Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
UMR11N
Applications Dimensions(Unit : mm) Land size figure(Unit : mm)
High frequency switching
Features
1)Small mold type.(UMD6)
2)High reliability
Construction
Silicon epitaxial planer Structure
Taping specifications(Unit : mm)
Absolute maximum ratings(Ta=25C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge A
Pd mW
Tj C
Tstg C
Electical characteristics(Ta=25C)
Symbol Min. Typ. Max. Unit Conditions
VF- - 1.2 V IF=100mA
IR- - 0.1 μAVR=70V
Ct - - 3.5 pF VR=6V , f=1MHz
trr --
4ns
Parameter Limits
Reverse voltage (repetitive peak) 80
Reverse voltage (DC) 80
Forward current (Single) 300
Average retcified forward current 100
Surge current (t=1us) 4
Power dissipation 200
Junction temperature 150
Reverse recoverytime VR=6V,IF=5mA,RL=50
Storage temperature 55 to 150
Parameter
Forward voltage
Reverse current
Capacitance between terminals
dot (year week factory)
2.0±0.2
2.1±0.1
1.25±0.1
0.25±
0.1
0.05
各リードとも
同寸法
(5)(6) (4)
1.3±0.1
0.65 0.65
(1) (3)(2)
0.15±0.05
0.9±0.1
0.7
0.1Min
0～0.1
Each lead has same dimension
ROHM : UMD6
JEITA : SC-88
JEDEC : SOT-363
UMD6
0.35
0.9
1.6
0.650.65
(1) (2) (3)
(4)(5)(6)
2.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1 .5±0 .1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ1.1±0.1
2.45±0.1
2.4±0.1
5.5±0.2
1.15±0.1
2.4±0.1
0.3±0.1
0～0.5
1/3 2011.06 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMR11N
0
1
2
3
4
5
6
7
8
9
10
AVE:1.98pF
V
R
=6V
f=1MHz
D3,D4
0
10
20
30
40
50
60
70
80
90
100
900
910
920
930
940
950
0.001
0.01
0.1
1
10
100
1000
10000
0 1020304050607080
Ta=125C
Ta=-25C
Ta=25C
Ta=75C
Ta=150C
D3,D4
0.01
0.1
1
10
100
1000
10000
0 1020304050607080
Ta=125C
Ta=75C
Ta=150C
D1,D2
Ta=25C
Ta=-25C
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 100
0
Ta=-25C
Ta=125C
Ta=75C
Ta=25C
Ta=150C
D3,D4
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 100
0
Ta=-25C
Ta=125C
Ta=75C
Ta=25C
Ta=150C
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
90
100
D3,D4
850
860
870
880
890
900
D3,D4
0.1
1
10
0 5 10 15 20
D3,D4
0.1
1
10
0 5 10 15 20
FORWARD CURRENT:I
F
(mA)
REVERSE CURRENT:I
R
(nA)
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(nA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
REVERSE CURRENT:I
R
(nA)
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
V
F
DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(nA)
I
R
DISPERSION MAP
f=1MHz f=1MHz
AVE:921.7mV
Ta=25C
I
F
=100mA
n=30pcs
AVE:870.1mV
Ta=25C
I
F
=100mA
n=30pcs
Ta=25C
V
R
=70V
n=30pcs
AVE:9.655nA
Ta=25C
V
R
=70V
n=30pcs
AVE:4.310nA
AVE:1.17pF
Ta=25C
V
R
=6V
f=1MHz
n=10pcs
D1,D2
D1,D2
D1,D2 D1,D2
D1,D2
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT:I
F
(mA)
2/3 2011.06 - Rev.A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UMR11N
0
1
2
3
4
5
6
7
8
9
10
AVE:1.93ns
V
R
=6V
I
F
=5mA
RL=50
D1,D2
D3,D4
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
0
5
10
15
20
AVE:3.50A
8.3ms
Ifsm 1cyc
D1,D2
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
AVE:2.40ns
1ms
IM=1mA I
F
=10mA
300us
time
Mounted on epoxy board
I
FSM
DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
0
5
10
15
20
AVE:2.50A
8.3ms
Ifsm 1cyc
D3,D4
I
FSM
DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
3/3 2011.06 - Rev.A
R1120A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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