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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
1
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
General Description
Features
Functional Diagram
The HMC789ST89E is a high linearity GaAs InGaP
HBT gain block MMIC operating from 0.7 to 2.8 GHz
and packaged in an industry standard SOT89 package.
Utilizing a minimum number of external components
and a single +5V supply, the amplier output IP3 can
be optimized to +45 dBm. The high output IP3 and
high gain make the HMC789ST89E ideal for use in
PA driver & pre-driver applications in Cellular/4G and
Fixed Wireless.
High Output IP3: +42 dBm
High Output P1dB: +25 dBm
High Gain: 18 dB
Single Supply: +5V
45% PAE @ +25 dBm Pout
Industry Standard SOT89 Package
Electrical Specications, TA = +25°C, Vs= +5V [1]
Typical Applications
The HMC789ST89E is ideal for:
• Cellular/4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Parameter Min. Ty p . Max. Min. Ty p . Max. Min. Ty p . Max. Units
Frequency Range 810 - 960 1710 - 1990 2420 - 2700 MHz
Gain 17 18 12 13.5 10 11 dB
Gain Variation Over Temperature 0.01 0.01 0.01 dB / °C
Input Return Loss 12 12 10 dB
Output Return Loss 20 15 10 dB
Output Power for 1dB Compression (P1dB) 21 23.5 23 25 22 24 dBm
Saturated Output Power (Psat) 25.5 27 26 dBm
Output Third Order Intercept (IP3) [2] 42 42 42 dBm
Noise Figure 3.8 3.8 3.8 dB
Supply Current (Icq) 125 150 125 150 125 150 mA
[1] Specications and data reect HMC789ST89E measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone output power of +10 dBm per tone, 1 MHz spacing.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
2
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
Input Return Loss vs.
Temperature @ 900 MHz
Output Return Loss vs.
Temperature @ 900 MHz
Broadband Gain &
Return Loss @ 900 MHz Gain vs. Temperature @ 900 MHz
P1dB vs. Temperature @ 900 MHz Psat vs. Temperature @ 900 MHz
-25
-15
-5
5
15
25
0.4 0.6 0.8 1 1.2 1.4
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
12
14
16
18
20
22
24
0.7 0.8 0.9 1 1.1
+25 C
+85 C
- 40 C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0.7 0.8 0.9 1 1.1
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
0.7 0.8 0.9 1 1.1
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
20
21
22
23
24
25
26
0.7 0.8 0.9 1 1.1
+25 C
+85 C
- 40 C
P1dB (dBm)
FREQUENCY (GHz)
22
23
24
25
26
27
28
0.7 0.8 0.9 1 1.1
+25 C
+85 C
- 40 C
Psat (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
3
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
Output IP3 vs. Temperature @ 900 MHz
Pout = 10 dBm Each Tone
Output IP3 vs.
Output Power @ 900 MHz
Noise Figure vs. Temperature @ 900 MHz
Gain, Power & IP3 vs.
Supply Voltage @ 900 MHz
Reverse Isolation vs.
Temperature @ 900 MHz
Power Compression @ 900 MHz
30
35
40
45
50
0.7 0.8 0.9 1 1.1
+25 C
+85 C
- 40 C
IP3 (dB)
FREQUENCY (GHz)
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18
+25 C
+85 C
- 40 C
IP3 (dB)
SINGLE TONE POUT (dBm)
0
2
4
6
8
0.75 0.8 0.85 0.9 0.95 1
+25 C
+85 C
- 40 C
NF (dB)
FREQUENCY (GHz)
-40
-30
-20
-10
0
0.7 0.8 0.9 1 1.1
+25 C
+85 C
- 40 C
ISOLATION (dB)
FREQUENCY (GHz)
10
20
30
40
50
4.5 5 5.5
Gain
P1dB
OIP3
GAIN (dB), P1dB (dBm), OIP3 (dBm)
SUPPLY VOLTAGE
0
10
20
30
40
50
-8 -4 0 4 8 12
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
4
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
ACPR vs. Supply Voltage @ 880 MHz
CDMA IS95, 9 Channels Forward
Input Return Loss vs.
Temperature @ 1900 MHz
Output Return Loss vs.
Temperature @ 1900 MHz
Broadband Gain &
Return Loss @ 1900 MHz Gain vs. Temperature @ 1900 MHz
-90
-80
-70
-60
-50
-40
-30
-20
0 2 4 6 8 10 12 14 16 18 20 22
ACPR (dBc)
CHANNEL POWER (dBm)
Source ACPR
CDMA IS95
Frequency: 880 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels 5V
5.5V
4.5V
-20
-10
0
10
20
1.2 1.4 1.6 1.8 2 2.2 2.4 2.6
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
10
12
14
16
1.7 1.8 1.9 2 2.1
+25 C
+85 C
- 40 C
GAIN (dB)
FREQUENCY (GHz)
-16
-12
-8
-4
0
1.7 1.8 1.9 2 2.1
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
1.7 1.8 1.9 2 2.1
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
5
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
Output IP3 vs. Temperature @ 1900 MHz
Noise Figure vs. Temperature @ 1900 MHz
Reverse Isolation vs.
