OPTICAL COMMUNICATIONS C-Band, L-Band, Pass-Band Low-Leakage PIN Photodiodes EPM 6xx Series Key Features * Electro-optical - Low back reflection - High responsivity in L-band at 1625 nm (EPM 606) * Packaging - Single-mode 900 m fiber with or without a connector - Single-mode 250 m fiber without a connector - SFF package also available Applications * C- and L-Band monitoring * High-sensitivity monitoring * EDFA and DWDM * 40 and 10 G line monitoring * 980 forward pump * 1310 and 1550 nm PONs The JDSU EPM 6xx-Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in our wafer fab and assembled into a hermetically-sealed package with antireflective-coated lens. A stainless steel bushing is used to actively couple the fiber to the package. The fiber is reinforced with a rubber boot to relieve fiber-bending stresses. EPM 6xx-Series photodiodes can be produced with a variety of industry-standard connectors, or no connector at all. They are also available with mounting brackets for both vertical panel and horizontal flush-to-board mounting. Low-leakage versions (EPM 605LL and EPM 606LL) of the EPM 605 and EPM 606 are available with the same features, connectors, and brackets. Small form-factor (SFF) packages EPM635 and EPM635-75 are designed for SFF applications. north america : 800 498-JDSU (5378) worldwide : +800 5378-JDSU website : www.jdsu.com C-BAND, L-BAND, PASS-BAND LOW-LEAKAGE PIN PHOTODIODES 2 Application Preference Application/Product EPM 605 EPM 605LL EPM 606 EPM 606LL EPM 613 EPM 650 C-band ** ** * * * C-band, high sensitivity ** * L-band ** ** L-band, low sensitivity ** 1310 nm band * *** ** EDFA ** ** ** ** * DWDM ** ** ** ** * 40 G and 10 G line monitors ** ** ** ** * 980 forward pump * * * * ** 1310/1550 nm PON networks * * * * ** * 1480 nm pump monitors * * * * * ** * Strong Preference Preference Typical Spectral Response (23C) Dark Current vs. Reverse Bias Typical Spectral Response 23C Dark Current vs. Reverse Bias 1E-07 1.0 1E-08 Dark Current (A) Responsivity (A/W) 0.8 0.6 0.4 1E-09 85C 1E-10 0.2 65C 45C 25C 0.0 800 1000 1200 1400 Wavelength (nm) 1600 1800 1E-11 0 5 10 15 Reverse Voltage (V) 20 25 C-BAND, L-BAND, PASS-BAND LOW-LEAKAGE PIN PHOTODIODES 3 Capacitance vs. Reverse Bias (23C) (EPM 605/606) Optical Response Nonlinearity (Typical, -5 V bias) Optical Response Nonlinearity Typical, -5V bias 1.4 6% 1.2 4% 2% Nonlinearity (%) Capacitance (pF) Capacitance vs. Reverse Bias 23C 1.0 0.8 0.6 0% -2% -4% 0.4 -6% 0.2 -8% -10% 0.0 0 2 4 6 8 10 0.1 0.01 12 Responsivity vs. Temperature PDL vs. Temperature 0.1 0.66 Responsivity (A/W) 0.12 0.7 0.08 0.06 EPM 613 0.04 0.62 0.58 EPM 613 Device 1 Power = 1 mW 0.54 EPM 613 = 980 nm Bias = -5V EPM 613 Device 2 = 980 nm EPM 613 Device 3 0.5 0.02 20 25 30 35 40 45 50 0 65 60 55 20 10 30 PDL vs. Temperature 0.08 1 Responsivity (A/W) 1.2 0.06 0.04 Sample 1 Sample 2 90 80 Sample 1 0.6 Sample 2 Sample 3 0.4 Sample 4 = 1620 nm, Vb = -5V, Pin = 0.5 mW 0 20 70 0.8 = 1620 nm 10 60 Responsivity vs. Temperature 0.1 0 50 Responsivity vs. Temperature (EPM 606) PDL vs. Temperature (EPM 606) 0.02 40 Temperature (C) Temperature (C) PDL (mdB) 100 10 Responsivity vs. Temperature (EPM 613) PDL vs. Temperature (EPM 613) PDL (dB) 1 Input Optical Power (mW) Reverse Voltage (V) 0.2 30 40 Temperature (C) 50 60 70 -40 -20 0 20 40 Temperature (C) 60 80 C-BAND, L-BAND, PASS-BAND LOW-LEAKAGE PIN PHOTODIODES 4 Responsivity vs. Wavelength, Temperature (EPM 605) PDL vs. Wavelength, Temperature (EPM 605) Responsivity vs. (Wavelength, Temperature) PDL vs. (Wavelength, Temperature) 1 0.1 0.095 0.98 0.09 0.97 PDL (dB) Responsivity (A/W) 0.99 0.96 0.95 15C 23C 0.93 65C 0.92 1530 0.08 0.075 0.94 1525 0.085 1535 1540 1545 1550 1555 1560 15C 0.07 23C 0.065 65C 0.06 1565 1535 Wavelength (nm) 1540 1545 1550 1555 1560 1565 Wavelength (nm) Responsivity vs. Temperature (EPM 605) PDL vs. Temperature (EPM 605) PDL vs. Temperature Responsivity vs. Temperature 0.08 1 0.07 0.96 Responsivity (A/W) PDL (dB) 0.06 0.05 0.04 0.03 EPM 605 (1310 nm) 0.02 = 1550 nm EPM 605 (1310 nm) = 1310 nm EPM 605 (1550 nm) Sample 5 0.88 Sample 6 Sample 7 0.84 EPM 605 (1550 nm) 0.01 0.92 = 1550 nm, Vb = -5V, Pin = 0.5 mW 0.8 0 20 25 30 35 40 45 50 55 60 65 70 -40 Temperature (C) -20 0 20 40 60 Temperature (C) Equivalent Circuit for EPM 6xx-Series Rs 1.5 nH 5 nH 0.50 pF Cp 0.13 pF 1 nH CASE 0.50 pF 5 nH Model EPM 605 