NJG1107HA8
- 1 -
Ver.2006-08-25
LOW NOISE AMPLIFIER GaAs MMIC
QGENERAL DESCRIPTION QPACKAGE OUTLINE
NJG1107HA8 is a Low Noise Amplifier GaAs MMIC
designed for GPS. This amplifier provides low noise figure,
high gain and high input IP3 operated by single low positive
power supply.
This amplifier includes internal self-bias circuit and input
DC blocking capacitor.
This amplifier can be tuned to wide frequency point
(1.5GHz~2.4GHz).
An ultra small and ultra thin package of USB6-A8 is
adopted.
QFEATURES
OLow voltage operation +2.7V typ.
OLow current consumption 2.5mA typ.
OHigh small signal gain 17dB typ. @f=1.575GHz
OLow noise figure 1.1dB typ. @f=1.575GHz
OHigh Input IP3 -4.0dBm typ. @f=1.575+1.5751GHz
OUltra small & ultra thin package USB6-A8(Mount Size: 1.0x1.2x0.38mm)
QPIN CONFIGURATION
Note: Specifications and description listed in this catalog are subject to change without prior notice.
NJG1107HA8
HA8 Type
(Top View)
Pin Connection
1. RFOUT
2. EXTCAP
3. GND
4. GND
5. RFIN
6. N/C
A
MP
1
2
3
6
5
4
NJG1107HA8
- 2 -
QABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50ohm
PARAMETER SYMBOL CONDITIONS RATINGS UNIT
Drain Voltage VDD 6.0 V
Input Power Pin VDD=2.7V +15 dBm
Power Dissipation PD At on PCB board 135 mW
Operating Temp. Topr -40~+85 °C
Storage Temp. Tstg -55~+150 °C
QELECTRICAL CHARACTERISTICS
VDD=2.7V, f=1.575GHz, Ta=+25°C, Zs=Zl=50ohm, TEST CIRCUIT
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
Operating Frequency freq1 1.57 1.575 1.58 GHz
Drain Voltage VDD 2.5 2.7 5.5 V
Operating Current IDD RF OFF - 2.5 3.2 mA
Small Signal Gain Gain 15.0 17.0 - dB
Noise Figure NF - 1.1 1.3 dB
Pin at 1dB Gain
Compression point P-1dB -20.0 -16.0 - dBm
Input 3rd Order
Intercept Point IIP3 f=1.575+1.5751GHz
RFin=-35dBm -7.0 -4.0 - dBm
RF Input Port
VSWR VSWRi - 1.6 2.0
RF Output Port
VSWR VSWRo 1.6 2.0
NJG1107HA8
- 3 -
QPIN CONFIGURATION
Pin Function Description
1 Rfout
RF output and voltage supply pin. External matching circuits and a bypass
capacitor is required. L3 is a RF choke inductor and C1 is a DC blocking
capacitor. These elements are used as output matching circuit. C2 is a bypass
capacitor.
2 EXTCAP An external bypass capacitor is required.
3,4 GND Ground pin. To keep good RF grounding performance, please use multiple via
holes to connect with ground plane and this pin.
5 Rfin RF input pin. A DC blocking capacitor is not required. An external matching
circuit is required.
