OPTICAL COMMUNICATIONS
Key Features •Electro-optical
- Lowbackreflection
- HighresponsivityinL-bandat1625nm(EPM606)
•Packaging
- Single-mode900µmfiberwithorwithoutaconnector
- Single-mode250µmfiberwithoutaconnector
- SFFpackagealsoavailable
The JDSU EPM 6xx-Series PIN photodiodes are designed for optical network
monitoring applications. The photodiode die is fabricated with a proprietary
InGaAs process in our wafer fab and assembled into a hermetically-sealed
package with antireflective-coated lens. A stainless steel bushing is used to actively
couple the fiber to the package.
The fiber is reinforced with a rubber boot to relieve fiber-bending stresses. EPM
6xx-Series photodiodes can be produced with a variety of industry-standard
connectors, or no connector at all. They are also available with mounting brackets
for both vertical panel and horizontal flush-to-board mounting.
Low-leakage versions (EPM 605LL and EPM 606LL) of the EPM 605 and EPM
606 are available with the same features, connectors, and brackets.
Small form-factor (SFF) packages EPM635 and EPM635-75 are designed for SFF
applications.
Applications
•C-andL-Bandmonitoring
•High-sensitivitymonitoring
•EDFAandDWDM
•40and10Glinemonitoring
•980forwardpump
•1310and1550nmPONs
C-Band, L-Band, Pass-Band Low-Leakage PIN Photodiodes
EPM 6xx Series
north america: 800 498-JDSU (5378) webSite: www.jdsu.comworlDwiDe: +800 5378-JDSU
2
C-BAND, L-BAND, PASS-BAND
LOW-LEAKAGE PIN PHOTODIODES
Typical Spectral Response (23°C)
Application Preference
Application/Product EPM 605 EPM 605LL EPM 606 EPM 606LL EPM 613 EPM 650
C-band •• •• • • •
C-band,highsensitivity •• •
L-band •• ••
L-band, low sensitivity ••
1310nmband • • •• ••
EDFA •• •• •• •• •
DWDM •• •• •• •• •
40Gand10Glinemonitors •• •• •• •• •
980forwardpump • • • • ••
1310/1550nmPONnetworks • • • • •• •
1480nmpumpmonitors • • • • •
•• Strong Preference • Preference
0.0
0.2
0.4
0.6
0.8
1.0
Typical Spectral Response
23°C
Wavelength (nm)
800 1000 1200 1400 1600 1800
Responsivity (A/W)
Dark Current vs. Reverse Bias
Dark Current vs. Reverse Bias
Reverse Voltage (V)
Dark Current (A)
1E-07
1E-08
1E-09
1E-10
1E-11
0510 15 20 25
85°C
65°C
45°C
25°C
3
C-BAND, L-BAND, PASS-BAND
LOW-LEAKAGE PIN PHOTODIODES
Capacitance vs. Reverse Bias (23°C) (EPM 605/606) Optical Response Nonlinearity (Typical, –5 V bias)
1.4
024681012
Capacitance vs. Reverse Bias
23°C
Reverse Voltage (V)
Capacitance (pF)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Optical Response Nonlinearity
Typical, –5V bias
Input Optical Power (mW)
Nonlinearity (%)
–10%
–8%
–6%
–4%
–2%
0%
2%
4%
6%
0.01 0.1 110100
Responsivity vs. Temperature (EPM 613)
PDL vs. Temperature (EPM 613)
30
Temperature (°C)
PDL (dB)
35 40 45 50
0.02
0.04
0.06
0.08
0.1
0.12
2520
PDL vs. Temperature
