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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
September 2016
© 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSA660 • Rev. 1.0
FSA660 — 2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch
FSA660—2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane
Switch
Features
Switch Type: SPDT(3x)
Signal Types:
- MIPI, C-PHY
VCC: 1.5 to 5.0 V
Input Signals: 0 to 2.1 V
RON: 5.4 Ω Typical
ΔRON: 0.1 Ω Typical
RON_FLAT: 0.9 Ω Typical
ICCZ:1 µA Maximum
ICC: 12 µA Typical
OIRR : -28 dB Typical
Bandwidth: 5G Hz Typical
IL: -1.0 dB Typical
Xtalk: -44 dB Typical
CON: 0.8 pF Typical
Description
The FSA660 is a one-data-lane MIPI, C-PHY switch.
This Single-Pole, Double-Throw (SPDT) switch is
optimized for switching between two high-speed or low-
power MIPI sources. The FSA660 is designed for the
MIPI specification and allows connection to a CSI or DSI
module.
Applications
Smart phones
Tablets
Laptops
Displays
Processor
C-PHY
Lane
Module
MANAGE
MENT
MIPI Module#1
MIPI Module#2
/OE
SEL
VCC
GND
FSA660
A1
B1
C1
C-PHY
Lane
Module
MANAGE
MENT A2
B2
C2
C-PHY
Lane
Module
MANAGE
MENT
A
B
C
Figure 1. Typical Application
Ordering Information
Part Number
Operating
Temperature Range
Package
Top Mark
FSA660TMX
-40 to +85°C
18-Lead, Quad, Ultra-ultrathin Molded Leadless
Package (TMLP), 2.0 mm x 2.8 mm x 0.375 mm
LS
© 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSA660 • Rev. 1.0
2
FSA660 — 2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch
Pin Descriptions
A
B
C
A1
A2
B1
B2
C1
C2 SEL
/OE
1
2
3
4
5
67 8 9
10
11
12
13
14
15161718
GND
A
B
GND
NC
C
B2
A2
GND
NC
C1
SEL /OE C2
NC
GND VCC B1
A1
Figure 2. Analog Symbol
Figure 3. Pin Assignment(Top Through View)
Truth Table
SEL
/OE
Function
HIGH
LOW
A=A2,B=B2,C=C2
LOW
LOW
A=A1,B=B1,C=C1
X
HIGH
A,B,C Data Ports High Impedance
Pin Definitions
Pin Name
Description
A1
1-Side Data Path A
B1
1-Side Data Path B
C1
1-Side Data Path C
A2
2-Side Data Path A
B2
2-Side Data Path B
C2
2-Side Data Path C
A
Common Data Path A
B
Common Data Path B
C
Common Data Path C
/OE
Output Enable
SEL
Control Pin
SEL=0
A=A1,B=B1,C=C1
SEL=1
A=A2,B=B2,C=C2
VCC
Power
GND
Ground
NC
No Connect
© 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSA660 • Rev. 1.0
3
FSA660 — 2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VCC
Supply Voltage
-0.5
6.0
V
VCNTRL
DC Input Voltage (SEL, /OE)(1)
-0.5
VCC
V
VSW
DC Switch I/O Voltage(1,2)
-0.3
2.1
V
IIK
DC Input Diode Current
-50
mA
Isw
DC Switch Current
25
mA
TSTG
Storage Temperature
-65
+150
°C
MSL
Moisture Sensitivity Level (JEDEC J-STD-020A)
1
ESD
Human Body Model, JEDEC: JESD22-A114
All Pins
2
kV
IEC 61000-2-4, Level 4, for Switch Pins
Contact
8
Air
15
Charged Device Model, JESD22-C101
1
Notes:
1. The input and output negative ratings may be exceeded if the input and output diode current ratings are observed.
2. VSW refers to analog data switch paths.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameter
Min.
Max.
Unit
VCC
Supply Voltage
1.5
5.0
V
VCNTRL
Control Input Voltage (SEL, /OE)(3)
0
5.0
V
VSW
Switch I/O Voltage
HS Mode
0
0.54
V
LP Mode
0
1.3
TA
Operating Temperature
-40
+85
°C
Note:
3. The control inputs must be held HIGH or LOW; they must not float.
© 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSA660 • Rev. 1.0
4
FSA660 — 2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch
DC and Transient Characteristics
All typical values are at TA=25°C unless otherwise specified.
Symbol
Parameter
Condition
VCC (V)
TA= -40ºC to +85ºC
Unit
Min.
Typ.
Max.
