DS30251 Rev. 4 - 2 1 of 3 BC856AW - BC858CW
www.diodes.com ã Diodes Incorporated
BC856AW - BC858CW
PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Current gain subgroup “C” is not available for BC856W.
Characteristic Symbol Value Unit
Collector-Base Voltage BC856
BC857
BC858
VCBO
-80
-50
-30
V
Collector-Emitter Voltage BC856
BC857
BC858
VCEO
-65
-45
-30
V
Emitter-Base Voltage VEBO -5.0 V
Collector Current IC-100 mA
Peak Collector Current ICM -200 mA
Peak Emitter Current IEM -200 mA
Power Dissipation (Note 1) Pd200 mW
Thermal Resistance, Junction to Ambient (Note 1) RqJA 625 °C/W
Operating and Storage Temperature Range Tj,T
STG -65 to +150 °C
Marking Code (Note 2)
Type Marking Type Marking
BC856AW K3A BC857CW K3G
BC856BW K3B BC858AW K3J, K3A, K3V
BC857AW K3V, K3A BC858BW K3K, K3B, K3W
BC857BW K3W, K3B BC858CW K3L, K3G
Maximum Ratings @ TA = 25°C unless otherwise specified
Features
·Ideally Suited for Automatic Insertion
·Complementary NPN Types Available
(BC846W-BC848W)
·For Switching and AF Amplifier Applications
·Also Available in Lead Free Version
·Case: SOT-323, Molded Plastic
·Case material - UL Flammability Rating
Classification 94V-0
·Moisture sensitivity: Level 1 per J-STD-020A
·Terminals: Solderable per MIL-STD-202, Method
208
·Also Available in Lead Free Plating (Matte Tin
Finish). Please see Ordering Information,
Note 5, on Page 2
·Pin Connections: See Diagram
·Marking Code: See Table Below & Diagram
on Page 2
·Ordering & Date Code Information: See Page 2
·Approx. Weight: 0.006 grams
Mechanical Data
A
M
JL
FD
BC
H
K
G
BE
C
SOT-323
Dim Min Max
A0.25 0.40
B1.15 1.35
C2.00 2.20
D0.65 Nominal
E0.30 0.40
G1.20 1.40
H1.80 2.20
J0.0 0.10
K0.90 1.00
L0.25 0.40
M0.10 0.18
a0°8°
All Dimensions in mm
SPICE MODELS: BC856AW BC856BW BC857AW BC857BW BC857CW BC858AW BC858BW BC858CW
DS30251 Rev. 4 - 2 2 of 3 BC856AW - BC858CW
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Electrical Characteristics
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage (Note 3) BC856
BC857
BC858
V(BR)CBO
-80
-50
-30
—
—
—
—
—
—
VIC = 10mA, IB = 0
Collector-Emitter Breakdown Voltage (Note 3) BC856
BC857
BC858
V(BR)CEO
-65
-45
-30
—
—
—
—
—
—
VIC = 10mA, IB = 0
Emitter-Base Breakdown Voltage (Note 3) V(BR)EBO -5 — — V IE = 1mA, IC = 0
DC Current Gain (Note 3) Current Gain Group A
B
C
hFE
125
220
420
180
290
520
250
475
800
—VCE = -5.0V, IC = -2.0mA
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) —-75
-250
-300
-650 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage (Note 3) VBE(SAT) —
—
-700
-850
—
-950 mV IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Voltage (Note 3) VBE(ON) -600
—
-650
—
-750
-820 mV VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
Collector-Cutoff Current (Note 3) ICBO
ICBO
—
—
—
—
-15
-4.0
nA
µA
VCB = -30V
VCB = -30V, TA = 150°C
Gain Bandwidth Product fT100 200 — MHz VCE = -5.0V, IC = -10mA,
f = 100MHz
Collector-Base Capacitance CCBO — 3 4.5 pF VCB = -10V, f = 1.0MHz
Noise Figure NF — — 10 dB
VCE = -5.0V, IC = 200µA,
RS = 2kW, f = 1kHz,
Df = 200Hz
Notes: 3. Short duration pulse test to minimize self-heating effect.
@ TA =25°C unless otherwise specified
XXX = Product Type Marking Code (See Page 1), e.g. K3A = BC856AW
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
XXX
YM
Marking Information
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
*xx = device type, e.g. BC856AW-7.
5. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above.
Example: BC856AW-7-F.
Device Packaging Shipping
BC85xxW-7* SOT-323 3000/Tape & Reel
Ordering Information (Note 4)
Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1234567
89 OND
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
Code JKLMNPR
ST U VW
DS30251 Rev. 4 - 2 3 of 3 BC856AW - BC858CW
www.diodes.com
1
0.1 10 100 1000
V , COLLECTOR TO EMITTER
CE(SAT)
SATURATION VOLTAGE (V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2 Collector Emitter Saturation Voltage
vs. Collector Current
T = 25°C
A
T=-50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0
.5
IC
IB
=10
0
50
100
25 50 75 100 125 150 175 200
P , POWER DISSIPATION (mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Tem
p
erature
150
200
2
5
0
0
10
100
1000
110 100
f , GAIN BANDWIDTH PRODUCT (MHz)
t
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 4, Gain Bandwidth Product vs Collector Current
V= 5V
CE
1
10
100
1000
110 100 1000
V = 5V
CE
h , DC CURRENT GAIN (NORMALIZED)
FE
I , COLLECTOR CURRENT (mA)
C
Fi
g
. 3, DC Current Gain
(
Group B
)
vs. Collector Current
T = 25°C
A
T = -50°C
A
T = 150°C
A
