TOSHIBA 2SA1015(L) TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 25A10150 AUDIO FREQUENCY AMPLIFIER APPLICATIONS Unit in mm LOW NOISE AMPLIFIER APPLICATIONS @ High Voltage and High Current SNA > VCEO = 50V (Min.), Ic = 150mA (Max.) % e 8 6Excellent hg Linearity = : hp (2)=80(Typ.) at Vop=6V, Ic = 150mA are : hrp dc=0.1mA)/hppr Ic= 2mA)=0.95 (Typ.) =| 2 Low Noise: NF=0.2dB (Typ.) (f=1kHz) a = @ Complementary to 28C18150) = MAXIMUM RATINGS (Ta = 25C) 1.27 . CHARACTERISTIC SYMBOL | RATING | UNIT { et 3 > Collector-Base Voltage VCBO 50 Vv Cio = Collector-Emitter Voltage VCEO 50 Vv ~ Emitter-Base Voltage VEBO 5 Vv 1. EMITTER Collector Current Ie 150 mA 2. COLLECTOR Base Current Ip 50 mA 3. BASE Collector Power Dissipation Pc 400 mW || JEDEC TC-92 Junction Temperature Tj 125 C EIAJ SC-43 Storage Temperature Range Tstg 55~125 C TOSHIBA 2-5F1B ELECTRICAL CHARACTERISTICS (Ta = 25C) Weight : 0.21g CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBO VcB= 50V, In=0 |-0.1 | A Emitter Cut-off Current IEBO VEB= 45V, Ic=0 |-0.1 | 4A FE (1) VcE=-6V, Ic=2mA 7 4 DC Current Gain (Note) CE iC 0 00 hre(2) | VcE=6V, Ic=-150mA 25 80 | Collector-Emitter Saturation _ _ Voltage VCE (sat) |Ic= 100mA, Ig=-10mA | | -0.1/-03 | V Base-Emitter Saturation Voltage | VBE (sat)|IG=100mA, Ip=10mA | |-ll Vv Transition Frequency fp VcE=10V, Ic = 1mA 80 | | MHz Collector Output Capacitance Cob VcB= 10V, In=0 4 7 | pF f=1MHz i. . Vcp=10V, Ig=1mA Base Intrinsic Resistance Ybb f=30MHz 30]; OQ VcE= 6V, I=0.1mA Noise Fi NF) | f=100Hz, Rg=10k0 | 05) 6 B onse mgure ri | WCE=6V, I=0.1mA 5 NF(2) | plikHz, RG=10k2 | 2 3 Note : hyg (1) Classification 0 : 70~140, Y : 120~240, GR : 200~400 961001 EAA2 TOSHIBA Semiconductor Reliability Handbook. @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the 1996-09-02 1/2TOSHIBA 2SA1015(L) Ic VCE 240 T q 2.0 | COMMON & / . 7 15 EMITTER & 7 Ta =25C 160 [ ya a - T z YY -1.0 e | _ 5 i oO YY 0.5 8 -80 + o Yq] Ip=0.2mA 4 oo 0 0 0 2 4 6 -8 COLLECTOR-EMITTER VOLTAGE Ver (V) hFrE Ic Ta =100C = COMMON EMITTER Vcr=-6V ---- Vor=-1V DC CURRENT GAIN hprgp 1 -0.1 -03 -1 -3 -10 -30 100 COLLECTOR CURRENT Ic (mA) Zz VCE (sat) Ic Bo -0 Be COMMON Pp _ 93) EMITTER Se I/Ip=10 BS 0.1 ES =. -0 a ae 0 25 ee -25 BP oot z -0.1 -03 --1 -8 -10 -30 -100 o COLLECTOR CURRENT Ig (mA) Zi _ gs VBE (sat) IC <5 COMMON 5 q ~| EMITTER 2 Ig /Ig=10 ae Ta=25C aa i EB -o BE 0 HO Q> mo 01 -0.1 -0.3 -1 -3 -10 -80 -100 COLLECTOR CURRENT Ic (mA) COLLECTOR POWER DISSIPATION Ip VBE COMMON EMITTER VcoE=-6V Ta=100C BASE CURRENT Ip (yA) -02 -04 -06 -0.8 -10 -12 -14 -16 BASE-EMITTER VOLTAGE VpE (V) fr I COMMON EMITTER Vcg=10V Ta=25C 0.1 -0.3 -1 -3 -10 -30 100 TRANSITION FREQUENCY ft (MHz) COLLECTOR CURRENT Ic (mA) Pc - Ta Pc (mW) 0 25 50 5 100 125 AMBIENT TEMPERATURE Ta (C) 961001EAA2 @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1996-09-02 2/2