55 60 65
λ = 980 nm
EPM 613
EPM 613
20
Temperature (°C)
Responsivity (A/W)
30 40 50 60
0.5
0.54
0.58
0.62
0.66
0.7
100
Responsivity vs. Temperature
70 80 90
Power = 1 mW
Bias = –5V
λ = 980 nm
EPM 613 Device 1
EPM 613 Device 2
EPM 613 Device 3
Responsivity vs. Temperature (EPM 606)
PDL vs. Temperature (EPM 606)
20
Temperature (°C)
PDL (mdB)
30 40 50 60
0
0.02
0.04
0.06
0.08
0.1
100
PDL vs. Temperature
70
λ = 1620 nm
Sample 1
Sample 2
0
Temperature (°C)
Responsivity (A/W)
20 40 60 80
0.2
0.4
0.6
0.8
1
1.2
–20–40
Responsivity vs. Temperature
λ = 1620 nm, Vb = –5V, Pin = 0.5 mW
Sample 1
Sample 2
Sample 3
Sample 4
Responsivity vs. Wavelength, Temperature (EPM 605)
4
C-BAND, L-BAND, PASS-BAND
LOW-LEAKAGE PIN PHOTODIODES
PDL vs. Wavelength, Temperature (EPM 605)
Responsivity vs. (Wavelength, Temperature)
Wavelength (nm)
Responsivity (A/W)
0.92
1525 1530 1535 15601540 1545 1550 1555 1565
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1
65°C
23°C
15°C
PDL vs. (Wavelength, Temperature)
Wavelength (nm)
PDL (dB)
0.06
1535 1540 15601545 1550 1555 1565
0.065
0.07
0.075
0.08
0.085
0.09
0.095
0.1
65°C
23°C
15°C
Responsivity vs. Temperature (EPM 605)
PDL vs. Temperature (EPM 605)
PDL vs. Temperature
Temperature (°C)
PDL (dB)
0
20 25 4530 35 40 55
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
50 60 65 70
EPM 605 (1310 nm)
EPM 605 (1310 nm)
EPM 605 (1550 nm)
EPM 605 (1550 nm)
λ = 1550 nm
λ = 1310 nm
0
Temperature (°C)
Responsivity (A/W)
20 40 60 80
0.8
0.84
0.88
0.92
0.96
1
–20–40
Responsivity vs. Temperature
λ = 1550 nm, Vb = –5V, Pin = 0.5 mW
Sample 5
Sample 6
Sample 7
Equivalent Circuit for EPM 6xx-Series
Cp0.13 pF
1 nH
1.5 nH
Rs
5 nH
5 nH
0.50 pF
0.50 pF
CASE
Model Rs Cp
EPM 605 5 Ω 0.55 pF
EPM 606 5 Ω 0.55 pF
EPM 613 5 Ω 0.75 pF
EPM 650 6 Ω 1.00 pF
EPM 635 5 Ω 6.00 pF
EPM 635-75 5 Ω 0.90 pF
5
C-BAND, L-BAND, PASS-BAND
LOW-LEAKAGE PIN PHOTODIODES
Specifications in mm unless otherwise noted.
Dimensions Diagram
EPM 6xx with Dual-Mount Bracket EPM 6xx without Dual-Mount Bracket
EPM 635/EPM 635LL EPM 635-75
6
C-BAND, L-BAND, PASS-BAND
LOW-LEAKAGE PIN PHOTODIODES
Specifications
Parameter EPM 635 EPM 635-75
Active diameter Typical 300 µm 60 µm
Responsivity Minimum 0.85A/W 0.85A/W
Backreflection Minimum −40dB −40dB
Dark current
Standard leakage Maximum 0.6 nA —
Lowleakage Maximum 0.09nA 0.08nA
Capacitance1 Typical 6.0pF 0.9pF
Maximum 7.0pF 1.4pF
Bandwidth1,2 Typical 300MHz 2000MHz
MaximumRatings
Forwardcurrent Maximum 10mA
Reversecurrent Maximum 10mA
Reversevoltage Maximum 25V
Powerdissipation Maximum 100mW
Operatingtemperature −40to85°C
Storage temperature −40to85°C
1.Measuredwithleadstrimmedorreferencedto3mmlengthmaximum.
2.−3dBpointintoa50W load.
Temperature = 25°C, V PD = –5 V and wavelength = 1550 nm, unless otherwise noted.
