TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES * Package type: leaded * Package form: TO-18 * Dimensions (in mm): 4.7 * Peak wavelength: p = 950 nm * High reliability * High radiant power * High radiant intensity * Angle of half intensity: = 5 * Low forward voltage 94 8483 * Suitable for high pulse current operation * Good spectral matching with Si photodetectors DESCRIPTION * Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC TSTS7100 is an infrared, 950 nm emitting diode in GaAs technology in a hermetically sealed TO-18 package with lens. APPLICATIONS with * Radiation source in near infrared range PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) P (nm) tr (ns) > 10 5 950 800 TSTS7100 Note Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 TSTS7100 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE VR 5 V Tcase 25 C IF 250 mA Peak forward current tp/T = 0.5, tp 100 s, Tcase 25 C IFM 500 mA Surge forward current tp 100 s IFSM 2.5 A PV 170 mW PV 500 mW Tj 100 C Tstg - 55 to + 100 C Reverse voltage Forward current Power dissipation Tcase 25 C Junction temperature Storage temperature range UNIT Thermal resistance junction/ambient leads not soldered RthJA 450 K/W Thermal resistance junction/case leads not soldered RthJC 150 K/W Note Tamb = 25 C, unless otherwise specified www.vishay.com 260 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81047 Rev. 1.8, 04-Sep-08 TSTS7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 300 R thJC 500 IF - Forward Current (mA) PV - Power Dissipation (mW) 600 400 300 200 R thJA 250 200 RthJC 150 RthJA 100 50 100 0 0 0 25 50 75 100 125 0 Tamb - Ambient Temperature (C) 12790 20 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 40 60 100 80 Tamb - Ambient Temperature (C) 94 8018 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp 20 ms VF 1.3 1.7 IF = 100 mA TKVF - 1.3 mV/K IR = 100 A V(BR) VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF Forward voltage Temperature coefficient of VF Breakdown voltage Junction capacitance MIN. UNIT V 5 V Radiant intensity IF = 100 mA, tp = 20 ms Ie Radiant power IF = 100 mA, tp 20 ms e 7 mW IF = 100 mA TKe - 0.8 %/K 5 deg Peak wavelength IF = 100 mA p 950 nm Spectral bandwidth IF = 100 mA 50 nm IF = 100 mA tr 800 ns IF = 1.5 A, tp/T = 0.01, tp 10 s tr 400 ns d 1.5 mm Temperature coefficient of e Angle of half intensity Rise time Virtual source diameter 10 50 mW/sr Note Tamb = 25 C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 C, unless otherwise specified 10 4 I F - Forward Current (mA) IF - Forward Current (A) 10 1 I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 10 3 10 2 10 1 10 0 0.5 10 -1 10 -2 94 8003 10 -1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 Fig. 3 - Pulse Forward Current vs. Pulse Duration Document Number: 81047 Rev. 1.8, 04-Sep-08 94 7996 0 1 2 3 4 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 261 TSTS7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 1.6 1.1 1.2 IF = 10 mA Ie rel; e rel VF rel - Relative Forward Voltage (V) 1.2 1.0 0.9 IF = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 Tamb - Ambient Temperature (C) 94 7990 0 - 10 0 10 100 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 1.25 e rel - Relative Radiant Power I e - Radiant Intensity (mW/sr) 100 10 1 t p /T = 0.01 , t p = 20 s 1.0 0.75 0.5 0.25 IF = 100 mA 0 900 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 9 - Relative Radiant Power vs. Wavelength 0 I e rel - Relative Radiant Intensity 1000 100 10 1 1000 950 - Wavelength (nm) 94 7994 Fig. 6 - Radiant Intensity vs. Forward Current e - Radiant Power (mW) 140 100 Fig. 8 - Rel. Radiant Intensity/Power vs. Ambient Temperature 1000 94 8001 50 T amb - Ambient Temperature (C) 94 7993 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.1 10 0 94 7977 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 7 - Radiant Power vs. Forward Current www.vishay.com 262 0.6 10 4 0.4 0.2 0 0.2 0.4 0.6 94 8019 Fig. 10 - Relative Radiant Intensity vs. Angular Displacement For technical questions, contact: emittertechsupport@vishay.com Document Number: 81047 Rev. 1.8, 04-Sep-08 TSTS7100 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs PACKAGE DIMENSIONS in millimeters C 0.15 A + 0.05 - 0.10 6.5 0.25 4.7 5.5 2.54 nom. 13.2 0.7 (2.5) Chip position 0.45 + 0.02 - 0.05 3.9 Lens 0.05 technical drawings according to DIN specifications Drawing-No.: 6.503-5002.02-4 Issue: 1; 24.08.98 14486 Document Number: 81047 Rev. 1.8, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 263 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000