1
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
25
26
27
28
29
30
31
32
33
34
35
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9
Frequency (GHz)
Output Power (dBm)
-20
-15
-10
-5
0
5
10
15
20
25
30
3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
S-Parameter (dB)
Key Features
•3.3-3.8 GHz Bandwidth
•41 dBc IMR3 @ 21 dBm Pout/tone
•24 dB Nominal Gain
•30 dBm Nominal P1dB
•2.5% EVM at 22 dBm output power
•13 dB step attenuator function
•Power sample port
•-1.5V Vg voltage to shut down drain current
•Self bias: +6 V 770mA
•Package Dimensions:
5.0 x 5.0 x 0.9 mm QFN
Primary Applications
•Fixed Broadband Wireless
•WiMAX
Preliminary Measured Data
Bias Conditions: Vd = +6 V Self Bias
P2dB
P1dB
S21
S11
S22
General Description
TGA2703-SM is a linear amplifier
operating for 802.16 broadband
wireless applications in 3.3 to 3.8 GHz
frequency band. The PA delivers 24 dB
of small-signal gain, 30dBm P1dB and
40 dBc IMR3 at 21 dBm output power
per tone from a single +6V power
supply. It has 2.5% EVM at 22 dBm
output power. The TGA2703
incorporates a 13 dB step attenuator
function and a power sampling port.
The 50 ohm device requires minimum
external components for operation, and
is packaged in a low-cost, surface
mount 5x5 QFN style package.
Lead-Free & RoHS compliant.
Demo boards are available.
3.5GHz WiMAX Driver / Power Amplifier
Datasheet subject to change without notice
2
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
TABLE I
MAXIMUM RATINGS 1/
SYMBOL PARAMETER VALUE NOTES
Vd
Drain Voltage 7 V 2/
Vctrl
Gain Control Voltage 7 V
Id
Drain Current 1.1 A 2/ 3/
⏐Ig⏐ Gate Current 6 mA 3/
P
IN
Input Continuous Wave Power 25 dBm
P
D
Power Dissipation 7.7 W 2/ 4/
T
CH
Operating Channel Temperature 200 °C 5/
Mounting Temperature (30 Seconds) 260 °C
T
STG
Storage Temperature -65 to 150 °C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/ Total current for the device.
4/ When operated at this bias condition with a base plate temperature of 85 °C, the median life is
6.2E4.
5/ Junction operating temperature will directly affect the device median time to failure (Tm). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
3
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C Nominal)
Notes
Re sponse Uni ts Typi ca l
Frequency Band GHz 3.3-3.8GHz
Drain Operating Voltage V 6
Small Signal Gain dB 24
Input Return Loss dB 10
Output Return Loss dB 12
Control Gain Step dB 13
Psat dBm 31.5 Pin at 11 dBm
P1dB dBm 30
EVM % TBD at 3.5 GHz, 23 dBm Pout
Gain variation over temperature dB/
o
C0.03
IMD3 dBc 41 at 21 dBm Pout/tone
TOI dBm 42 at 21 dBm Pout/tone
4
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
TABLE III
THERMAL INFORMATION
Parameter Test Conditions T
CH
(°C)
θ
JC
(°C/W)
Tm
(HRS)
θ
JC
Thermal
Resistance
(channel to backside
of package)
Vd = 6V
I
D
= 0.77 A
Pdiss = 4.62 W
145.5
13.1
3.8E+6
Note: Package backside soldered to carrier at 85 °C baseplate temperature.
Median Lifetime (Tm) vs. Channel Temperature
5
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
25
26
27
28
29
30
31
32
33
34
35
3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9
Frequency (GHz)
Output Power (dBm)
-30
-20
-10
0
10
20
30
2 2.5 3 3.5 4 4.5 5
Fre
q
uenc
y
(
GHz
)
S Parameter (dB)
Measured Data
Bias Conditions: Vd = 6 V, Id =770 mA Self Bias
S21
S11
S22
P2dB
P1dB
6
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
Measured Data
Bias Conditions: Vd = 6 V, Id =770 mA Self Bias
7
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
Measured Data
Bias Conditions: Vd = 6 V, Id =770 mA Self Bias
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-15 -10 -5 0 5 10 15
Pin (dBm)
Id (A)
3.2GHz
3.3GHZ
3.4GHz
3.5GHz
3.6GHz
3.7GHz
3.8GHz
0
4
8
12
16
20
24
28
-15 -10 -5 0 5 10 15
Pin (dBm)
PAE (%)
3.2GHz
3.3GHz
3.4GHz
3.5GHz
3.6GHz
3.7GHz
3.8GHz
8
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
Measured Data
Bias Conditions: Vd = 6 V, Id =770 mA Self Bias
9
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
Package Layout
Top View
Bottom View
10
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
Package Pinout Diagram
Top Side
Dot indicates Pin 1
Bottom Side
Pin Description Pin Description
1,2,3 NC 14 Power Sample
4 RF Input 18 RF Output
5,6,7,8,9 NC 19,20,21 NC
10 Gain Control 22 Vd2
11,13 NC 23,24,25 NC
12 Gate Acess 26 Vd1
15,16,17 NC 27,28 NC
1
7
8
14
15
21
22 28
GND
11
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
Mechanical Drawing
(Bottom Side)
Units: mm [Inch]
Package tolerance: +/- 0.05
0.31 [0.012]
5.00 [0.197]
3.50 [0.138]
5.00 [0.197]
3.50 [0.138]
0.50 [0.02]
0.45 [0.02]
12
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
Recommended Board Layout Assembly
•The evaluation board material is 20 mil thick RO4003
•100 pF and 0.01 uF are required de-coupling capacitor
0.01uF
100pF
13
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
TGA2703 Bias Connection
Self-biased mode
Connect gain control and Vg to ground.
Apply +6V to Vd. Current will be ~770mA
4 inch or longer jumper
Or 10nH inductor
6V
6V
Connect gain control to ground. Apply negative voltage Vg.
Apply +6V to Vd. Current will be ~770mA
Vg
TGA2703 Bias Connection
Gate control mode
14
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
TGA2703 Bias Connection
Gain control mode
6V
6V
For 13 dB attenuation testing:
Connect gain control to +6V and Vg to ground.
Apply +6V to Vd. Current will be ~770mA
4 inch or longer jumper
or 10nH inductor
-30
-25
-20
-15
-10
-5
0
5
10
15
20
3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8
Frequency (GHz)
S-Parameter (dB)
15
TGA2703-SM
June 2012 © Rev A
TriQuint Semiconductor: www. triquint.com (503)615-9000 Fax (503)615-8902 info-networks@tqs.com
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages.
Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven
vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed
in the table below.
Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement.
The volume of solder paste depends on PCB and component layout and should be well controlled to
ensure consistent mechanical and electrical performance.
Clean the assembly with alcohol.
Typical Solder Reflow Profiles
Reflow Profile SnPb Pb Free
Ramp-up Rate 3 °C/sec 3 °C/sec
Activation Time and
Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C
Time above Melting Point 60 – 150 sec 60 – 150 sec
Max Peak Temperature 240 °C 260 °C
Time within 5 °C of Peak
Temperature 10 – 20 sec 10 – 20 sec
Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec
Ordering Information
Part No. Description
TGA2703-SM 5mm x 5mm QFN
TGA2703-SM T/R 5mm x 5mm QFN, TAPE AND REEL