CRS04
2002-04-01
1
Toshiba Schottky Barrier Rectifier Schottky Barrier Type
CRS04
Switching Type Power Supply Applications
Portable Equipment Battery Applications
· Forward voltage: VFM = 0.49 V (max)
· Average forward current: IF (AV) = 1.0 A
· Repetitive peak reverse voltage: VRRM = 40 V
· Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
Maximum Ratings (Ta =
==
= 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage VRRM 40 V
Average forward current IF (AV) 1.0 (Note) A
Peak one cycle surge forward current
(non-repetitive) IFSM 20 (50 Hz) A
Junction temperature Tj -40~150 °C
Storage temperature Tstg -40~150 °C
Note : Tℓ = 31°C: Rectangular waveform (a = 180°C), VR = 20 V
Glass-epoxy substrate (substrate size: 50 mm ´ 50 mm,
soldering land: 6 mm ´ 6 mm)
Electrical Characteristics (Ta =
==
= 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
VFM (1) I
FM = 0.1 A ¾ 0.395 ¾
VFM (2) I
FM = 0.7 A ¾ 0.475 0.49
Peak forward voltage
VFM (3) I
FM = 1.0 A ¾ 0.51 ¾
V
IRRM (1) V
RRM = 5 V ¾ 0.6 ¾
Repetitive peak reverse current
IRRM (2) V
RRM = 40 V ¾ ¾ 100
mA
Junction capacitance Cj V
R = 10 V, f = 1.0 MHz ¾ 47 ¾ pF
Device mounted on a ceramic board
(soldering land: 2 mm ´ 2 mm)
¾ ¾ 70
Thermal resistance (junction to ambient) Rth (j-a) Device mounted on a glass-epoxy
board
(soldering land: 6 mm ´ 6 mm)
¾ ¾ 140
°C/W
Thermal resistance (junction to lead) Rth (j-ℓ) ¾ ¾ ¾ 20 °C/W
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 3-2A1A
Weight: 0.013 g (typ.)
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2002-04-01
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Marking Following Indicates the Date of
Manufacture
Standard Soldering Pad
Handling Precaution
Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier
products. This current leakage and improper operating temperature or voltage may cause thermal runaway.
Please take forward and reverse loss into consideration when you design.
Cathode mark
Product no. (abbr.)
Lot number
S4
Month of
manufac-
ture
January to December
are denoted by letter A
to L respectivel
y
.
Year of
manufac-
ture
Last decimal digit of
the year of
manufacture
2.8
1.2
1.2
Unit: mm
012 3 4
5 6 7 8 9
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2002-04-01
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Transient thermal impedance
rth (j-a) (°C/W)
Maximum allowable lead ltemperature
Ta m a x (°C )
Instantaneous forward voltage VF (V)
iF – vF
Instantaneous forward current iF (A)
Average forward current IF (AV) (A)
PF (AV) – IF (AV)
Average forward power dissipation
PF (AV) (W)
Average forward current IF (AV) (A)
Ta m ax – IF (AV)
Ceramic substrate (substrate size: 50 mm ´ 50 mm)
Maximum allowable ltemperature
Ta m a x (°C )
Average forward current IF (AV) (A)
Ta ma x – I F (AV)
Glass-epoxy substrate (substrate size:
50 mm ´ 50 mm, soldering land: 6 mm ´ 6 mm)
time t (ms)
rth (j-a) – t
0 0.2
0.01
0.1
1
10
0.4 0.6 0.8 1.0 1.4 1.2
75°C
25°C
125°C
Tj = 150°C
0.0
160
0.2 0.6 0.8 1.0 1.4 1.60.4 1.2
0
40
20
60
120
100
80
a = 60° 120° DC
360° 0°
Rectangular waveform
a
VR = 20 V
IF
(
AV
)
Conduction angle a
180°
140
②
①
① Device mounted on a ceramic board:
Soldering land: 2 mm ´ 2 mm
② Device mounted on a glass-epoxy board:
Soldering land: 6 mm ´ 6 mm
0.1
1
100
1000
1 10 100 1000001000 10000
10
180° 120°
0.0
0
40
160
0.2 0.6 0.8 1.0 1.4 1.6
20
60
120
100
0.4 1.2
80
a = 60°
DC
360° 0° a
VR = 15 V
IF
(
A
V
)
Conduction
an
g
le a
140
Rectangular
waveform
0.0 0.2 0.6 0.8 1.0 1.4 1.60.4 1.2 0.0 0.2 0.6 0.8 1.0 1.4 1.60.4 1.2
0.8
0
0.4
0
0.2
0.1
0.3
0.5
360° 0°
Rectangular
waveform
a
Conduction angle a
a = 60°
120°
180°
DC
0.6
0.7
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Average reverse power dissipation
PR (AV) (W)
Number of cycles
Surge forward current
(non-repetitive)
Peak surge forward current IFSM (A)
Reverse voltage VR (V)
Cj – VR (typ.)
Junction ca
p
acitance C
j
(
p
F
)
Junction temperature Tj (°C)
I
R – Tj (typ.)
Reverse current IR (mA)
Reverse voltage VR (V)
PR (AV) – VR (typ.)
1 100 10
0
8
16
32
20
24
4
12
28 Ta = 25°C
f = 50 Hz
f = 1 MHz
Ta = 25°C
1
100
300
10 100
10
500
30
50
3 30 5 50
0 20 120 80 40 60 100
100
1
0.0001
0.01
10
140
0.1
160
0.001
Pulse test
VR = 5 V
20 V
10 V
40 V
30 V
0.3
0
0.1
0.2
0.4
0.6
0.5
0 10 20 40 30
60°
120°
180°
240°
300°
DC
360°0°
Rectangula
r
waveform
Conduction angle a
Tj = 150°C
VR
CRS04
2002-04-01
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· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
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conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
RESTRICTIONS O N PRODUCT USE