ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 3300
V
IC = 250
A
Doc. No. 5SYA 1406-00 Aug 10
• Ultra low loss, rugged SPT+ chip-set
• Smooth switching SPT+ chip-set for
good EMC
• High insulation package
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 3300
V
DC collector current IC Tc = 80 °C 250 A
Peak collector current ICM tp = 1 ms, Tc = 80 °C 500 A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Tc = 25 °C, per switch (IGBT) 1950
W
DC forward current IF 250 A
Peak forward current IFRM 500 A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 2300
A
IGBT short circuit SOA tpsc VCC = 2500 V, VCEM CHIP ≤ 3300 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Isolation voltage Visol RMS, 1 min, f = 50 Hz 6000
V
Junction temperature Tvj 125 °C
Junction operating temperature Tvj(op) -40 125 °C
Case temperature Tc -40 125 °C
Storage temperature Tstg -40 125 °C
Ms Base-heatsink, M6 screws 4 6
Mounting torques 2) Mt1 Main terminals, M6 screws 4 6 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB HiPak
TM
IGBT Module
5SNG 0250P330300
5SNG 0250P330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1406-00 Aug 10 page 2 of 9
IGBT characteristic values 3)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 10 mA, Tvj = 25 °C 3300
V
Tvj = 25 °C 2.4 V
Collector-emitter 4)
saturation voltage VCE sat IC = 250 A, VGE = 15 V Tvj = 125 °C 3.0 V
Tvj = 25 °C 2 mA
Collector cut-off current ICES VCE = 3300 V, VGE = 0 V Tvj = 125 °C 6 20 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 40 mA, VCE = VGE, Tvj = 25 °C 5 7 V
Gate charge Qge IC = 250 A, VCE = 1800 V,
VGE = -15 V .. 15 V 1830
nC
Input capacitance Cies 25.3
Output capacitance Coes 2.03
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 0.63 nF
Tvj = 25 °C 400
Turn-on delay time td(on) Tvj = 125 °C 400 ns
Tvj = 25 °C 180
Rise time tr
VCC = 1800 V,
IC = 250 A,
RG = 10 Ω,
VGE = ±15 V,
Lσ = 400 nH, inductive load
Tvj = 125 °C 195 ns
Tvj = 25 °C 1160
Turn-off delay time td(off) Tvj = 125 °C 1330
ns
Tvj = 25 °C 270
Fall time tf
VCC = 1800 V,
IC = 250 A,
RG = 10 Ω,
VGE = ±15 V,
Lσ = 400 nH, inductive load
Tvj = 125 °C 390 ns
Tvj = 25 °C 330
Turn-on switching energy Eon VCC = 1800 V, IC = 250 A,
VGE = ±15 V, RG = 10 Ω,
Lσ = 400 nH, inductive load
Tvj = 125 °C 425 mJ
Tvj = 25 °C 330
Turn-off switching energy Eoff VCC = 1800 V, IC = 250 A,
VGE = ±15 V, RG = 10 Ω,
Lσ = 400 nH, inductive load
Tvj = 125 °C 450 mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 2500 V, VCEM CHIP ≤ 3300 V 1090
A
Module stray inductance Lσ DC between C1 – E2 125 nH
TC = 25 °C 0.78
Resistance, terminal-chip RCC’+EE’ between C1 – E2 TC = 125 °C 1.03 mΩ
3) Characteristic values according to IEC 60747 – 9
4) Collector-emitter saturation voltage is given at chip level
5SNG 0250P330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1406-00 Aug 10 page 3 of 9
Diode characteristic values 5)
Parameter Symbol Conditions min typ max
Unit
Tvj = 25 °C 2
Forward voltage 6) VF IF = 250 A Tvj = 125 °C 2.1 V
Tvj = 25 °C 300
Reverse recovery current Irr Tvj = 125 °C 330 A
Tvj = 25 °C 155
Recovered charge Qrr Tvj = 125 °C 250 µC
Tvj = 25 °C 730
Reverse recovery time trr Tvj = 125 °C 1260
ns
Tvj = 25 °C 165
Reverse recovery energy Erec
VCC = 1800 V,
IF = 250 A,
VGE = ±15 V,
RG = 10 Ω
Lσ = 400 nH
inductive load
Tvj = 125 °C 280 mJ
5) Characteristic values according to IEC 60747 – 2
6) Forward voltage is given at chip level
Package properties 7)
Parameter Symbol Conditions min typ max
Unit
IGBT thermal resistance
junction to case Rth(j-c)IGBT 0.052
K/W
Diode thermal resistance
junction to case Rth(j-c)DIODE
0.100
K/W
IGBT thermal resistance 2)
case to heatsink Rth(c-s)IGBT
IGBT per switch, λ grease = 1W/m x K 0.048
K/W
Diode thermal resistance 7)
case to heatsink Rth(c-s)DIODE
Diode per switch, λ grease = 1W/m x K 0.096
K/W
Partial discharge extinction
voltage Ve f = 50 Hz, QPD ≤ 10pC (acc. to IEC 61287)
3500
V
Comparative tracking index CTI ≥ 600
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties 7)
Parameter Symbol Conditions min typ max
Unit
Dimensions L x W x H
Typical , see outline drawing 73 x 140 x 48 mm
Term. to base:
35
Clearance distance in air da according to IEC 60664-1
and EN 50124-1 Term. to term:
19 mm
Term. to base:
64
C1 to E1: 54
