RH1034-1.2 Micropower Dual Reference DESCRIPTION ABSOLUTE MAXIMUM RATINGS The RH1034-1.2 is a micropower, precision 1.2V reference combined with a 7V auxiliary reference. The 1.2V reference is a trimmed, thin-film, band-gap, voltage reference operating on only 20A of quiescent current. The RH1034-1.2 offers guaranteed drift, low temperature cycling hysteresis and good long-term stability. The low dynamic impedance makes the RH1034-1.2 easy to use from unregulated supplies. The 7V reference is a subsurface zener device for less demanding applications. (Note 1) Operating Current ..................................................20mA Forward Current (Note 2) .......................................20mA Operating Temperature Range................ -55C to 125C Storage Temperature Range................... -65C to 150C Lead Temperature (Soldering, 10 sec) .................. 300C L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. The wafer lots are processed to Linear Technology's inhouse Class S flow to yield circuits usable in stringent military applications. PACKAGE INFORMATION TOP VIEW BOTTOM VIEW 1.2V 7V NC 1 10 NC NC 2 9 NC NC 3 8 1.2V GND 4 7 7V NC 5 6 NC H PACKAGE 3-LEAD TO-46 METAL CAN W PACKAGE 10-LEAD CERPAC BURN-IN CIRCUIT 20V 14k 19.1k 7V 1.2V RH10341.2 BC 1 RH1034-1.2 TABLE 1: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS (Preirradiation) NOTES MIN TA = 25C TYP MAX 1.210 1.240 1 SUBGROUP -55C TA 125C SUBMIN TYP MAX GROUP UNITS 1.2V Reference VZ Reverse Breakdown Voltage IR = 100A VZ IR Reverse Breakdown Voltage 20A IR 2mA Change with Current 2mA IR 20mA 2.0 8.0 Minimum Operating Current rz Temperature Coefficient IR = 100A Reverse Dynamic Impedance IR = 100A 3 1.195 1.255 2, 3 V 1 1 4.0 15.0 2, 3 2, 3 mV mV 20 1 30 2, 3 A 60 1 60 2, 3 ppm/C 1.0 1 2.0 2, 3 Low Frequency Noise IR = 100A, 0.1Hz f 10Hz 4 VP-P Long-Term Stability IR = 100A 20 ppm/kHrs 7V Reference VZ Reverse Breakdown Voltage IR = 100A VZ IR Reverse Breakdown Voltage 100A IR 1mA Change with Current 1mA IR 20mA 6.70 7.30 1 140 250 1 1 6.60 7.40 2, 3 V 190 350 2, 3 2, 3 mV mV Temperature Coefficient IR = 100A 60 ppm/C Long-Term Stability IR = 100A 20 ppm/kHrs TABLE 2: ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER (Postirradiation) TA = 25C. CONDTIONS 10KRAD(Si) 20KRAD(Si) 50KRAD(Si) 100KRAD(Si) 200KRAD(Si) NOTES MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS 1.202 1.305 1.202 1.315 1.202 1.325 1.202 1.340 1.202 1.370 1.2V Reference VZ Reverse Breakdown Voltage IR = 100A VZ IR Reverse Breakdown Voltage Change with Current 20A IR 2mA 2mA IR 20mA rz Reverse Dynamic Impedance IR = 100A 3 V 7.0 15.0 7.5 16.5 8.5 18.5 10.0 22.5 12.5 30.5 mV mV 3.5 3.75 4.25 5.0 6.25 6.686 7.314 6.686 7.314 6.686 7.314 6.686 7.324 6.686 7.334 V 7V Reference VZ Reverse Breakdown Voltage IR = 100A VZ IR Reverse Breakdown Voltage Change with Current 100A IR 1mA 1mA IR 20mA Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. 2 175 300 175 300 175 300 175 300 175 300 mV mV Note 2: Forward biasing either diode will affect the operation of the other diode. Note 3: This parameter guaranteed by "reverse breakdown voltage change with current" test. RH1034-1.2 TABLE 3: POST BURN-IN ENDPOINTS AND DELTA LIMITS REQUIREMENTS TA = 25C ENDPOINTS LIMITS SYMBOL PARAMETER VZ Reverse Breakdown Voltage DELTA LIMITS CONDITIONS MIN MAX MIN MAX UNITS IR = 100A 1.210 1.240 -0.003 0.003 V TABLE 4: ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS PDA Test Notes The PDA is specified as 5% based on failures from group A, subgroup 1, tests after cooldown as the final electrical test in accordance with method 5004 of MIL-STD-883. The verified failures of group A, subgroup 1, after burn-in divided by the total number of devices submitted for burn-in in that lot shall be used to determine the percent for the lot. Linear Technology Corporation reserves the right to test to tighter limits than those given. SUBGROUP Final Electrical Test Requirements (Method 5004) 1*,2,3 Group A Test Requirements (Method 5005) 1,2,3 Group B and D for Class S, End Point Electrical Parameters (Method 5005) 1,2,3 *PDA applies to subgroup 1. See PDA Test Notes. TOTAL DOSE BIAS CIRCUIT 20V 14k 19.1k 7V 1.2V RH10341.2 BC Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 3 RH1034-1.2 TYPICAL PERFORMANCE CHARACTERISTICS Reverse Breakdown Voltage Change with Current (1.2V) Reverse Breakdown Voltage (1.2V) 4.5 IR = 100A REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) 1.270 3.5 1.260 1.250 1.240 1.230 3.0 2.5 2.0 1.5 1.0 2mA IR 20mA 15 10 5 0.5 0 1.220 1 10 100 TOTAL DOSE KRAD (Si) 0 10 100 TOTAL DOSE KRAD (Si) 1 1000 7.002 93.0 7.001 7.000 6.999 6.998 6.997 172 100A IR 1mA 92.8 92.6 92.4 92.2 92.0 91.8 91.6 91.4 1000 1000 Reverse Breakdown Voltage Change with Current (7V) REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) IR = 100A 10 100 TOTAL DOSE KRAD (Si) 10 100 TOTAL DOSE KRAD (Si) RH10341.2 G03 Reverse Breakdown Voltage Change with Current (7V) Reverse Breakdown Voltage (7V) 1 1 1000 RH10341.2 G02 RH10341.2 G01 REVERSE BREAKDOWN VOLTAGE (V) 20 20A IR 2mA 4.0 REVERSE BREAKDOWN VOLTAGE CHANGE WITH CURRENT (mV) REVERSE BREAKDOWN VOLTAGE (V) 1.280 Reverse Breakdown Voltage Change with Current (1.2V) 1mA IR 20mA 170 168 166 164 162 160 158 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH10341.2 G05 RH10341.2 G04 1 10 100 TOTAL DOSE KRAD (Si) 1000 RH10341.2 G06 I.D. No. 66-10-103412 4 Linear Technology Corporation LT 0909 REV C * PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 www.linear.com (c) LINEAR TECHNOLOGY CORPORATION 2008