HAL114SO-C - N/A - Datasheet.Live

HAL114

Unipolar Hall Switch IC

Edition June 10, 1998

6251-456-1DS

MICRONAS

INTERMETALL

MICRONAS

HAL114

MICRONAS INTERMETALL2

Unipolar Hall Switch IC

in CMOS technology

Introduction

The HAL114 is a Hall switch produced in CMOS technol-

ogy. The sensor includes a temperature-compensated

Hall plate, a Schmitt trigger, and an open-drain output

transistor (see Fig. 2).

The HAL114 has a unipolar behavior: The output turns

low with a magnetic south pole on the branded side of

the package (see figures 3 and 4). The output turns high

if the magnetic field is removed. The output signal re-

mains high if the magnetic north pole approaches the

branded side of the package.

The sensor is designed for industrial and automotive ap-

plications and operates with supply voltages from 4.5 V

to 24 V in the ambient temperature range from –40°C up

to 150 °C.

The HAL114 is available in a SMD-package (SOT -89A)

and in a leaded version (TO-92UA).

Features:

– operates from 4.5 V to 24 V supply voltage

– overvoltage protection

– reverse-voltage protection at VDD-pin

– short-circuit protected open-drain output by thermal

shutdown

– operates with magnetic fields from DC to 20 kHz

– stable magnetic switching points over a wide supply

voltage range

– the decrease of magnetic flux density caused by rising

temperature in the sensor system is compensated by

a built-in negative temperature coefficient of the mag-

netic switching points

– ideal sensor for contactless switches and speed mea-

surement in hostile automotive and industrial environ-

ments

Specifications

– switching type: unipolar

– output turns low with magnetic south pole on branded

side of package

– output turns high if magnetic field is removed

Marking Code

Type Temperature Range

A E C

HAL114SO,

HAL114UA 114A 114E 114C

Operating Junction Temperature Range (TJ)

A: TJ = –40 °C to +170 °C

E: TJ = –40 °C to +100 °C

C: TJ = 0 °C to +100 °C

The relationship between ambient temperature (TA) and

junction temperature (TJ) is explained on page 8.

Hall Sensor Package Codes

Type: 114

HALXXXPA-T Temperature Range: A, E, or C

Package: SO for SOT-89A,

UA for TO-92UA

→ Type: 114

→ Package: TO-92UA

→ Temperature Range: TJ = –40 °C to +100 °C

Example: HAL114UA-E

Hall sensors are available in a wide variety of packaging

versions and quantities. For more detailed information,

please refer to the brochure: “Ordering Codes for Hall

Sensors”.

Solderability

– Package SOT-89A: according to IEC68-2-58

– Package TO-92UA: according to IEC68-2-20

OUT

GND

1VDD

Fig. 1: Pin configuration

HAL114

MICRONAS INTERMETALL 3

Functional Description

The HAL114 is a CMOS integrated circuit with a switch-

ing output in response to magnetic fields. It processes

the “Hall Voltage” internally: The Hall Voltage is propor-

tional to the magnetic flux component Bz orthogonal to

an integrated Hall Plate, in case an electric current is im-

posed to the plate. The HAL1 14 compares the Hall V olt-

age with a predefined threshold and generates the out-

put signal dependent of the direction of the magnetic

field. A special circuit compensates for the temperature

dependent effects of the IC, as well as the external mag-

net. A built-in hysteresis eliminates possible oscillations

of the output signal adjacent to its switching point so that

“output bouncing” is avoided. The output is short-circuit

protected by limiting high currents and by sensing ex-

cess temperature. Shunt protection devices clamp

voltage peaks at the Output-Pin and VDD-Pin together

with external series resistors. Reverse current is limited

at the VDD-Pin by an internal series resistor up to –15 V.

No external reverse protection diode is needed at the

VDD-Pin for values ranging from 0 V to –15 V.

