NPN LOW LEVEL TABLE 1 NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military equipments. These transistors are particularly suitable for use as Audio Frequency Amplifiers, Driver and Output Stages, Oscillators and General Purpose Switches. The devices are listed in order of decreasing Breakdown Voltages (Vcg and Vceo), decreasing Collector Current (Ic}, Power Dissipation (P;o;) etc. Max Vce(sar hee Min fy Max at at at Prot Type Vee | Vceo | Ic at Tamp | Package] Comple- le | lg | Min.{Max.! Ic le | =25C ment Vv Vv mA| V [mA | mA mA{|MHz|mA| mW ZT92 120 | 100 |1000/1.2 | 200} 20} 65) 200 | 200); 60 | 50 | 1000 | TO-39 ZT91 120 | 100 |1000}1.2 | 200} 20} 40} 120 | 200); 60] 50 | 1000 | TO-39 _ 2N2405 | 120 90 | 1000] 0.2 50; 5} 60] 200) 150) | } 1000 | TO-39 _ ZT93 120 80 |1000/0.5 | 150] 15] 40] 120}; 150) 60/50) 1000 | TO-39 2N1893 | 120 80 | 500} 1.2 50] 5] 40] 120]150) | ]| 800 | TO-39 2N2102 | 120 65 |1000}0.5 | 150! 15! 40! 120|150| 60 | 50 | 1000 | TO-39 | 2N4036 ZT88 100 80 | 500/0.2 50 751170 | 10} 200} 10) 300 | TO-18 _ ZT86 100 80 | 500)0.2 50 38| 85] 10) 200] 10] 300 | TO-18 BFX85 {| 100 60 |1000]}0.35] 150} 15] 70} | 150; 50 ) 50; 800 | TO-39 _ BFX84 { 100 60 |1000]0.35; 150} 15} 30} | 150; 50] 50; 800 | TO-39 _ BC141 | 100 60 |1000]1.0 }1000; 100] 40] 250 | 100} 50 | 50 | 3700* | TO-39 | BC161 BC140 80 40 |1000]1.0 |1000] 100} 40] 250 | 100} 50 | 50 | 3700* | TO-39 | BC160 BFY50 80 35 |1000]0.2 | 150] 15) 30) | 150] 60 | 50 800 | TO-39 2N1613 | 75 50 |1000}1.5 | 150} 15) 40] 120! 150] 60 |} 50 800 | TO-39 2N1711 | 75 50 |1000]1.5 | 150] 15] 100) 300/150) 70 | 50 | 800 | TO-39 _ ZT89 70 70 =| 500/0.2 50! 5! 75] 250| 10| 200} 10 | 300 | TO-18 | 2T189 ZT90 60 60 |1000]0.7 | 200} 20} 60; 200 | 200) 60} 50 | 1000 | TO-39 | 27211 ZT95 60 60 |1000]1.2 | 200} 20) 30; 200/350) 60 | 50 | 1000 | TO-39/ 2T211 BCY65E} 60 60 100/ 0.35] 10/0.25) 120] 460 2| 126 | 10 | 1000* | TO-18 | BCY77 2N2270 | 60 45 |1000]0.9 | 150] 15} 50} 200] 150) 60 | 50 | 1000 | TO-39 - 2794 60 45 |1000]0.7 | 200] 20) 20} | 10] 60] 50) 1000 | TO-39 | 27210 ZT83 60 45 | 500) 0.2 50 38} 85] 10; 200 | 10 300 | TO-18 | 27183 ZT84 60 45 500} 0.2 50 5] 75| 170} 10} 200 | 10 300 TO-18 } 21184 *At Tease = 45C continued MC2PNP LOW LEVEL TABLE 2 PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, industrial and Military equipments. These transistors are particularly suitable for use as Audio Frequency Amplifiers, Driver and Output Stages, Oscillators and General Purpose Switches. The devices are listed in order of decreasing Breakdown Voltages (Vcg and Vceg), decreasing Collector Currents (Ic), Power Dissipation (Po), etc. Max Vceisat) hee Min f+ Max at at at Prot Type Vcp| Veeco | Ic at Tamb |Package/ Comple- le | Ig |Min.