MADS-002501-1290LP - M/A-COM Technology Solutions

SURMOUNT Low Barrier

0201 Silicon Schottky Diode

Rev. V3

MA4E2501L-1290

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Features

 Extremely Low Parasitic Capacitance and Induc-

tance.

 Extremely Small 0201 (600x300um) Footprint

 Surface Mountable in Microwave Circuits. No

Wire bonds Required.

 Rugged HMIC Construction with Polyimide

Scratch Protection

 Reliable, Multilayer Metalization with a Diffusion

Barrier, 100% Stabilization Bake (300°C, 16

hours)

 Available in Pocket Tape and Reel

Description and Applications

The MA4E2501L-1290 SURMOUNT Diodes are Silicon

Low Barrier Schottky Devices fabricated with the pat-

ented Heterolithic Microwave Integrated Circuit (HMIC)

process. HMIC circuits consist of Silicon pedestals which

form diodes or via conductors embedded in a glass dielec-

tric, which acts as the low dispersion, microstrip transmis-

sion medium. The combination of silicon and glass allows

HMIC devices to have excellent loss and power dissipa-

tion characteristics in a low profile, reliable device.

The Surmount Schottky devices are excellent choices for

circuits requiring the small parasitics of a beam lead de-

vice coupled with the superior mechanical performance of

a chip. The SURMOUNT structure employs very low

resistance silicon vias to connect the Schottky contacts to

the metalized mounting pads on the bottom surface of the

chip. These devices are reliable, repeatable, and a lower

cost performance solution to conventional devices.

The multi-layer metalization employed in the fabrication

of the Surmount Schottky junctions includes a platinum

diffusion barrier, which permits all devices to be sub-

jected to a 16-hour non-operating stabilization bake at

300°C.

The extremely small “ 0201 ” outline allows for Surface

Mount placement and multi-functional polarity orienta-

tions.

Cathode Anode

dim. in mm

min. max. min. max.

A 0.023 0.025 0.575 0.625

B 0.011 0.013 0.275 0.325

C 0.004 0.008 0.102 0.203

D 0.006 0.008 0.150 0.200

E 0.007 0.009 0.175 0.225

F 0.006 0.008 0.150 0.200

G 0.009 0.011 0.220 0.270

Chip Dimensions

The MA4E2501L-1290 SURMOUNT Low Barrier

Schottky diode is recommended for use in microwave

circuits through Ku band frequencies for lower power

applications such as mixers, sub-harmonic mixers, detec-

tors and limiters

SURMOUNT Low Barrier

0201 Silicon Schottky Diode

Rev. V3

MA4E2501L-1290

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Electrical Specifications @ + 25 °C

Parameters and Test Conditions Symbol Units

Min. Typ. Max.

Total Capacitance at 0V at 1 MHz Ct pF 0.10 0.12

Dynamic Resistance at 9.5 - 10.5mA Rd Ohms 10 14

Forward Voltage at +1mA Vf Volts .300 .330

Reverse Breakdown Voltage at -10uA Vb Volts 3.0 5

Absolute Maximum Ratings 1

Parameter Absolute Maximum

Operating Temperature -40 °C to +150 °C

Storage Temperature -40 °C to +150 °C

Forward Current 20 mA

Reverse Voltage 5 volts.

RF CW Incident Power + 20 dBm

RF+DC Dissipated Power 50 mW

Electrostatic Discharge ( ESD ) Classification 2 Class 0

1. Operation of this device above any one of these parameters may cause permanent damage.

2. Human Body Model

Ordering Information

Part Number Package Standard Quantity

MA4E2501L-1290 Die in Carrier 100

MADS-002501-1290LP Pocket Tape and Reel 3000

SURMOUNT Low Barrier

0201 Silicon Schottky Diode

Rev. V3

MA4E2501L-1290

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

Die Bonding

Die attach for these devices is made simple through the use of surface mount die attach technology. Mounting

pads are conveniently located on the bottom surface of these devices, and are opposite the active junction. The

devices are well suited for high temperature solder attachment onto hard substrates. 80Au/20Sn and

Sn63/Pb37 solders are acceptable for usage. Die attach with electrically conductive silver epoxy is not

recommended.

For hard substrates, we recommend using a vacuum tip and a force of 60 to100 grams applied uniformly to the

top surface of the device using a hot gas bonder with equal heat applied across the bottom mounting pads of the

device. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board

mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Re-

flow the paste by applying equal heat to the circuit at both die mounting pads. The solder joint must not be made

one at a time creating unequal heat flow and thermal stress. Solder reflow should not be performed by causing

heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting

pads can be visually inspected through the die after die attach is completed. Reference M/A-Com application

note M538 which can be found @ www.macomtech.com for additional surface mounting information.

Handling Procedures

The following precautions should be observed to avoid damaging these chips:

Cleanliness: The chips should be handled in a clean environment.

Do not attempt to clean die after installation.

Static Sensitivity: Schottky barrier diodes are ESD sensitive and can be damaged by static

electricity. Proper ESD techniques should be used when handling these devices.

General Handling: The protective polymer coating on the active areas of these die provides scratch

protection, particularly for the metal air bridge which contacts the anode. The use of

plastic tipped tweezers or vacuum pickups is strongly recommended. These die are

also suitable for automatic pick and place equipment.

SURMOUNT Low Barrier

0201 Silicon Schottky Diode

Rev. V3

MA4E2501L-1290

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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