MICROWAVE POWER GaN HEMT TGI1414-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER Pout=47.0dBm at Pin=42.0dBm HIGH GAIN GL=8.0dB at 14.0GHz to 14.5GHz BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE LOW INTERMODULATION DISTORTION IM3(Min.)=-25dBc at Po=40.0dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power SYMBOL Pout CONDITIONS Gain Flatness Drain Current Power Added Efficiency Gate Current Linear Gain G IDS1 add IgRF GL VDS = 24V 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDSset2.0A f = 14.0 to 14.5GHz @ Pin=42dBm @Pin=20dBm Two-Tone Test IM3 IDS2 Tch Po= 40.0dBm (Single Carrier Level) (VDS X IDS + Pin - Pout) X Rth(c-c) UNIT dBm MIN. 46.0 TYP. 47.0 MAX. dB A % mA dB -40 7.0 5.0 29 8.0 0.8 6.0 +100 dBc -25 A C 5.0 130 6.0 150 UNIT MIN. TYP. MAX. S 4.5 V -1 -4 -6 A 15 V -10 C/W 1.6 Recommended gate resistance(Rg) : Rg= 13.3 (TYP.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance SYMBOL gm CONDITIONS 5V Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO VDS= IDS= VDS= IDS= VDS= VGS= IGS= Rth(c-c) Channel to Case Pinch-off Voltage VGSoff 5.0A 5V 23mA 5V 0V -10mA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. December 9, 2011 TGI1414-50L ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 50 Gate-Source Voltage VGS V -10 Drain Current IDS A 15 Total Power Dissipation (Tc= 25 C) PT W 140 Channel Temperature Tch C 250 Storage Tstg C -65 to +175 PACKAGE OUTLINE ( 7- AA04A ) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2