Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81047
260 Rev. 1.8, 04-Sep-08
TSTS7100
Vishay Semiconductors
DESCRIPTION
TSTS7100 is an infrared, 950 nm emitting diode in GaAs
technology in a hermetically sealed TO-18 package with
lens.
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): ∅ 4.7
• Peak wavelength: λp = 950 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 5°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Radiation source in near infrared range
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8483
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)
TSTS7100 > 10 ± 5 950 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSTS7100 Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current Tcase ≤ 25 °C IF250 mA
Peak forward current tp/T = 0.5, tp ≤ 100 µs, Tcase ≤ 25 °C IFM 500 mA
Surge forward current tp ≤ 100 µs IFSM 2.5 A
Power dissipation PV170 mW
Tcase ≤ 25 °C PV500 mW
Junction temperature Tj100 °C
Storage temperature range Tstg - 55 to + 100 °C
Thermal resistance junction/ambient leads not soldered RthJA 450 K/W
Thermal resistance junction/case leads not soldered RthJC 150 K/W
Document Number: 81047 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.8, 04-Sep-08 261
TSTS7100
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs Vishay Semiconductors
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage
0
200
400
600
12790
RthJA
100
300
500
RthJC
Tamb- Ambient Temperature (°C)
50 12510075250
P - Power Dissipation (mW)
V
020406080
0
50
100
150
200
300
I - Forward Current (mA)
F
Tamb- Ambient Temperature (°C)
100
94 8018
RthJC
250
RthJA
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp ≤ 20 ms VF1.3 1.7 V
Temperature coefficient of VFIF = 100 mA TKVF - 1.3 mV/K
Breakdown voltage IR = 100 µA V(BR) 5V
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj30 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie10 50 mW/sr
Radiant power IF = 100 mA, tp ≤ 20 ms φe7mW
Temperature coefficient of φeIF = 100 mA TKφe- 0.8 %/K
Angle of half intensity ϕ± 5 deg
Peak wavelength IF = 100 mA λp950 nm
Spectral bandwidth IF = 100 mA Δλ 50 nm
Rise time IF = 100 mA tr800 ns
IF = 1.5 A, tp/T = 0.01, tp ≤ 10 µs tr400 ns
Virtual source diameter d 1.5 mm
t
p
- Pulse Duration (ms)
94 8003
10
0
10
1
10
1
10
-1
10
-1
10
0
10
2
10
-2
tp/T=0.01
I
FSM
= 2.5 A (single pause)
0.05
0.1
0.2
0.5
I - Forward Current (A)
F
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
I- Forward Current (mA)
F
43210
V
F- Forward Voltage (V)
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81047
262 Rev. 1.8, 04-Sep-08
TSTS7100
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Rel. Radiant Intensity/Power vs. Ambient Temperature
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
0.7
0.8
0.9
1.0
1.1
1.2
VF rel - Relative Forward Voltage (V)
94 7990 Tamb - Ambient Temperature (°C)
100806040200
IF = 10 mA
94 8001
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
I
F
- Forward Current (mA)
I - Radiant Intensity (mW/sr)
e
t
p
/T=0.01,t
p= 20 µs
- Radiant Power (mW)
e
IF- Forward Current (mA)
94 7977
103
101102104
100
0.1
1
10
1000
100
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1.6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
900 950
0
0.25
0.5
0.75
1.0
1.25
- Wavelength (nm)
1000
94 7994
Φe rel - Relative Radiant Power
IF = 100 mA
λ
0.4 0.2 0 0.2 0.4
I - Relative Radiant Intensity
e rel
0.6
94 8019
0.6
0.9
0.8
0°
30°
10°20°
40°
50°
60°
70°
80°
0.7
1.0
Document Number: 81047 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.8, 04-Sep-08 263
TSTS7100
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
A
2.54 nom.
5.5 ± 0.15
6.5 ± 0.25
13.2 ± 0.7
0.45 + 0.02
- 0.05
Lens
3.9 ± 0.05
4.7 + 0.05
- 0.10
Chip position
Drawing-No.: 6.503-5002.02-4
specifications
according to DIN
technical drawings
(2.5)
Issue: 1; 24.08.98
14486
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www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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