Temperature

Dependent

Bias Hysteresis

Control

Comparator Output

VDD

OUT

Hall Plate

Fig. 2: HAL114 block diagram

HAL114

Short Circuit &

Overvoltage

Protection

Reverse

Voltage &

Overvoltage

Protection

Dimensions of Sensitive Area

0.4 mm x 0.2 mm

Positions of Sensitive Area

SOT-89A TO-92UA

x = 0 ± 0.2 x = 0 ± 0.2

y = 0.98 ± 0.2 y = 1.0 ± 0.2

x is referenced to the center of the package

Outline Dimensions

4.55±0.1

2.6±0.1

0.40.4

1.7

0.4

1.5

3.0

0.05±0.05

branded side

SPGS7001-6-A/2E

sensitive area

top view

123

Fig. 3:

Plastic Small Outline Transistor Package

(SOT-89A)

Weight approximately 0.04 g

Dimensions in mm

4±0.2

1.53±0.05

0.125

0.7

sensitive area

0.55

branded side

0.36

0.8

0.3

45°

14.0

min.

3.1

1.271.27

2.54

123

0.5

0.42

Fig. 4:

Plastic Transistor Single Outline Package

(TO-92UA)

Weight approximately 0.12 g

Dimensions in mm

1.5±0.05 4.06±0.1

2.03

3.05±0.1

0.48

SPGS7002-6-A/1E

HAL114

MICRONAS INTERMETALL4

Absolute Maximum Ratings

Symbol Parameter Pin No. Min. Max. Unit

VDD Supply Voltage 1 –15 281) V

–VPTest Voltage for Supply 1 –242) – V

–IDD Reverse Supply Current 1 – 501) mA

IDDZ Supply Current through

Protection Device 1 –2003) 2003) mA

VOOutput Voltage 3 –0.3 281) V

IOContinuous Output On Current 3 – 30 mA

IOmax Peak Output On Current 3 – 2503) mA

IOZ Output Current through

Protection Device 3 –2003) 2003) mA

TSStorage Temperature Range –65 150 °C

TJJunction Temperature Range –40

–40 150

1704) °C

1) as long as TJmax is not exceeded

2) with a 220 Ω series resistance at pin 1 corresponding to test circuit 1

3) t<2 ms

4) t<1000h

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only . Functional operation of the device at these or any other conditions beyond those indicated in the

“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-

mum ratings conditions for extended periods may affect device reliability.

Recommended Operating Conditions

Symbol Parameter Pin No. Min. Typ. Max. Unit

VDD Supply Voltage 1 4.5 – 24 V

IOContinuous Output On Current 3 0 – 20 mA

RVSeries Resistor 1 – – 270 Ω

Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V , as not otherwise specified in Test Conditions

Typical Characteristics for TJ = 25 °C and VDD = 12 V

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

VOL Output Voltage over

Temperature Range 3 – 120 400 mV IOL = 12.5 mA

VOL Output Voltage over

Temperature Range 3 – 190 500 mV IOL = 20 mA

IOH Output Leakage Current 3 – – 1 µAB < Boff,

VOH = 24 V, TJ = 25 °C

HAL114

MICRONAS INTERMETALL 5

Electrical Characteristics, continued

Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions

IOH Output Leakage Current over

Temperature Range 3 – – 10 µAB < Boff

VOH = 24 V, TJ < 150 °C

IDD Supply Current 1 6 8.2 11 mA TJ = 25 °C

IDD Supply Current over

Temperature Range 1 3.9 8.2 12 mA

ten(O) Enable Time of Output

after Setting of VDD 3 – 6 10 µs VDD = 12 V

trOutput Rise T ime 3 – 85 400 ns VDD = 12 V, RL = 820 Ohm,

CL = 20 pF

tfOutput Fall T ime 3 – 60 400 ns VDD = 12 V, RL = 820 Ohm,

CL = 20 pF

RthJSB

case

SOT-89A

Thermal Resistance Junction to

Substrate Backside – 150 200 K/W Fiberglass Substrate

pad size see Fig. 6

RthJA

case

TO-92UA

Thermal Resistance

Junction to Soldering Point – 150 200 K/W Leads at ambient tempera-

ture at a distance of 2 mm

from case

Magnetic Characteristics at TJ = –40 °C to +170 °C, VDD = 4.5 V to 24 V,

Typical Characteristics for VDD = 12 V

Magnetic flux density values of switching points.

Positive flux density values refer to the magnetic south pole at the branded side of the package.