6 N/C Neutral terminal. Should be connected to the ground.
NJG1107HA8
- 4 -
QTYPICAL CHARACTERISTICS
-100
-80
-60
-40
-20
0
20
-40-35-30-25-20-15-10 -5 0
Pout, IM3 vs. Pin
Pout, IM3 (dBm)
Pin (dBm)
Pout
IM3
IIP3=-4.0dBm
(VDD=2.7V, f1=1575MHz, f2=f1+100kHz, Ta=25oC)
0
0.5
1
1.5
2
2.5
3
3.5
4
1.5 1.55 1.6 1.65
NF vs. frequency
NF (dB)
frequ en cy ( MH z)
NF
(VDD=2.7V, Ta=25oC)
-30
-25
-20
-15
-10
-5
0
5
10
-40-35-30-25-20-15-10 -5 0
Pout vs. Pin
Pout (dBm )
Pin (dBm)
Pout
P-1dB(IN)=-15.3dBm
(VDD=2.7V, f=1575MHz, Ta=25 oC)
0
5
10
15
20
0 5 10 15 20
k factor vs. frequency
k factor
fr equen cy ( G Hz)
(VDD=2.7V, Ta=25oC)
12
13
14
15
16
17
18
19
0
1
2
3
4
5
6
7
2.533.544.55
Gain, NF vs. VDD
Gain (dB)
NF (dB)
VDD (V)
(f=1575MHz, Ta=25oC)
Gain
NF
0
1
2
3
4
5
2.533.544.55
IDD vs. VDD
IDD (mA)
VDD (V)
(RF=OFF, Ta=25 oC)
IDD
NJG1107HA8
- 5 -
QTYPICAL CHARACTERISTICS
-20
-18
-16
-14
-12
-10
-8
-6
2.533.544.55
P-1dB(IN) vs. VDD
P-1dB(IN) (dBm)
VDD (V)
(f=1575MHz, Ta=25 oC)
P-1dB(IN)
6
8
10
12
14
16
18
20
-6
-4
-2
0
2
4
6
8
2.533.544.55
OIP3, IIP3 vs. VDD
OIP3 (dBm)
IIP3 (dBm)
VDD (V)
(f1=1575MHz, f2=f1+100kHz, Pin=-35dBm, Ta=25oC)
OIP3
IIP3
0
1
2
3
4
5
-50 0 50 100
IDD vs. Temperature
IDD (mA)
Temperature (oC)
(VDD=2.7V, RF=OFF)
IDD
-24
-22
-20
-18
-16
-14
-12
-10
-8
-50 0 50 100
P-1dB(IN) vs. Temperature
P-1dB(IN) (dBm)
Temperature (oC)
(VDD=2. 7V, f=15 7 5MHz)
P-1dB(IN)
7
8
9
10
11
12
13
14
15
-6
-5
-4
-3
-2
-1
0
1
2
-50 0 50 100
OIP3, IIP3 vs. Temperature
OIP3 (dBm)
IIP3 (dBm)
Tem p erat ure (oC)
(VDD=2.7V, f1=1575MHz, f2=f1+100kHz, Pin=-35dBm)
OIP3
IIP3
11
12
13
14
15
16
17
18
19
0
0.5
1
1.5
2
2.5
3
3.5
4
-50 0 50 100
Gain, NF vs. Temperature
Gain (dB)
NF (dB)
Tem p erat ure (oC)
(VDD=2.7V, f= 157 5MHz)
Gain
NF
NJG1107HA8
- 6 -
QTYPICAL CHARACTERISTICS
NJG1107HA8
- 7 -
QTEST CIRCUIT
QRECOMMENDED PCB DESIGN
Parts ID Comment
L1, L3, L4 TDK (MLK0603)
L2 TDK (MLG1005)
C1~C3 MURATA (GRM03)
RFIN
GND
RFOUT
EXTCAP
4
5
2
6
1
3
N/C
GND
L2
12nH L4
22nH
L3
3.9nH
C1
2pF
L1
18nH
C2
1000pF
C3
1000pF
RF IN RF OUT
(
To
p
View
)
VDD=2.7V
1 Pin INDEX
(Top View)
RF
Input RF
Output
VDD
L4
L
L
C2
C1
C3
L
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z0=50ohm)
PCB SIZE=14.0mmX14.0mm
NJG1107HA8
- 8 -
QPACKAGE OUTLINE (USB6-A8)
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this
p
roduct,
p
lease obe
y
the relatin
g
law of
y
ou
r
countr
y
.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these dama
g
es.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
Photo resist coating
TERMINAL TREAT :Au
Substrate :FR5
Molding material :Epoxy resin
UNIT :mm
WEIGHT :1.1mg
0.2 (MIN0.15)
1.2±0.05
0.8
0.4
0.2±0.04
6
R0.05
5
1
4
2
3
0.4
1.0
±
0.05
0.2
±
0.07
0.2±0.04
0.6
0.1
±
0.05
C0.1
0.38±0.06
0.038-0.009
+0.012
S
0.03
S