|Max. | Ic Ie | =25C ment Vv Vv mA} V {mA }]mA mA; MHz}mA | mW 27211 90 65 | 1000)0.65/ 150) 15} 40] 120 |150| 60 | 50 | 1000 | TO-39 |ZT90/95 2N4036 | 90 65 | 1000/0.65! 150! 15| 40| 140 (150| | | 1000 | TO-39 |2N2102 27189 70 70 500] 0.2 50! 5| 75] 250 |] 10;150 | 10 | 300 | TO-18 |ZT89 BC161 60 60 | 1000/1.0 |1000} 100} 40} 250 /100| 50 | 50 | 3700* | TO-39 |BC141 BCY77 | 60 60 100)0.25] 10/0.25) 120) 460 2; 180T | 10 } 1000* | TO-18 |BCY65E 2N2605 | 60 45 30) 0.5 10}0.5 | 150} |0.5) 30 |0.5 400 TO-46 - 2N2604 | 60 45 300.5 10|0.5 | 60] |0.5/ 30 |0.5] 400 | TO-46 - ZT210 60 40 | 1000|1.4 | 150] 15 ; 20] 100 |150; 6O | 50 | 1000 | TO-39 |ZT94 2N4037 | 60 40 | 1000/1.4 | 150] 15 | 50| 250/150) | | 1000 | TO-39 |2N3053 BC177 | 50 45 200} 0.2 10|0.5 | 120] 460 2/130 | 10 | 300 ; TO-18 |BC107 BCY70 | 50 40 200/0.25| 10| 1 | 100} 10; 250 | 10 | 350 | TO-18 _ 2N1131 | 50 35 600]1.5 | 150} 15] 20) 45/150) | 600 | TO-39 |2N696 2N1132 | 50 35 600/1.5 | 150; 15) 30} 90/150) | 600 | TO-39 |2N697 27183 45 45 500] 0.4 50! 5] 38; 85 {| 10:150 | 10 | 300 | TO-18 /ZT83 21184 45 45 500] 0.4 50; 5} 75) 170 { 10/150 | 10 | 300 | TO-18 \ZT84 BCY79 | 45 45 200/0.25} 10/0.25; 120} 460 2| 1807 | 10 | 1000* | TO-18 | BCY59 BCY71 | 45 45 200}0.25; 10) 14) 100) 400 | 10) 250 | 10 | 350 | TO-18 _ 27181 45 35 500) 0.2 10| 1) 38] 162] 10/150 |} 10 | 300 |; TO-18 |ZT81 ZT182 45 35 500) 0.2 10; 1) 75| 260 | 10] 150 | 10 300 | TO-18 |ZT8&2 BC160 | 40 40 j 1000}1.0 |1000]} 100] 40) 250 | 100) 50 | 50 | 3700* | TO-39 |BC140 BCY78 | 32 32 200/0.25| 100.25) 120; 630 2] 180f | 10 | 1000* | TO-18 | BCY58 BCY72 | 30 25 | 200)0.25} 10! 1) 100) 10; 250 | 10 | 350 | TO-18 _ BC178 30 25 200} 0.2 10|}0.5 | 120; 800 2} 130 | 10 300 TO-18 |BC108 ZT180 25 25 500) 0.2 10 1]. 38] 162 | 10} 150 | 10 300 TO-18 |ZT80 27187 25 25 500] 0.2 10} 1] 75] 250] 10/150 | 10 300 | TO-18 |ZT87 27152 20 20 500} 0.2 10} 14 50) 200] 10) | 300 | TO-18 _ *At Tease = 45C [Typical MC4NPN SWITCHING TABLE 3 NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage (Vceo), decreasing Collector Current (Ic), Power Dissipation (Pio), etc. Max Vceisat} Nee f;Min {Switching Times Max at at at (Max) at Type Vceo} Ic a Package | Comple- le Ip |Min.J|Max.