The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.0 Revised August 3, 2012
SiT8209
High Frequency, Ultra Performance Oscillator
Note:
1. All electrical specifications in the above table are specified with 15 pF ±10% output load and for all Vdd(s) unless otherwise stated.
2. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdge™ option for EMI reduction.
Features Applications
Any frequency between 80.000001 and 220 MHz accurate to 6
decimal places
SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI
Express, video, Wireless
100% pin-to-pin drop-in replacement to quartz-based oscillators Computing, storage, networking, telecom, industrial control
Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as ±10 PPM
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
Standby or output enable modes
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm2
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra short lead time
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Condition
Output Frequency Range f 80.000001 – 220 MHz
Frequency Stability F_stab -10 – +10 PPM Inclusive of Initial tolerance at 25 °C, and variations over
operating temperature, rated power supply voltage and load
-20 – +20 PPM
-25 – +25 PPM
-50 – +50 PPM
Operating Temperature Range T_use -20 – +70 °C Extended Commercial
-40 – +85 °C Industrial
Supply Voltage Vdd 1.71 1.8 1.89 V Supply voltages between 2.5V and 3.3V can be supported.
Contact SiTime for guaranteed performance specs for supply
voltages not specified in this table.
2.25 2.5 2.75 V
2.52 2.8 3.08 V
2.97 3.3 3.63 V
Current Consumption Idd – 34 36 mA No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 30 33 mA No load condition, f = 100 MHz, Vdd = 1.8V
OE Disable Current I_OD – – 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
Down
– – 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
Standby Current I_std – – 70 μA Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled
Down
––10μA Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down
Duty Cycle DC 45 – 55 % f <= 165 MHz, all Vdds.
40 – 60 % f > 165 MHz, all Vdds.
Rise/Fall Time Tr, Tf – 1.2 2 ns 15 pF load, 10% - 90% Vdd
Output Voltage High VOH 90% – – Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)
IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)
Output Voltage Low VOL – – 10% Vdd
Input Voltage High VIH 70% – – Vdd Pin 1, OE or ST
Input Voltage Low VIL – – 30% Vdd Pin 1, OE or ST
Input Pull-up Impedance Z_in – 100 250 kΩPin 1, OE logic high or logic low, or ST logic high
2––MΩPin 1, ST logic low
Startup Time T_start – 7 10 ms Measured from the time Vdd reaches its rated minimum value
OE Enable/Disable Time T_oe – – 115 ns f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles
Resume Time T_resume – – 10 ms In standby mode, measured from the time ST pin crosses
50% threshold. Refer to Figure 5.
RMS Period Jitter T_jitt – 1.5 2 ps f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V
– 2 3 ps f = 156.25 MHz, Vdd = 1.8V
RMS Phase Jitter (random) T_phj – 0.5 1 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz
First year Aging F_aging -1.5 – +1.5 PPM 25°C
10-year Aging -5 – +5 PPM 25°C