Specifications
7
C-BAND, L-BAND, PASS-BAND
LOW-LEAKAGE PIN PHOTODIODES
Parameter EPM 605 EPM 606 EPM 613 EPM 650
Activediameter Typical 60µm 60µm 75µm 100µm
Responsivity
l=980nm Minimum — — 0.30A/W —
l=1310nm Minimum 0.80A/W — 0.85A/W 0.80A/W
l =1550nm Minimum 0.85A/W 0.85A/W 0.0004A/W 0.85A/W
l=1625nm Minimum — 0.80A/W — —
Backreflection
l=980nm Minimum — — −30dB —
l=1310nm Minimum — — −40dB −27dB
l=1550nm Minimum −40dB — — —
l=1625nm Minimum — −40dB — —
Dark current
Standardleakage Maximum 0.6nA 0.6nA 1.0nA 1.0nA
Lowleakage Maximum 0.08nA 0.08nA — —
Capacitance1 Maximum 0.75pF 0.75pF 0.9pF 1.25pF
Bandwidth2 Typical 2.0GHz 2.0GHz 1.5GHz 1.5GHz
PDL
l =980nm Typical — — 0.2dB —
l=1310nm Typical 0.1dB — — 0.1dB
l =1550nm Typical 0.1dB 0.1dB — —
l=1625nm Typical — 0.1dB — —
Isolation between bands
1310and1550nm Typical — — 33dB —
980and1550nm Typical — — 29dB —
MaximumRatings
Forward current3 Maximum 10mA
Reverse current4 Maximum 10mA
Reversevoltage Maximum 25V
Powerdissipation Maximum 100mW
Operatingcasetemperature −40to85°C
Solderingtemperature Maximum 250°C
Storage temperature −40to85°C
1.Measuredwithcasegrounded.
2.−3dBpointintoa50W load.
3.Currentthatmaydamagedeviceunderforwardbias.
4.Currentthatmaydamagedeviceunderreversebias.
north america: 800 498-JDSU (5378) webSite: www.jdsu.comworlDwiDe: +800 5378-JDSU
Ordering information
For more information on this or other products and their availability, please contact your local JDSU account manager
or JDSU directly at 1-800-498-JDSU (5378) in North America and +800-5378-JDSU worldwide or via e-mail at
customer.service@jdsu.com.
Sample: EPM 606LL-250
C-BAND, L-BAND, PASS-BAND
LOW-LEAKAGE PIN PHOTODIODES
Precautions for use
Protection against electrostatic discharge (ESD) is imperative, requiring the use of grounding straps, anti-static mats, and
other standard ESD protective equipment when handling or testing an InGaAs PIN or other junction photodiode. The
flexible 250 µm fiber coating can be mechanically stripped and provides protection for the optical fiber under normal
handlingconditions.Solderingtemperatureoftheleadsshouldnotexceed260°Cforlongerthan10seconds.Handlefiber
pigtailswithlessthan10Npullandwithabendingradiusgreaterthan1inch.
EPM 6 + + ++
Productspecicationsanddescriptionsinthisdocumentsubjecttochangewithoutnotice.©2012JDSUniphaseCorporation101430200050712EPM6XX.DS.OC.AE  July2012
Code Buffer
-250 250 µm buffer
900 µm bufer
Code Connector
No connector
FC/APC FC/APC connector
FC/SPC FC/SPC connector
SC/SPC SC/SPC connector
SC/APC SC/APC connector
LC/SPC LC/SPC connector
Code Model
05 Low back reflection, C-band PIN photodiode
05LL Low back reflection, low-leakage, C-band PIN photodiode
06 Low back reflection, L-band PIN photodiode
06LL Low back reflection, low-leakage, L-band PIN photodiode
13 Low back reflection, Pass-band PIN photodiode
50 General purpose, high-responsivity PIN photodiode
35 SFF package with 300 µm detection window
35LL SFF package with 300 µm detection window, low-leakage
35-75 SFF package with 60 µm detection window
Code Bracket
No bracket
W/DM BKT With dual-mount bracket