APTC80A10SCT Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS Q1 VDSS = 800V RDSon = 100mW max @ Tj = 25C ID = 42A @ Tc = 25C Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * G1 - OUT S1 Q2 Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated * Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF * * Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration G2 0/VBUS S2 NTC1 * * OUT 0/VBUS OUT S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 800 42 32 172 30 100 416 24 0.5 670 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website - http://www.advancedpower.com 1-7 APTC80A10SCT - Rev 1 May, 2004 VBUS APTC80A10SCT All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 750A VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min 800 Typ Tj = 25C Tj = 125C VGS = 10V, ID = 21A VGS = VDS, ID = 3mA VGS = 20 V, VDS = 0V 2.1 3 Min Typ 6761 3137 161 273 Max Unit V 75 750 100 3.9 175 mW V nA Max Unit A Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy u Eon Turn-on Switching Energy Eoff Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 42A pF nC 36 138 Inductive switching @ 125C VGS = 15V VBus = 533V ID = 42A RG = 1.8W Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 42A, RG = 1.8 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 42A, RG = 1.8 10 13 83 ns 35 437 J 417 765 J 513 u In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 30A IF = 60A IF = 30A IF = 30A VR = 133V di/dt = 200A/s IF = 30A VR = 133V di/dt = 200A/s Min Tc = 85C Typ 30 Max Unit A 1.15 V 1.05 Tj = 125C 1 Tj = 25C 24 Tj = 125C 48 Tj = 25C 33 Tj = 125C 150 APT website - http://www.advancedpower.com ns nC 2-7 APTC80A10SCT - Rev 1 May, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTC80A10SCT Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) Test Conditions 50% duty cycle Min Tc = 125C Tj = 25C Tj = 175C Typ 20 1.6 2.6 VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 600V di/dt =1200A/s 56 Q Total Capacitance f = 1MHz, VR = 200V 180 f = 1MHz, VR = 400V 132 Max 1.8 3.0 Unit A V nC pF Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ Transistor Series diode Junction to Case Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink 2500 -40 -40 -40 Max 0.3 1.2 0.8 Unit C/W V 150 125 100 4.7 160 M5 C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.16 K Package outline Typ 68 4080 Max Unit kW K R 25 e ae 1 1 ou T: Thermistor temperature - //u RT: Thermistor value at T exp e B25 / 85 cc e T25 T ou e APT website - http://www.advancedpower.com 3-7 APTC80A10SCT - Rev 1 May, 2004 RT = Min APTC80A10SCT Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.1 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 150 VGS=15&10V 100 6.5V 80 6V 60 5.5V 40 5V 20 4.5V ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 120 90 60 T J=25C 30 T J=125C 4V 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 45 Normalized to VGS=10V @ 21A 1.3 VGS=10V 1.2 VGS=20V 1.1 1 0.9 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance T J=-55C 0 0 40 35 30 25 20 15 10 5 0 0.8 0 10 20 30 40 50 60 70 80 90 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (C) APT website - http://www.advancedpower.com 4-7 APTC80A10SCT - Rev 1 May, 2004 ID, Drain Current (A) 120 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 VGS=10V ID= 21A 2.5 2.0 1.5 1.0 0.5 0.0 -50 100 150 1000 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 Maximum Safe Operating Area Threshold Voltage vs Temperature 1.2 1.0 0.9 0.8 100 0 50 100 10ms 1 Coss 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) VGS, Gate to Source Voltage (V) Ciss Single pulse TJ=150C 100ms 0 TC, Case Temperature (C) 10000 1ms 1 150 Capacitance vs Drain to Source Voltage 100000 100s limited by RDSon 10 0.7 -50 C, Capacitance (pF) 0 TJ, Junction Temperature (C) TJ, Junction Temperature (C) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=42A TJ=25C 14 VDS=160V 12 VDS=400V 10 8 VDS=640V 6 4 2 0 0 50 APT website - http://www.advancedpower.com 100 150 200 250 300 Gate Charge (nC) 5-7 APTC80A10SCT - Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80A10SCT APTC80A10SCT Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 VDS=533V RG=1.8 TJ=125C L=100H 60 40 tr and tf (ns) td(on) 20 30 VDS=533V RG=1.8 TJ=125C L=100H 20 10 0 0 20 30 40 50 60 ID, Drain Current (A) 70 20 1.2 3 Switching Energy (mJ) Eon and Eoff (mJ) VDS=533V RG=1.8 TJ=125C L=100H 30 40 50 60 ID, Drain Current (A) 70 Switching Energy vs Gate Resistance Switching Energy vs Current 1.6 Eon 0.8 Eoff 0.4 VDS=533V ID=42A TJ=125C L=100H 2.5 2 Eoff 1.5 1 Eon 0.5 0 0 20 30 40 50 60 ID, Drain Current (A) 0 70 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=533V D=50% RG=1.8 TJ=125C 350 300 250 200 150 100 50 0 10 15 20 25 30 35 ID, Drain Current (A) 2.5 5 7.5 10 12.5 15 Gate Resistance (Ohms) 400 Frequency (kHz) tr 40 Source to Drain Diode Forward Voltage 1000 TJ=150C 100 TJ=25C 10 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) APT website - http://www.advancedpower.com 6-7 APTC80A10SCT - Rev 1 May, 2004 td(on) and td(off) (ns) td(off) 80 APTC80A10SCT Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 0 0.00001 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 800 30 TJ=75C 20 TJ=125C 10 TJ=175C 0 0 0.5 1 1.5 2 2.5 3 3.5 IR Reverse Current (A) IF Forward Current (A) TJ=25C 600 400 TJ=75C TJ=125C 200 TJ=175C 0 400 600 VF Forward Voltage (V) TJ=25C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 1600 1200 800 400 0 10 100 VR Reverse Voltage 1000 "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website - http://www.advancedpower.com 7-7 APTC80A10SCT - Rev 1 May, 2004 1