PESD5V0X1BCAL,315\"\" - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in

a leadless ultra small SOD882 Surface-Mo unte d Device (SMD) plastic package designed

to protect one signa l line fr om the dama ge c ause d by ESD and other transients. The

combination of extremely low capacitance, high ESD maximum rating and ultra small

package makes the device ideal for high-speed data line protection.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

Rev. 1 — 1 February 2012 Product data sheet

Bidirectional ESD protection of one line ESD protection up to 15 kV

Extremely low capacitance:

Cd=0.85pF

IEC 61000-4-2; level 4 (ESD)

Low clamping voltage: VCL =17V AEC-Q101 qualified

Ultra low leakage current: IRM =1nA

Computers and peripherals Communication systems

Audio and video equipment Portable electronics

Cellular handsets and accessories SIM card protection

10/100/1000 Mbit/s Ethernet USB, High-Definition Multimedia

Interface (HDMI), FireWire

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per device

VRWM reverse standoff voltage - - 5.5 V

Cddiode capacitance f = 1 MHz; VR= 0 V - 0.85 0.95 pF

Product data sheet Rev. 1 — 1 February 20 12 2 of 12

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

[1] Device stressed with ten non-repetitive current pulses (8/20 s exponential decay waveform according to

IEC 61000-4-5 and IEC 61643-321).

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode (diode 1)

2 cathode (diode 2)

Transparent

top view

sym045

Table 3. Ordering information

Type number Package

Name Description Version

PESD5V0X1BCAL - leadless ultra small plastic pa ckage; 2 terminals;

body 1.0 0.6 0.5 mm SOD882

Table 4. Marking codes

Type number Marking code

PESD5V0X1BCAL NN

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per device

IPPM rated peak pulse current tp=8/20s[1] -1.8A

Tjjunction temperature - 150 C

Tamb ambient temperature 55 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 1 — 1 February 20 12 3 of 12

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

[1] Device stressed with ten non-repetitive ESD pulses.

Table 6. ESD maximum ratings

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Max Unit

Per device

VESD electrostatic discharge voltage IEC 61000-4-2

(air discharge) [1] -15kV

IEC 61000-4-2

(contact discharge) [1] -15kV

machine model - 400 V

MIL-STD-883

(human body model) -10kV

Table 7. ESD standards compliance

Standard Conditions

Per device

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)

MIL-STD-883; class 3B (human body model) > 8 kV

Fig 1. 8/20 s pulse waveform according to

IEC 61000-4-5 Fig 2. ESD pulse wavefo rm according to

IEC 61000-4-2

t (μs)

0403010 20

001aaa630

120

IPP

(%)

e−t

100 % IPP; 8 μs

50 % IPP; 20 μs

001aaa631

100 %

90 %

30 ns 60 ns

10 %

= 0.7 ns to 1 ns

Product data sheet Rev. 1 — 1 February 20 12 4 of 12

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

6. Characteristics

[1] Device stressed with 8/20 s exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.

[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;

ANS/IESD STM5-1-2008.

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per device

VRWM reverse standoff

voltage --5.5V

IRM reverse leakage current VRWM =5.5V - <1 10 nA

VBR breakdown voltage IR=10mA 8.1 9.8 12.3 V

Cddiode capacitance f = 1 MHz; VR= 0 V - 0.85 0.95 pF

VCL clamping voltage IPPM =1.8A [1] --17V

rdyn dynamic resistance IR=10A [2] -0.5-

f=1MHz; T

amb =25C

Fig 3. Diode capacitance as a function of reverse

voltage; typical values Fig 4. V-I ch aracteristics for a bidirectional

ESD pr otection diode

VR (V)

054231

006aac886

0.7

0.8

0.6

0.9

1.0

(pF)

0.5

006aab325

−V

RWM

−I

−+

PPM

−I

PPM

Product data sheet Rev. 1 — 1 February 20 12 5 of 12

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

Fig 5. ESD clamping test setu p and waveforms

50 Ω

DUT

(DEVICE

UNDER

TEST)

GND

450 Ω

RG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

Cs = 150 pF; Rd = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10x

ATTENUATOR

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

unclamped –8 kV ESD pulse waveform

(IEC 61000-4-2 network)

GND

clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

006aac887

GND

clamped –8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 20 V/div

horizontal scale = 10 ns/div

vertical scale = 20 V/div

horizontal scale = 10 ns/div

vertical scale = 2 kV/div

horizontal scale = 10 ns/div

vertical scale = 2 kV/div

horizontal scale = 10 ns/div

Product data sheet Rev. 1 — 1 February 20 12 6 of 12

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

7. Application information

PESD5V0X1BCAL is designed for the protection of one bidirectional data or signal line

from surge pulses and ESD damage. The device is suitable on lines where the signal

polarities are both, positive and negative with respect to ground.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as clos e to the input terminal or connector as possible.

2. Minimize the path length between the device and the protected line.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

Fig 6. Application di ag ram

006aac986

PESD5V0X1BCAL

GND

line to be protected

Product data sheet Rev. 1 — 1 February 20 12 7 of 12

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Generic drawing for SOD882 package. This product has no cathode marking.

Fig 7. Package outline PESD5V0X1BCAL (SOD882)

03-04-17Dimensions in mm

0.55

0.47

0.65

0.62

0.55

0.50

0.46

cathode marking on top side (if applicable)

1.02

0.95

0.30

0.22

0.30

0.22

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

10000

PESD5V0X1BCAL SOD882 2 mm pitch, 8 mm tape and reel -315

Product data sheet Rev. 1 — 1 February 20 12 8 of 12

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

11. Soldering

Reflow soldering is the only recommended soldering method.

Fig 8. Reflow soldering footprint PESD5V0X1BCAL (SOD882)

solder lands

solder resist

occupied area

solder paste

sod882_fr

0.9

0.3

(2×)

R0.05 (8×)

0.6

(2×) 0.7

(2×)

0.4

(2×)

1.3

0.5

(2×)

0.8

(2×)

0.7

Dimensions in mm

Product data sheet Rev. 1 — 1 February 20 12 9 of 12

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

12. Revision history

Table 10. Revision history

Document ID Release da te Data sheet status Change notice Supersedes

PESD5V0X1BCAL v.1 20120201 Product data sheet - -

Product data sheet Rev. 1 — 1 February 20 12 10 of 12

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status o f device( s) described in this d ocument may have change d since this document w as publish ed and may di ffe r in case of multiple devices. The latest produ ct statu s

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

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Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

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Applications — Applications that are described herein for any of these

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representation or warranty tha t such application s will be suitable for the

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product develop ment.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 1 February 20 12 11 of 12

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference dat a is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PESD5V0X1BCAL

Extremely low capacitance bidirectional ESD protection diode

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 1 February 2012

Document identifier: PESD5V0X1BCAL

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information . . . . . . . . . . . . . . . . . . . . . 7

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information. . . . . . . . . . . . . . . . . . . . . 11

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12