Absolute Maximum Ratings
Parameter Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -32
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -20
IDM Pulsed Drain Current À-128
PD @ TC = 25°C Max. Power Dissipation 208 W
Linear Derating Factor 1.67 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy Á354 mJ
IAR Avalanche Current À-32 A
EAR Repetitive Avalanche Energy À25 mJ
dv/dt Peak Diode Recovery dv/dt  -4.1 V/ns
TJOperating Junction -55 to 150
TSTG Storage Temperature Range
Lead Temperature 300 (0.063in./1.6mm from case for 10s)
Weight 9.3 ( Typical ) g
Pre-Irradiation
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
oC
A
RADIATION HARDENED
IRHMS597260
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
04/20/05
www.irf.com 1
200V, P-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) ID
IRHMS597260 100K Rads (Si) 0.103Ω -32A
IRHMS593260 300K Rads (Si) 0.103Ω -32A
For footnotes refer to the last page
55
Low-Ohmic
TO-254AA
PD-94605A
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
IRHMS597260 Pre-Irradiation
2www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ISContinuous Source Current (Body Diode) — — -32
ISM Pulse Source Current (Body Diode) À— — -128
VSD Diode Forward Voltage — — -5.0 V Tj = 25°C, IS = -32A, VGS = 0V Ã
trr Reverse Recovery Time — — 300 ns Tj = 25°C, IF =-32A, di/dt ≤ -100A/µs
QRR Reverse Recovery Charge — — 6.0 µCV
DD ≤ -50V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 — — V VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJTemperature Coefficient of Breakdown — -0.25 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.103 ΩVGS = -12V, ID = -20A
Resistance
VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -1.0mA
gfs Forward Transconductance 23 — — S ( ) VDS > -15V, IDS = -20A Ã
IDSS Zero Gate Voltage Drain Current — — -10 VDS= -160V ,VGS=0V
— — -25 VDS = -160V,
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V
IGSS Gate-to-Source Leakage Reverse — — 100 VGS = 20V
QgTotal Gate Charge — — 175 VGS =-12V, ID = -32A
Qgs Gate-to-Source Charge — — 75 nC VDS = -100V
Qgd Gate-to-Drain (‘Miller’) Charge — — 70
td(on) Turn-On Delay Time — — 35 VDD = -100V, ID = -32A
trRise Time — — 50 VGS =-12V, RG = 2.35Ω
td(off) Turn-Off Delay Time — — 75
tfFall Time — — 100
LS + LDTotal Inductance — 4.0 — Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss Input Capacitance — 7170 — VGS = 0V, VDS = -25V
Coss Output Capacitance — 920 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 86 —
nA
Ω
Ã
nH
ns
µA
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 0.6
RthCS Case-to-Sink — 0.21 — °C/W
RthJA Junction-to-Ambient — — 48 Typical socket mount
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Pre-Irradiation IRHMS597260
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter 100K Rads(Si)1 300KRads(Si)2
Units
Test Conditions
Min Max Min Max
BVDSS Drain-to-Source Breakdown Voltage -200 — -200 — V VGS = 0V, ID = -1.0mA
VGS(th) Gate Threshold Voltage -2.0 -4.0 -2.0 -5.0 VGS = VDS, ID = -1.0mA
IGSS Gate-to-Source Leakage Forward — -100 — -100 nA VGS =-20V
IGSS Gate-to-Source Leakage Reverse — 100 — 100 VGS = 20 V
IDSS Zero Gate Voltage Drain Current — -10 — -10 µA VDS = -160V, VGS =0V
RDS(on) Static Drain-to-Source à — 0.103 — 0.103 Ω VGS = -12V, ID =-20A
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source On-State — 0.103 — 0.103 Ω VGS = -12V, ID =-20A
Resistance(Low-OhmicTO-254AA)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHMS597260
2. Part number IRHMS593260
Fig a. Single Event Effect, Safe Operating Area
VSD Diode Forward Voltage à — -5.0 — -5.0 V VGS = 0V, IS = -32A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Ã
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range VDS (V)
(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V
Br 37.3 285 36.8 - 200 - 200 - 200 - 200 -75
I 59.9 345 32.7 - 200 - 200 - 200 - 50 —
Au 82.3 357 28.5 - 200 - 200 - 200 - 35 —
-250
-200
-150
-100
-50
0
0 5 10 15 20
VGS
VDS
Br
I
Au
IRHMS597260 Pre-Irradiation
4www.irf.com
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
15
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-12V
-32A
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
1
10
100
1000
-ID, Drain-to-Source Current (A)
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-5.0V
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
1
10
100
1000
-ID, Drain-to-Source Current (A)
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP -15V
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
BOTTOM -5.0V
-5.0V
55.566.577.58
-VGS, Gate-to-Source Voltage (V)
10
100
1000
-ID, Drain-to-Source Current (Α)
VDS = -50V
20µs PULSE WIDTH
TJ = 150°C
TJ = 25°C
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Pre-Irradiation IRHMS597260
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
1
10
100
1000
-ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
110 100
-VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS
= 0V, f = 1 MHZ
Ciss
= C
gs
+ C
gd, C
ds
SHORTED
Crss
= C
gd
Coss
= C
ds
+ C
gd
0 20 40 60 80 100 120
QG Total Gate Charge (nC)
0
4
8
12
16
-VGS, Gate-to-Source Voltage (V)
VDS= -160V
VDS= -100V
VDS= -40V
ID= -32A
0.5 1.5 2.5 3.5 4.5 5.5 6.5
-VSD , Source-to-Drain Voltage (V)
0.1
1
10
100
1000
-ISD , Reverse Drain Current (Α)
VGS = 0V
TJ = 150°C
TJ = 25°C
IRHMS597260 Pre-Irradiation
6www.irf.com
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
5
10
15
20
25
30
35
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
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Pre-Irradiation IRHMS597260
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
QG
QGS QGD
VG
Charge
-12 V
D.U.T. VDS
ID
IG
-3mA
VGS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
-12V
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
tp
V
(
BR
)
DSS
I
AS
VGS
VDD
+
-
25 50 75 100 125 150
0
200
400
600
800
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-14.3A
-20.2A
-32A
IRHMS597260 Pre-Irradiation
8www.irf.com
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -25V, starting TJ = 25°C, L=0.7mH
Peak IL = -32A, VGS = -12V
 ISD ≤ -32A, di/dt ≤ -220A/µs,
VDD ≤ -200V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — Low-Omic TO-254AA
3.81 [.150]
0.12 [.005]
1.27 [.050]
1.02 [.040]
6.60 [.260]
6.32 [.249]
C14.48 [.570]
12.95 [.510]
3X
0.36 [.014] B A
1.14 [.045]
0.89 [.035]
2X
3.81 [.150]
20.32 [.800]
20.07 [.790]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
17.40 [.685]
16.89 [.665]
A
123
13.84 [.545]
13.59 [.535]
0.84 [.033]
MAX.
B
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
3. CONTROLLING DIMENSION: INCH.
NOT E S :
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2005