Surface creepage distance ds according to IEC 60664-1
and EN 50124-1 C1 to E2: 78 mm
Mass m 620 g
7) Package and mechanical properties according to IEC 60747 – 15
5SNG 0250P330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1406-00 Aug 10 page 4 of 9
Electrical configuration
Outline drawing 2)
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
5SNG 0250P330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1406-00 Aug 10 page 5 of 9
0
50
100
150
200
250
300
350
400
450
500
0 1 2 3 4 5
VCE [V]
IC [A]
25 °C
125 °C
VGE = 15V
0
100
200
300
400
500
012345678910111213
VGE [V]
IC [A]
25 °C
125 °C
VCE = 20 V
Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level
0
50
100
150
200
250
300
350
400
450
500
0 1 2 3 4 5
VCE [V]
IC [A]
Tvj = 25 °C
9V
11V
13V
15V
17V
0
50
100
150
200
250
300
350
400
450
500
0 1 2 3 4 5 6
VCE [V]
IC [A]
Tvj = 125 °C
9V
11V
13V
15V
17V
Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level
5SNG 0250P330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1406-00 Aug 10 page 6 of 9
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0100 200 300 400 500
IC [A]
Eon, Eoff [J]
VCC = 1800 V
RG = 10 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 400 nH Eon
Eoff
E
sw
[J] = 1.94 x 10
-6
x I
C2
+2.61 x 10
-3
x I
C
+0.101
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
020 40 60 80
RG [ohm]
Eon, Eoff [J]
VCC = 1800 V
RG = 10 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 400 nH Eon
Eoff
Fig. 5 Typical switching energies per pulse
vs collector current Fig. 6 Typical switching energies per pulse
vs gate resistor
0.01
0.1
1
10
0 100 200 300 400 500
IC [A]
td(on), tr, td(off), tf [µs]
VCC = 1800 V
RG = 10 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 400 nH
td(on)
td(off)
tr
tf
0.1
1
10
010 20 30 40 50 60 70
RG [ohm]
td(on), tr, td(off), tf [µs]
VCC = 1800 V
RG = 10 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 400 nH
td(off)
td(on)
tr
tf
Fig. 7 Typical switching times
vs collector current Fig. 8 Typical switching times
vs gate resistor
5SNG 0250P330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1406-00 Aug 10 page 7 of 9
0.1
1
10
100
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
Cies
Coes
Cres
VGE = 0V
fOSC = 1 MHz
VOSC = 50 mV
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0
Qg [µC]
VGE [V]
VCC = 2500 V
IC = 250 A
Tvj = 25 °C
VCC = 1800 V
Fig. 9 Typical capacitances
vs collector-emitter voltage Fig. 10 Typical gate charge characteristics
0
0.5
1
1.5
2
2.5
0500 1000 1500 2000 2500 3000 3500
VCE [V]
ICpulse / IC
Chip
Module
VCC ≤ 2500 V, Tvj = 125 °C
VGE = ±15 V, RG = 10 ohm
Fig. 11 Turn-off safe operating area (RBSOA)
5SNG 0250P330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1406-00 Aug 10 page 8 of 9
0
50
100
150
200
250
300
350
400
0 100 200 300 400 500
IF [A]
Erec [mJ], Irr [A], Qrr [µC]
VCC = 1800 V
RG = 10 ohm
Tvj = 125 °C
Lσ = 400 nH
Erec
Irr
Qrr
0
100
200
300
400
500
600
0500 1000 1500 2000 2500
di/dt [kA/µs]
Erec [mJ], Qrr [µC]
VCC = 1800 V
RG = 10 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 400 nH
Erec
Qrr
Irr
R
G
= 3.3 ohm
R
G
= 4.7 ohm
R
G
= 10 ohm
R
G
= 15 ohm
R
G
= 22 ohm
R
G
= 33 ohm
R
G
= 47 ohm
R
G
= 68 ohm
Fig. 12 Typical reverse recovery characteristics
vs forward current Fig. 13 Typical reverse recovery characteristics
vs di/dt
0
100
200
300
400
500
00.511.5 2 2.5 3
VF [V]
IF [A]
25 °C
125 °C
0
50
100
150
200
250
300
350
400
450
500
0 1000 2000 3000 4000
VR [V]
IR [A]
VCC ≤ 2500 V
di/dt ≤ 2500 A/µs
Tvj = 125 °C
Lσ ≤ 400 nH
Fig. 14 Typical diode forward characteristics,
chip level Fig. 15 Safe operating area diode (SOA)
5SNG 0250P330300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA 1406-00 Aug 10
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ic)-(jth ∑
=
i
τ
i 1 2 3 4 5
Ri(K/kW) 35.1 8.25 3.85 3.79
IGBT
τi(ms) 207.4 30.1 7.6 1.6
Ri(K/kW) 69.2 17.3 7.79 7.77
DIODE
τi(ms) 203.6 30.1 7.5 1.6
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
t [s]
Zth(j-c) [K/ W ] IGBT, DIODE
Zth(j-c) IGBT
Zth(j-c) Diode
Fig. 16 Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043 Load – cycle capability of HiPaks
• 5SYA 2045 Thermal runaway during blocking
• 5SYA 2058 Surge currents for IGBT diodes
• 5SZK 9120 Specification of environmental class for HiPak