Temperature @ 1900 MHz
P1dB vs. Temperature @ 1900 MHz Psat vs. Temperature @ 1900 MHz
Output IP3 vs. Output Power @ 1900 MHz
22
23
24
25
26
27
28
1.7 1.8 1.9 2 2.1
+25 C
+85 C
- 40 C
P1dB (dBm)
FREQUENCY (GHz)
24
25
26
27
28
29
30
1.7 1.8 1.9 2 2.1
+25 C
+85 C
- 40 C
Psat (dBm)
FREQUENCY (GHz)
30
35
40
45
50
1.7 1.8 1.9 2 2.1
+25 C
+85 C
- 40 C
IP3 (dB)
FREQUENCY (GHz)
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18
+25 C
+85 C
- 40 C
IP3 (dB)
SINGLE TONE POUT (dBm)
0
2
4
6
8
1.7 1.8 1.9 2 2.1
+25 C
+85 C
- 40 C
NF (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
1.7 1.8 1.9 2 2.1
+25 C
+85 C
- 40 C
ISOLATION (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
6
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
Gain, Power & IP3 vs.
Supply Voltage @ 1900 MHz
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
Power Compression @ 1900 MHz
Broadband Gain &
Return Loss @ 2600 MHz Gain vs. Temperature @ 2600 MHz
ACPR vs. Supply Voltage @ 2140 MHz
W-CDMA, 64 DPCH
10
20
30
40
50
4.5 5 5.5
Gain
P1dB
OIP3
GAIN (dB), P1dB (dBm), OIP3 (dBm)
SUPPLY VOLTAGE
0
10
20
30
40
50
-1 3 7 11 15 19
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-90
-80
-70
-60
-50
-40
-30
-20
1 3 5 7 9 11 13 15 17 19 21
ACPR (dBc)
CHANNEL POWER (dBm)
Source ACPR
CDMA 2000
Frequency: 1960 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels
5V
5.5V
4.5V
-80
-70
-60
-50
-40
-30
-20
0 2 4 6 8 10 12 14 16 18 20
ACPR (dBc)
CHANNEL POWER (dBm)
Source ACPR
W-CDMA
Frequency: 2140 MHz
Integration BW: 3.84 MHz
64 DPCH
5V
5.5V
4.5V
-20
-10
0
10
20
2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
8
9
10
11
12
13
14
2.3 2.4 2.5 2.6 2.7 2.8
+25 C
+85 C
- 40 C
GAIN (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
7
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
Output IP3 vs. Temperature @ 2600 MHz Output IP3 vs. Output Power @ 2600 MHz
Input Return Loss vs.
Temperature @ 2600 MHz
Output Return Loss vs.
Temperature @ 2600 MHz
P1dB vs. Temperature @ 2600 MHz Psat vs. Temperature @ 2600 MHz
-25
-20
-15
-10
-5
0
2.3 2.4 2.5 2.6 2.7 2.8
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
2.3 2.4 2.5 2.6 2.7 2.8
+25 C
+85 C
- 40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
22
23
24
25
26
2.3 2.4 2.5 2.6 2.7 2.8
+25 C
+85 C
- 40 C
P1dB (dBm)
FREQUENCY (GHz)
22
23
24
25
26
27
28
2.3 2.4 2.5 2.6 2.7 2.8
+25 C
+85 C
- 40 C
Psat (dBm)
FREQUENCY (GHz)
30
35
40
45
50
2.3 2.4 2.5 2.6 2.7 2.8
+25 C
+85 C
- 40 C
IP3 (dB)
FREQUENCY (GHz)
30
35
40
45
50
0 2 4 6 8 10 12 14 16 18
+25 C
+85 C
- 40 C
IP3 (dB)
SINGLE TONE POUT (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
Noise Figure vs. Temperature @ 2600 MHz
Reverse Isolation vs.
Temperature @ 2600 MHz
Power Compression @ 2600 MHz
Gain, Power & IP3 vs.
