typical Energy Loss vs. Rg
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
ICE = 5.0A; VGE = 15 V
Fig. 16 - Typical Switching Time vs. Rg
TJ = 150 °C; L = 1.4 mH; VCE = 400 V
ICE = 5.0A; VGE = 15 V
Fig. 17 - Typical Diode Irr vs. IF
TJ = 150 °C
Fig. 18 - Typical Diode Irr vs. Rg
TJ = 150 °C; IF = 5.0 A
0 1020304050
IC(A)
0
400
800
1200
1600
2000
2400
Energy(µJ)
EOFF
EON
010 20 30 40 50 60
RG (Ω)
0
400
800
1200
1600
2000
Energy(µJ)
EON
EOFF
010 20 30 40 50 60
RG (Ω)
10
100
1000
SwichingTime(ns)
tR
tdOFF
tF
tdON
0 5 10 15 20 25 30 35
IF(A)
0
10
20
30
40
IRR(A)
RG = 5.0Ω
RG =10 Ω
RG =30 Ω
RG =50 Ω
010 20 30 40 50 60
RG(Ω)
0
10
20
30
40
IRR(A)
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20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A Vishay Semiconductors
Fig. 19 - Typical Diode Irr vs. dIF/dt
VCC = 400 V; VGE = 15 V; ICE = 5.0 A; TJ = 150 °C
Fig. 20 - Typical Diode Qrr
VCC = 400 V; VGE = 15 V; TJ = 150 °C
Fig. 21 - Typical Capacitance vs. VCE
VGE = 0 V; f = 1 MHz
Fig. 22 - Typical Gate Charge vs. VGE
ICE = 5.0 A; L = 600 μH
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
0200 400 600 800 1000
diF/dt (A/µs)
10
15
20
25
30
35
40
IRR(A)
0 200 400 600 800 1000 1200
diF /dt (A/µs)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
QRR(µC)
5.0Ω
30Ω
10 Ω
50Ω
30A
20A
10A
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance(pF)
Cies
Coes
Cres
0 40 80 120 160 200
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE(V)
600V
t1, Rectangular Pulse Duration (sec)
Thermal Response (ZthJC)
0.0001
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Single Pulse
(Thermal Response)
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D =0.01
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20MT120UFAPbF
Vishay Semiconductors "Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A
Fig. 24 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
Fig. CT.1 - Gate Charge Circuit (Turn-Off)
Fig. CT.2 - RBSOA Circuit
Fig. CT.3 - S.C. SOA Circuit
Fig. CT.4 - Switching Loss Circuit
t1, Rectangular Pulse Duration (sec)
Thermal Response (ZthJC)
0.0001
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Single Pulse
(Thermal Response)
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D =0.01
1 K
VCC
D.U.T.
0
L
+
-
L
Rg
80 V D.U.T
1000 V
+
-
D
C
Driver
D.U.T.
900 V
+
-
L
Rg
VCC
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
-+
+
-
Document Number: 94470 For technical questions within your region, please contact one of the following: www.vishay.com
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20MT120UFAPbF
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 20 A Vishay Semiconductors
Fig. 25 - Electrical diagram
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
9, 10
4
3
5
6
15, 16
7
8
11, 12
13, 14
2
1
Device code
51324
1
2
3
4
5
6- A = Al
2
O
3
DBC substrate
7- Lead (Pb)-free
67
- Current rating (20 = 20 A)
- Essential part number
- Voltage code (120 = 1200 V)
- Speed/type (U = Ultrafast IGBT)
- Circuit configuration (F = Full bridge)
20 MT 120 U F A PbF
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95245
Document Number: 95245 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 24-Sep-08 1
MTP MOSFET/IGBT Full-Bridge
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters
Ø 5 Ø 1.1
12 ± 0.5
4
20.5
2.5 31.8
33
41
32
13
14 11
12
9
10
5
6
15
16
7
8
R5.75 (x 2)
27.5
11.4 ± 0.1 11.3 ± 0.1
Ø 5.2 x 3
3 ± 0.1
8 ± 0.1
0.3 ± 0.1
76.6 ± 0.1
7.4 ± 0.1
3 ± 0.1
5.3 ± 0.1
5.3 ± 0.1
45°
0.6 x h1.2
63.5 ± 0.25
48.7
44.5
39.5
6.6 ± 0.1
7.4 ± 0.1
4.9 ± 0.1
8 ± 0.1
1.3
7 ± 0.1
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Revision: 02-Oct-12 1Document Number: 91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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