Parameter –40 °C 25 °C 100 °C 170 °C Unit

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

On point BON 7.5 21.5 36.0 7.0 21.3 34.0 6.3 19.6 31.5 6.0 19.2 31.0 mT

Off point BOFF 4.3 17.4 33.2 4.0 17.6 31.2 3.6 16.1 28.9 3.6 15.8 28.8 mT

Hysteresis BHYS 2.8 4.1 5.0 2.8 3.7 4.5 2.6 3.5 4.0 2.2 3.4 4.0 mT

BOFF min BON max

BHYS

Output Voltage

Fig. 5: Definition of switching points and hysteresis

BOFF BON

Fig. 6: Recommended pad size SOT-89A

Dimensions in mm

5.0

2.0

1.0

HAL114

MICRONAS INTERMETALL6

–50 0 50 100 150 200

BOFF

BON

BOFF

BON

VDD = 12 V

°C

Fig. 7: Typical magnetic switching points

versus temperature

0 5 10 15 20 25 30

VDD

BON

BOFF

Fig. 8: Typical magnetic switching points

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 150 °C

345678

VDD

BON

BOFF

Fig. 9: Typical magnetic switching points

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 150 °C

–15

–10

–5

–15 –10 –5 0 5 10 15 20 25 30 V

VDD

IDD

Fig. 10: Typical supply current

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 150 °C

HAL114

MICRONAS INTERMETALL 7

02468

VDD

IDD

Fig. 11: Typical supply current

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 150 °C

–50 0 50 100 150 200 °C

IDD

VDD = 24 V

VDD = 4.5 V

Fig. 12: Typical supply current

versus temperature

100

200

300

400

500

0 5 10 15 20 25 30 V

VDD

VOL

IO = 12.5 mA

Fig. 13: Typical output low voltage

versus supply voltage

TA = –40 °C

TA = 25 °C

TA = 150 °C

100

200

300

400

500

–50 0 50 100 150 200

VOL

IO = 12.5 mA

IO = 20 mA

°C

VDD = 12 V

Fig. 14: Typical output low voltage

versus temperature

HAL114

MICRONAS INTERMETALL8

–50 0 50 100 150 200

µA

IOH

°C

100

10–1

10–2

10–3

10–4

101

102

VOH = 24 V

VDD = 5 V

Fig. 15: Typical output leakage current

versus temperature

Application Note

For electromagnetic immunity , it is recommended to ap-

ply a 330 pF minimum capacitor between VDD (pin 1)

and Ground (pin 2).

For applications requiring robustness to conducted dis-

turbances (transients), a 220 Ω series resistor to pin 1

and a 4.7 nF capacitor between VDD (pin1) and Ground

(pin 2) is recommended. The series resistor and the ca-

pacitor should be placed as close as possible to the IC.

OUT

GND

4.7 nF

VDD

220 Ω

Fig. 16: Recommended application circuit

Ambient Temperature

Due to the internal power dissipation, the temperature

on the silicon chip (junction temperature TJ) is higher

than the temperature outside the package (ambient tem-

perature TA).

TJ = TA + ∆T

At static conditions, the following equations are valid:

– for SOT-89A: ∆T = IDD * VDD * RthJSB

– for TO-92UA: ∆T = IDD * VDD * RthJA

For typical values, use the typical parameters. For worst

case calculation, use the max. parameters for IDD and

Rth, and the max. value for VDD from the application.

Data Sheet History

1. Final data sheet: “HAL114 Unipolar Hall Switch IC”,

June 10, 1998, 6251-456-1DS. First release of the final

data sheet.

MICRONAS INTERMETALL GmbH

Hans-Bunte-Strasse 19

D-79108 Freiburg (Germany)

P.O. Box 840

D-79008 Freiburg (Germany)

Tel. +49-761-517-0

Fax +49-761-517-2174

E-mail: docservice@intermetall.de

Internet: http://www.intermetall.de

Printed in Germany

by Systemdruck+Verlags-GmbH, Freiburg (06/98)

Order No. 6251-456-1DS

All information and data contained in this data sheet are with-

out any commitment, are not to be considered as an offer for

conclusion of a contract nor shall they be construed as to

create any liability . Any new issue of this data sheet invalidates

previous issues. Product availability and delivery dates are ex-

clusively subject to our respective order confirmation form; the

same applies to orders based on development samples deliv-

ered. By this publication, MICRONAS INTERMETALL GmbH

does not assume responsibility for patent infringements or

other rights of third parties which may result from its use.

Reprinting is generally permitted, indicating the source. How-

ever, our prior consent must be obtained in all cases.

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