Supply Voltage @ 2600 MHz
0
2
4
6
8
2.3 2.4 2.5 2.6 2.7 2.8
+25 C
+85 C
- 40 C
NF (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
2.3 2.4 2.5 2.6 2.7 2.8
+25 C
+85 C
- 40 C
ISOLATION (dB)
FREQUENCY (GHz)
10
20
30
40
50
4.5 5 5.5
Gain
P1dB
OIP3
GAIN (dB), P1dB (dBm), OIP3 (dBm)
SUPPLY VOLTAGE
0
10
20
30
40
0 5 10 15 20
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
9
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
Outline Drawing
Part Number Package Body Material Lead Finish MSL Rating Package Marking [1]
HMC789ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H789
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reow temperature of 260 °C
Package Information
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +6.0 V
RF Input Power (RFIN)(Vs +5Vdc) +18 d Bm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 13.0 mW/°C above 85 °C) 0.85 W
Thermal Resistance
(junction to ground paddle) 77 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
10
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
Pin Descriptions
Pin Number Function Description Interface Schematic
1RFIN
This pin is DC coupled.
Off chip matching components are required.
See Application Circuit herein.
3RFOUT
RF output and DC Bias input for the amplier.
Off chip matching components are required.
See Application Circuit herein.
2, 4 GND These pins & package bottom must be connected to
RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
11
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
900 MHz Application Circuit
This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
Recommended Component Values
C1 10 pF
C2 100 pF
C3 100 pF
C4 1000 pF
C5 2.2 μF
C6 100 pF
C7 1.2 pF
L1 18 nH
L2 3.8 nH
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
12
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
900 MHz Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used
to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for 900 MHz Evaluation PCB 126222 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 2 mm DC Header
C1 10 pF Capacitor, 0402 Pkg.
C2 100 pF Capacitor, 0402 Pkg.
C3 100 pF Capacitor, 0402 Pkg.
C4 1000 pF Capacitor, 0402 Pkg.
C5 2.2 µF Capacitor, Tantalum
C6 100 pF Capacitor, 0402 Pkg.
C7 1.2 pF Capacitor, 0402 Pkg.
L1 18 nH Inductor, 0402 Pkg.
L2 3.8 nH Inductor, 0402 Pkg.
U1 HMC789ST89E Linear Amplier
PCB [2] 126220 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: FR4
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
13
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
1900 MHz Application Circuit
This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC
Applications Group for assistance in optimizing performance for your application.
Recommended Component Values
C1 2.2 pF
C2 5.0 pF
C3 100 pF
C4 1000 pF
C5 2.2 µF
C6 20 pF
C7 1.1 pF
L1 20 nH
R1 0.0 Ohm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
14
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
1900 MHz Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used
to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for 1900 MHz Evaluation PCB 126223 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 2 mm DC Header
C1 2.2 pF Capacitor, 0402 Pkg.
C2 5.0 pF Capacitor, 0402 Pkg.
C3 100 pF Capacitor, 0402 Pkg.
C4 1000 pF Capacitor, 0402 Pkg.
C5 2.2 µF Capacitor, Tantalum
C6 20 pF Capacitor, 0402 Pkg.
C7 1.1 pF Capacitor, 0402 Pkg.
L1 18 nH Inductor, 0402 Pkg.
R1 0.0 Ohm Resistor, 0402 Pkg.
U1 HMC789ST89E Linear Amplier
PCB [2] 126220 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: FR4
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
15
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
2600 MHz Application Circuit
This circuit was used to specify the performance for 2420-2700 MHz operation. Contact the HMC Applications Group
for assistance in optimizing performance for your application.
Recommended Component Values
C1 1.5 pF
C2 1.5 pF
C3 100 pF
C4 1000 pF
C5 2.2 µF
C6 20 pF
C7 0.3 pF
L1 18 nH
L2 12 nH
R1 0.0 Ohm
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
16
HMC789ST89E
v02.0314
InGaP HBT GAIN BLOCK MMIC
AMPLIFIER, 0.7 -2.8 GHz
2600 MHz Evaluation PCB
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used
to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
List of Materials for 2600 MHz Evaluation PCB 125682 [1]
Item Description
J1 - J2 PCB Mount SMA Connector
J3 2 mm DC Header
C1 1.5 pF Capacitor, 0402 Pkg.
C2 1.5 pF Capacitor, 0402 Pkg.
C3 100 pF Capacitor, 0402 Pkg.
C4 1000 pF Capacitor, 0402 Pkg.
C5 2.2 µF Capacitor, Tantalum
C6 20 pF Capacitor, 0402 Pkg.
C7 0.3 pF Capacitor, 0402 Pkg.
L1 18 nH Inductor, 0402 Pkg.
R1 0.0 Ohm Resistor, 0402 Pkg.
U1 HMC789ST89E Linear Amplier
PCB [2] 125220 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: FR4
Mouser Electronics
Authorized Distributor
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Analog Devices Inc.:
HMC789ST89E HMC789ST89ETR 125682-HMC789ST89E 126222-HMC789ST89E 126223-HMC789ST89E