RH1034-1.2
1
DESCRIPTION
Micropower Dual
Reference
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Operating Current ..................................................20mA
Forward Current (Note 2) .......................................20mA
Operating Temperature Range................ –55°C to 125°C
Storage Temperature Range ................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec) ..................300°C
PACKAGE INFORMATION
The RH1034-1.2 is a micropower, precision 1.2V reference
combined with a 7V auxiliary reference. The 1.2V reference
is a trimmed, thin-fi lm, band-gap, voltage reference oper-
ating on only 20μA of quiescent current. The RH1034-1.2
offers guaranteed drift, low temperature cycling hysteresis
and good long-term stability. The low dynamic impedance
makes the RH1034-1.2 easy to use from unregulated sup-
plies. The 7V reference is a subsurface zener device for
less demanding applications.
The wafer lots are processed to Linear Technology’s in-
house Class S fl ow to yield circuits usable in stringent
military applications.
14k
20V
7V
19.1k
1.2V
RH10341.2 BC
BURN-IN CIRCUIT
BOTTOM VIEW
H PACKAGE
3-LEAD TO-46 METAL CAN
1.2V
7V
TOP VIEW
W PACKAGE
10-LEAD CERPAC
1
5
4
3
2
10
6
7
8
9
NC
NC
7V
1.2V
NC
NC
NC
GND
NC
NC
L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear
Technology Corporation. All other trademarks are the property of their respective owners.
RH1034-1.2
2
TABLE 1: ELECTRICAL CHARACTERISTICS
(Preirradiation)
SYMBOL PARAMETER CONDITIONS NOTES MIN TYP MAX
SUB-
GROUP MIN TYP MAX
SUB-
GROUP UNITS
1.2V Reference
VZReverse Breakdown Voltage IR = 100μA 1.210 1.240 1 1.195 1.255 2, 3 V
ΔVZ
ΔIR
Reverse Breakdown Voltage
Change with Current
20μA ≤ IR ≤ 2mA
2mA ≤ IR ≤ 20mA
2.0
8.0
1
1
4.0
15.0
2, 3
2, 3
mV
mV
Minimum Operating Current 20 1 30 2, 3 μA
Temperature Coeffi cient IR = 100μA 60 1 60 2, 3 ppm/°C
rz Reverse Dynamic
Impedance
IR = 100μA 3 1.0 1 2.0 2, 3 Ω
Low Frequency Noise IR = 100μA, 0.1Hz ≤ f ≤ 10Hz 4 μVP-P
Long-Term Stability IR = 100μA 20 ppm/√kHrs
7V Reference
VZReverse Breakdown Voltage IR = 100μA 6.70 7.30 1 6.60 7.40 2, 3 V
ΔVZ
ΔIR
Reverse Breakdown Voltage
Change with Current
100μA ≤ IR ≤ 1mA
1mA ≤ IR ≤ 20mA
140
250
1
1
190
350
2, 3
2, 3
mV
mV
Temperature Coeffi cient IR = 100μA 60 ppm/°C
Long-Term Stability IR = 100μA 20 ppm/√kHrs
TA = 25°C –55°C ≤ TA ≤ 125°C
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
TABLE 2: ELECTRICAL CHARACTERISTICS
(Postirradiation) TA = 25°C.
SYMBOL PARAMETER CONDTIONS NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS
1.2V Reference
VZ Reverse Breakdown
Voltage
IR = 100μA 1.202 1.305 1.202 1.315 1.202 1.325 1.202 1.340 1.202 1.370 V
ΔVZ
ΔIR
Reverse Breakdown
Voltage Change with
Current
20μA ≤ IR ≤ 2mA
2mA ≤ IR ≤ 20mA
7.0
15.0
7.5
16.5
8.5
18.5
10.0
22.5
12.5
30.5
mV
mV
rz Reverse Dynamic
Impedance
IR = 100μA 3 3.5 3.75 4.25 5.0 6.25 Ω
7V Reference
VZ Reverse Breakdown
Voltage
IR = 100μA 6.686 7.314 6.686 7.314 6.686 7.314 6.686 7.324 6.686 7.334 V
ΔVZ
ΔIR
Reverse Breakdown
Voltage Change with
Current
100μA ≤ IR ≤ 1mA
1mA ≤ IR ≤ 20mA
175
300
175
300
175
300
175
300
175
300
mV
mV
10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si)
Note 2: Forward biasing either diode will affect the operation of the other
diode.
Note 3: This parameter guaranteed by “reverse breakdown voltage change
with current” test.
RH1034-1.2
3
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
TABLE 4: ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS SUBGROUP
Final Electrical Test Requirements (Method 5004) 1*,2,3
Group A Test Requirements (Method 5005) 1,2,3
Group B and D for Class S,
End Point Electrical Parameters (Method 5005)
1,2,3
*PDA applies to subgroup 1. See PDA Test Notes.
PDA Test Notes
The PDA is specifi ed as 5% based on failures from group A, subgroup 1,
tests after cooldown as the fi nal electrical test in accordance with method
5004 of MIL-STD-883. The verifi ed failures of group A, subgroup 1, after
burn-in divided by the total number of devices submitted for burn-in in that
lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
TOTAL DOSE BIAS CIRCUIT
TABLE 3: POST BURN-IN ENDPOINTS AND DELTA LIMITS
REQUIREMENTS
TA = 25°C
SYMBOL PARAMETER CONDITIONS
ENDPOINTS LIMITS DELTA LIMITS
UNITSMIN MAX MIN MAX
VZReverse Breakdown Voltage IR = 100μA 1.210 1.240 –0.003 0.003 V
14k
20V
7V
19.1k
1.2V
RH10341.2 BC
RH1034-1.2
4
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2008
LT 0909 REV C • PRINTED IN USA
I.D. No. 66-10-103412
TOTAL DOSE KRAD (Si)
1
1.220
REVERSE BREAKDOWN VOLTAGE (V)
1.260
1.270
1.280
10 100 1000
RH10341.2 G01
1.250
1.240
1.230
IR = 100μA
TYPICAL PERFORMANCE CHARACTERISTICS
Reverse Breakdown Voltage
Change with Current (1.2V)
Reverse Breakdown Voltage (1.2V)
TOTAL DOSE KRAD (Si)
1
2.0
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT (mV)
3.0
4.5
4.0
10 100 1000
RH10341.2 G02
1.0
1.5
2.5
3.5
0.5
0
20μA ≤ IR ≤ 2mA
Reverse Breakdown Voltage
Change with Current (1.2V)
TOTAL DOSE KRAD (Si)
1
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT (mV)
15
20
10 100 1000
RH10341.2 G03
10
5
0
2mA ≤ IR ≤ 20mA
Reverse Breakdown Voltage
Change with Current (7V)Reverse Breakdown Voltage (7V)
Reverse Breakdown Voltage
Change with Current (7V)
TOTAL DOSE KRAD (Si)
1
6.997
REVERSE BREAKDOWN VOLTAGE (V)
7.000
7.001
7.002
10 100 1000
RH10341.2 G04
6.999
6.998
IR = 100μA
TOTAL DOSE KRAD (Si)
1
92.2
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT (mV)
92.6
93.0
10 100 1000
RH10341.2 G05
91.8
92.0
92.4
92.8
91.6
91.4
100μA ≤ IR ≤ 1mA
TOTAL DOSE KRAD (Si)
1
166
REVERSE BREAKDOWN VOLTAGE
CHANGE WITH CURRENT (mV)
168
170
172
10 100 1000
RH10341.2 G06
164
162
160
158
1mA ≤ IR ≤ 20mA
