TS13009
High Voltage NPN Transistor
1/5 Version: A07
TO-220
PRODUCT SUMMARY
BVCEO
400V
BVCBO
700V
IC
12A
VCE(SAT)
1.5V @ IC / IB = 12A / 3A
Features
● High Voltage
● High Speed Switching
Structure
● Silicon Triple Diffused Type
● NPN Silicon Transistor
Ordering Information
Package
Packing
TO-220
50pcs / Tube
Block Diagram
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
700V
V
Collector-Emitter Voltage
VCEO
400V
V
Emitter-Base Voltage
VEBO
9
V
DC
12
Collector Current
Pulse
IC
24
A
DC
6
Base Current
Pulse
IB
12
A
Total Power Dissipation
PD
100
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
oC
Note: Single Pulse. PW = 300uS, Duty ≤2%
Pin Definition:
1. Base
2. Collector
3. Emitter
TS13009
High Voltage NPN Transistor
2/5 Version: A07
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
IC =10mA, IE =0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA, IC =0
BVEBO
9
--
--
V
Collector Cutoff Current
VCE =400V, IB=0
ICEO
--
--
1
mA
Collector Cutoff Current
VCB =700V, IE =0
ICBO
--
--
1
mA
Emitter Cutoff Current
VEB = 9V, IC =0
IEBO
--
--
1
mA
Collector-Emitter Saturation Voltage
IC=5A, IB =1A
IC=8A, IB =1.6A
IC=12A, IB =3A
VCE(SAT)1
VCE(SAT)2
VCE(SAT)3
--
--
--
--
--
--
1
1.5
3
V
Base-Emitter Saturation Voltage
IC=5A, IB =1A
IC=8A, IB =1.6A
VBE(SAT)1
VBE(SAT)2
--
--
--
--
1.2
1.6
V
DC Current Gain
VCE =5V, IC = 5A
VCE =5V, IC = 8A
hFE
8
6
--
--
40
30
Dynamic
Frequency
VCE =10V, IC =0.5A
fT
4
--
--
MHz
Output Capacitance
VCB =10V, f =0.1MHz
Cob
--
180
--
pF
Resistive Load Switching Time (Ratings)
Delay Time
td
--
0.06
0.1
uS
Rise Time
tr
0.45
1
uS
Storage Time
tSTG
--
2.8
3.3
uS
Fall Time
VCC =125V, IC =8A,
IB1 =IB2=1.6A, tP =25uS
Duty Cycle ≤1%
tf
--
0.3
0.5
uS
Note: pulse test: pulse width ≤300uS, duty cycle ≤2%
TS13009
High Voltage NPN Transistor
3/5 Version: A07
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. VBE(SAT
Figure 4. Power Derating
TS13009
High Voltage NPN Transistor
4/5 Version: A07
TO-220 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L
= Lot Code
TO-220 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX
A
10.000
10.500
0.394
0.413
B
3.740
3.910
0.147
0.154
C
2.440
2.940
0.096
0.116
D
-
6.350
-
0.250
E
0.381
1.106
0.015
0.040
F
2.345
2.715
0.092
0.058
G
4.690
5.430
0.092
0.107
H
12.700
14.732
0.500
0.581
J
14.224
16.510
0.560
0.650
K
3.556
4.826
0.140
0.190
L
0.508
1.397
0.020
0.055
M
27.700
29.620
1.060
1.230
N
2.032
2.921
0.080
0.115
O
0.255
0.610
0.010
0.024
P
5.842
6.858
0.230
0.270
TS13009
High Voltage NPN Transistor
5/5 Version: A07
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