VIK
Clamp Diode Voltage SEL,
/OE
IIN=-18 mA
1.5
-1.2
-0.6
V
IIK
Clamp Diode Current
(Switch Pins)
VIN=-0.3 V
0
18
µA
VIH
Control Input Voltage High
SEL, /OE
1.5
1.3
V
SEL, /OE
3.6
1.4
V
SEL, /OE
5.0
1.5
V
VIL
Control Input Voltage Low
SEL, /OE
1.5
0.4
V
SEL, /OE
3.6
0.4
V
SEL, /OE
5.0
0.4
V
IIN
Control Input Leakage
VSW= 0 to 2.0 V
VCNTRL=0 to VCC
5.0
-500
500
nA
IOZ
Off-State Leakage for Open
Data Paths
VSW= 0.0 DATA 2.0 V
5.0
-500
500
nA
ICL
On-State Leakage for Closed
Data Paths(4)
VSW= 0.0 DATA 2.0 V
5.0
-500
500
nA
IOFF
Power-Off Leakage Current
(All I/O Ports)
VSW= 0.0 V to 2.0 V
0
-500
500
nA
RON
Switch On Resistance
VSW= 0 V, ION=-8 mA
1.5
5.4
8.0
∆RON
Difference in RON Between
Positive-Negative
VSW= 0 V, ION=-8 mA,
1.5
0.1
RONF_FLAT
Flatness for RON
VSW= 0 DATA 2.0 V,
ION=-8 mA
1.5
0.9
ICC
Quiescent Supply Current
V/OE=0, VSEL=0 or VCC,
IOUT=0
5.0
12
30
µA
ICCZ
Quiescent Supply Current
(High Impedance)
VSEL=X, V/OE= VCC,
IOUT=0
5.0
1
µA
ICCT
Increase in Quiescent Supply
Current
VSEL=X, V/OE =1.5 V
5.0
5
15
µA
Note:
4. For this test, the data switch is closed with the respective switch pin floating.
© 2016 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSA660 • Rev. 1.0
5
FSA660 — 2:1 MIPI C-PHY (5.7 Gbps) 1-Data Lane Switch
AC Electrical Characteristics
All typical value are for VCC =3.6 V and TA=25°C unless otherwise specified.
Symbol
Parameter
Condition
VCC (V)
TA= -40ºC to +85ºC
Unit
Min.
Typ.
Max.
tON
Turn-On Time, SEL to Output
RL=50 Ω, CL=0 pF, VSW=0 V,
VSW=0.6 V
1.5 to
5.0 V
350
600
ns
tOFF
Turn-Off Time, SEL to Output
RL=50 Ω, CL=0 pF, VSW=0 V,
VSW=3.3 V
1.5 to
5.0 V
125
300
ns
tPD
Propagation Delay(5)
CL=, CL=0 pF, RL=50 Ω,
1.5 to
5.0 V
0.25
ns
tBBM
Break-Before-Make(5)
RL=50 Ω, CL=0 pF,
VSW1=0.6 V,VSW2= -0.6 V,
1.5 to
5.0 V
100
350
ns
tPEN
Enable Time,
/OE to Output
RL=50 Ω, CL=0 pF, VSW=0.6 V
1.5 to
5.0 V
60
150
µs
tPDISEN
Disable Time,
/OE to Output
RL=50 Ω, CL=0 pF, VSW=0.6 V
1.5 to
5.0 V
35
240
ns
OIRR
Off Isolation(5)
VS=0 dBm, R=50 Ω,
f=2.5 GHz
3.6 V
-28
dB
Xtalk
Channel Crosstalk(5)
VS=0 dBm, R=50 Ω,
f=2.5 GHz
3.6 V
-44
dB
IL
Insertion Loss(5)
VS=0 dBm, f=2.5 GHz,
RL=50 Ω, CL=0 pF
3.6V
-1.0
dB
BW
-3 db Bandwidth(5)
VIN=1 Vpk-pk, RL=50 Ω,
CL=0 pF (All Data Paths)
3.6 V
5
GHz
tSK(P)
Skew of Transitions of the
Output(5)
RPU=50 to VCC, f=2.5 GHz,
CL=0 pF
3.6 V
6
ps
CIN
Control Pin Input Capacitance(5)
VCC=0 V, f=1 MHz
2.7
pF
CON
On Capacitance(5)
VCC=3.3 V, f=2.5 GHz
0.8
pF
COFF
Off Capacitance(5)
VCC=3.3 V, f=2.5 GHz
0.6
pF
Note:
5. Guaranteed by characterization and design. Not production tested.
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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