MOTOROLA SC {XSTRS/R FT ..6367254 MOTOROLA SC CXSTRS/R F) MOTOROLA m= SEMICONDUCTOR TECHNICAL DATA 44 DE Bese 7esu O0ase43 4 i 88D 83283 D T-TF%-OFT Advance Information IRFF110 Small-Signal IRFF113 mall-Signa a Zz Field Effect Transistor N-Channel Enhancement-Moade Silicon Gate TMOS N-CHANNEL TMOS POWER FETs ..- designed for low voltage, high speed power switching DSion) voiss applications such as switching regulators, converters, so- TVviOS. = 08 OHM lenoid, relay drivers, inverters, choppers, audio amplifiers, DSion) Ts and high energy pulse circuits. b Silicon Gate for Fast Switching Speeds @ Low Drive Current Required @ Easy Paralleling @ No Second Breakdown Excellent Temperature Stability 8 3 CASE 79.03 ani MAXIMUM RATINGS Rating Symbol {RFF110 IRFF113 Unit Drain-Source Voltage Vpss 100 60 Vde Drain-Gate Voltage (Rgg = 1 m0) VDGR 100 60 Vde Gate-Source Voltage Ves +20 Vde Drain Current Adc Continuous Ip 3.5 3 Pulsed lpm 14 12 Total Power Dissipation @ Te = 25C Pp 15 Watts Derate above 25C 0.12 Wrc Operating and Storage Temperature Range Ty: Tstg 55 to 150 C THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Rec 8.33 CW Junction to Ambient ReJA 175 Maximum Lead Temperature TL 300 c 1.6 mm from Case for 10 5 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS Vde (VGs = 0, Ip = 250 2A) IRFF110 100 _ IRFF113 60 _ Zero Gate Voltage Drain Current loss _ 250 BAdC (Vpg = Rated Voss, Veg = 0) {continued) This document contains information on a new product. Specifications and information herein are subject to change without notice. 3-145 MOTOROLA TMOS POWER MOSFET DATA