EPM 606 EPM 613 EPM 650 EPM 635 EPM 635-75 Rs 5 5 5 6 5 5 Cp 0.55 pF 0.55 pF 0.75 pF 1.00 pF 6.00 pF 0.90 pF 80 C-BAND, L-BAND, PASS-BAND LOW-LEAKAGE PIN PHOTODIODES 5 Dimensions Diagram Specifications in mm unless otherwise noted. EPM 6xx with Dual-Mount Bracket EPM 6xx without Dual-Mount Bracket EPM 635/EPM 635LL EPM 635-75 C-BAND, L-BAND, PASS-BAND LOW-LEAKAGE PIN PHOTODIODES 6 Specifications Temperature = 25C, V PD = -5 V and wavelength = 1550 nm, unless otherwise noted. Parameter EPM 635 EPM 635-75 Active diameter Typical 300 m 60 m Responsivity Minimum 0.85 A/W 0.85 A/W Back reflection Minimum -40 dB -40 dB Dark current Standard leakage Maximum 0.6 nA -- Low leakage Maximum 0.09 nA 0.08 nA Capacitance1 Typical 6.0 pF 0.9 pF Maximum 7.0 pF 1.4 pF Bandwidth1,2 Typical 300 MHz 2000 MHz Maximum Ratings Forward current Maximum 10 mA Reverse current Maximum 10 mA Reverse voltage Maximum 25 V Power dissipation Maximum 100 mW Operating temperature -40 to 85C Storage temperature -40 to 85C 1. Measured with leads trimmed or referenced to 3 mm length maximum. 2. -3 dB point into a 50 W load. C-BAND, L-BAND, PASS-BAND LOW-LEAKAGE PIN PHOTODIODES 7 Specifications Parameter EPM 605 EPM 606 EPM 613 EPM 650 Active diameter Typical 60 m 60 m 75 m 100 m Responsivity l = 980 nm Minimum -- -- 0.30 A/W -- l = 1310 nm Minimum 0.80 A/W -- 0.85 A/W 0.80 A/W l = 1550 nm Minimum 0.85 A/W 0.85 A/W 0.0004 A/W 0.85 A/W l = 1625 nm Minimum -- 0.80 A/W -- -- Back reflection l = 980 nm Minimum -- -- -30 dB -- l = 1310 nm Minimum -- -- -40 dB -27 dB l = 1550 nm Minimum -40 dB -- -- -- l = 1625 nm Minimum -- -40 dB -- -- Dark current Standard leakage Maximum 0.6 nA 0.6 nA 1.0 nA 1.0 nA Low leakage Maximum 0.08 nA 0.08 nA -- -- Capacitance1 Maximum 0.75 pF 0.75 pF 0.9 pF 1.25 pF Bandwidth2 Typical 2.0 GHz 2.0 GHz 1.5 GHz 1.5 GHz PDL l = 980 nm Typical -- -- 0.2 dB -- l = 1310 nm Typical 0.1 dB -- -- 0.1 dB l = 1550 nm Typical 0.1 dB 0.1 dB -- -- l = 1625 nm Typical -- 0.1 dB -- -- Isolation between bands 1310 and 1550 nm Typical -- -- 33 dB -- 980 and 1550 nm Typical -- -- 29 dB -- Maximum Ratings Forward current3 Maximum 10 mA Reverse current4 Maximum 10 mA Reverse voltage Maximum 25 V Power dissipation Maximum 100 mW Operating case temperature -40 to 85C Soldering temperature Maximum 250C Storage temperature -40 to 85C 1. Measured with case grounded. 2. -3 dB point into a 50 W load. 3. Current that may damage device under forward bias. 4. Current that may damage device under reverse bias. C-BAND, L-BAND, PASS-BAND LOW-LEAKAGE PIN PHOTODIODES Ordering information For more information on this or other products and their availability, please contact your local JDSU account manager or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at customer.service@jdsu.com. Sample: EPM 606LL-250 EPM 6 + Code 05 05LL 06 06LL 13 50 35 35LL 35-75 + Model Low back reflection, C-band PIN photodiode Low back reflection, low-leakage, C-band PIN photodiode Low back reflection, L-band PIN photodiode Low back reflection, low-leakage, L-band PIN photodiode Low back reflection, Pass-band PIN photodiode General purpose, high-responsivity PIN photodiode SFF package with 300 m detection window SFF package with 300 m detection window, low-leakage SFF package with 60 m detection window Code -250 Code FC/APC FC/SPC SC/SPC SC/APC LC/SPC + Buffer 250 m buffer 900 m bufer + Code W/DM BKT Bracket No bracket With dual-mount bracket Connector No connector FC/APC connector FC/SPC connector SC/SPC connector SC/APC connector LC/SPC connector Precautions for use Protection against electrostatic discharge (ESD) is imperative, requiring the use of grounding straps, anti-static mats, and other standard ESD protective equipment when handling or testing an InGaAs PIN or other junction photodiode. The flexible 250 m fiber coating can be mechanically stripped and provides protection for the optical fiber under normal handling conditions. Soldering temperature of the leads should not exceed 260C for longer than 10 seconds. Handle fiber pigtails with less than 10 N pull and with a bending radius greater than 1 inch. north america : 800 498-JDSU (5378) worldwide : +800 5378-JDSU website : www.jdsu.com Product specifications and descriptions in this document subject to change without notice. (c) 2012 JDS Uniphase Corporation 10143020 005 0712 EPM6XX.DS.OC.AE July 2012