2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-535 (Z)
1st. Edition
Jul. 1997
Features
• Low on-resistance
RDS(on) = 0.042Ω typ.
• 4V gate drive devices.
• High speed switching
Outline
123
44
123
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S
2SK2926(L), 2SK2926(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID15 A
Drain peak current ID(pulse)*160 A
Body to drain diode reverse drain current IDR 15 A
Avalanche current IAP*315 A
Avalanche energy EAR*319 mJ
Channel dissipation Pch*225 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
3. Value at Ta = 25°C, Rg ≥ 50 Ω
2SK2926(L), 2SK2926(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 60——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20——V I
G
= ±100µA, VDS = 0
Zero gate voltege drain
current IDSS ——10µAV
DS = 60 V, VGS = 0
Gate to source leak current IGSS ——±10 µAV
GS = ±16V, VDS = 0
Gate to source cutoff voltage VGS(off) 1.5 — 2.5 V ID = 1mA, VDS = 10V
Static drain to source on state RDS(on) — 0.042 0.055 ΩID = 8A, VGS = 10V*1
resistance RDS(on) — 0.065 0.11 ΩID = 8A, VGS = 4V*1
Forward transfer admittance |yfs| 7 11 — S ID = 8A, VDS = 10V*1
Input capacitance Ciss — 500 — pF VDS = 10V
Output capacitance Coss — 260 — pF VGS = 0
Reverse transfer capacitance Crss — 110 — pF f = 1MHz
Turn-on delay time td(on) — 10 — ns VGS = 10V, ID = 8A
Rise time tr— 80 — ns RL = 3.75Ω
Turn-off delay time td(off) — 100 — ns
Fall time tf— 110 — ns
Body to drain diode forward
voltage VDF — 1.0 — V IF = 15A, VGS = 0
Body to drain diode reverse
recovery time trr — 55 — ns IF = 15A, VGS = 0
diF/ dt = 50A/µs
Note: 1. Pulse test
2SK2926(L), 2SK2926(S)
4
Main Characteristics
40
30
20
10
050 100 150 200
1000
300
100
30
3
10
0.1 0.3 1 310 30 100
20
16
12
8
4
0246810
20
16
12
8
4
012345
0.3
0.1
1
10 µs
1 ms
PW = 10 ms (1shot)
Ta = 25°C
100 µs
10 V
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
Operation in
this area is
limited by RDS(on)
DC Operation (Tc = 25°C)
6 V 5 V
3.5 V
4 V
3 V
V = 2.5 V
GS
Pulse Test
4 .5 V
Tc = 75°C25°C
–25°C
V = 10 V
Pulse Test
DS
2SK2926(L), 2SK2926(S)
5
2.0
1.6
1.2
0.8
0.4
048
12 16 20 5 20 100110502
0.20
0.16
0.12
0.08
0.04
–40 0 40 80 120 160
00.1 0.2 1 5 20
20
2
5
1
0.5
1.0
0.2
0.5
0.1
0.02
0.01
0.05
0.5 2
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )Ω
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R ( )
DS(on)
Static Drain to Source on State Resistance
Ω
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
D
Forward Transfer Admittance |y | (S)
fs
Forward Transfer Admittance vs.
Drain Current
Pulse Test
10 A
5 A
I = 20 A
DV = 4 V
GS
Pulse Test
10 V
I = 10 A
D
V = 4 V
GS
10 V
5 A
Pulse Test
5 A20 A 10 A
10
10
V = 10 V
Pulse Test
DS
25 °C
Tc = –25 °C
75 °C
2SK2926(L), 2SK2926(S)
6
0.1 0.5 1 2 100.2 5 01020304050
1000
200
500
100
10
20
50
100
80
60
40
20
0
20
16
12
8
4
8 16 24 32 400
0
1000
300
100
30
10
0.1 0.2 1 5 10
V = 10 V
25 V
50 V
DD
V = 50 V
25 V
10 V
DD
500
200
100
20
50
10
5
2000
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
I = 15A
D
VGS
VDS
3
10.5 2
Reverse Drain Current I (A)
DR
Reverse Recovery Time trr (ns)
Body to Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
Drain to Source Voltage V (V)
DS
Gate to Source Voltage V (V)
GS
Dynamic Input Characteristics
Drain Current I (A)
D
Switching Time t (ns)
Switching Characteristics
20
20
r
t
V = 10 V, V = 30 V
PW = 5 µs, duty < 1 %
GS DD
tf
d(on)
t
d(off)
t
di / dt = 50 A / µs
V = 0, Ta = 25 °C
GS
2SK2926(L), 2SK2926(S)
7
50
40
30
20
10
00.4 0.8 1.2 1.6 2.0
V = 0, –5 V
GS
10 V
5 V
200
160
120
80
40
25 50 75 100 125 150
0
Channel Temperature Tch (°C)
Repetive Avalanche Energy E (mJ)
AR
Maximum Avalanche Energy vs.
Channel Temperature Derating
D. U. T
Rg
I
Monitor
AP
V
Monitor
DS
VDD
50Ω
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
E = • L • I •
2
1V
V – V
AR AP DSS
DSS DD
2
Avalanche Test Circuit Avalanche Waveform
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
I = 40 A
V = 25 V
duty < 1 %
Rg > 50
AP
DD
Ω
2SK2926(L), 2SK2926(S)
8
Vin Monitor
D.U.T.
Vin
10 V
RL
V
= 30 V
DD
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50Ω
90%
10%
tf
Switching Time Test Circuit Switching Time Waveform
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 5 °C/W, Tc = 25 °C
θ γ θ
θ
D = 1
0.5
0.2
0.01
0.02
0.1
0.05
1 shot Pulse
Tc = 25°C
Pulse Width PW (S)
Normalized Transient Thermal Impedance
s (t)
γ
Normalized Transient Thermal Impedance vs. Pulse Width
2SK2926(L), 2SK2926(S)
9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (L)-(2)
—
—
0.42 g
6.5 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
0.55 ± 0.1
5.5 ± 0.5 1.7 ± 0.5
16.2 ± 0.5
4.7 ± 0.5
5.4 ± 0.5
1.15 ± 0.1
2.29 ± 0.5 2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
3.1 ± 0.5
(0.7)
As of January, 2001
Unit: mm
2SK2926(L), 2SK2926(S)
10
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(1),(2)
—
Conforms
0.28 g
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.7 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(4.9)
(5.3)
2SK2926(L), 2SK2926(S)
11
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
DPAK (S)-(3)
—
Conforms
0.28 g
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5 2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
0.55 ± 0.1
1.5 ± 0.5
5.5 ± 0.5
2.5 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
1.2 Max
(5.1)
(5.1)
(0.1)(0.1)
2SK2926(L), 2SK2926(S)
12
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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