} Ic le | ton | tore | Ic ment V ijmA! V |[mAlmA mA|MHz|mA]| ns | ns |mA 2N3262 | 100 /1500/0.6 |1000}100} 40) |500} | | 40 {750 |1000; TO-39 ZT86 80 | 500)0.2 50} 5] 38] 85] 10) 200) 10) 50*}170*} 20] TO-18 _ 2788 80 | 500/0.2 50! 5} 75) 170] 10) 200) 10] 50*}170*} 20; TO-18 _ ZT89 70 | 500)0.2 50; 5) 75)| 250] 10] 200} 10} 50*}170*} 20) TO-18 | ZT189 2N2102 | 65 /1000}0.5 | 150) 15} 40} 120] 150) 60] 50 (note 1) TO-39 | 2N4036 BFX85 60 |1000!0.35| 150) 15) 70) ~ | 150] 50} 50; 55*}360*} 150) TO-39 - BFX84 60 |1000}0.35 | 150) 15) 30) | 150] 50; 50} 55*|360*} 150| TO-39 - BCY65E |. 60] 100/0.35; 100.25) 120) 460} 2) 125 | 10)150 {800 10| TO-18 | BCY77 2N1613 | 50 |1000/1.5 | 150) 15) 40] 120) 150) 60 50 {note 1) TO-39 - 2N2270 | 45 |1000/0.9 | 150) 15] 50| 200) 150) 60 50 (note 1) TO-39 - 2783 45 | 500)/0.2 50} 5] 38] 85] 10; 200] 10) 50*/170*| 20; TO-18 | ZT183 ZT84 45 | 500/0.2 50; 5] 75) 170]. 10} 200 | 10] 50*/170*} 20] TO-18 | ZT184 BCY59 45 | 200)0.35} 10/0.25) 120) 630) 2] 125 | 10/150 /800 10| TO-18 | BCY79 2N2218A| 40 | 800/0.3 | 150) 15} 40) 120 | 150) 250 | 20 | 35 (285 | 150) TO-39 | 2N2904A 2N2219A| 40{ 800}0.3 | 150) 15] 100] 300 | 150) 300 | 20 | 35 |285 | 150] TO-39 | 2N2905A 2N2221A{ 40] 800}0.3 | 150; 15] 40] 120 | 150) 250 | 20 | 35 /285 | 150| TO-18 | 2N2906A 2N2222A| 40} 800/0.3 | 150} 15] 100} 300 | 150/ 300 ; 20 | 35 |285 | 150) TO-18 | 2N2907A BFY50 35 11000}0.2 | 150) 15} 30}; | 150] 60 | 50; 55*|360*) 150) TO-39 _ BFX86 35 11000/0.35{ 150] 15} 70; | 150} 50 | 50] 55*/360*) 150) TO-39 _ ZT81 35 | 500/0.2 10} 2] 38! 162} 10) 200} 10) 50*/170*| 20) TO-18 | ZT181 2782 35 | 500/0.2 10} 2) 75) 250} 10) 200 | 10) 50*|/170*) 20) TO-18 | ZT182 2N3512 | 35] |0.4 | 150/7.5 | 10) |500] | | 30 } 45 | 150] TO-39 _ BCY58 32 | 200]0.35] 10/0.25} 120) 630] 2| 125 | 10|150 |800 10| TO-18 | BCY78 *Typical. Note 1 tiot = 30 ns Continued MC5PNP SWITCHING TABLE 4 SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage (Vcgq), decreasing Collector Current (Ic}, Power Dissipation (Piot), etc. Max Vce(sat) Hee f;Min [Switching Times| Max at at at (Max) at Type Veeol Ie Package| Comple- le Ig |Min.]Max.} Ic le | ton | tote | Ic ment V |[mA}] V |mAl mA mA|MHz|mA]| ns | ns }mA 27189 70 | 500/0.2 | 50] 5 | 75] 250; 10/150 | 10 ;120*|250*) 20; TO-18 ; ZT89 2N4036 ; 65 |1000/0.65| 150] 15 | 40) 140/750] | |110 |700 | 150) TO-39 | 2N2102 2N2904A| 60 | 600)0.4 | 150) 15 | 40] 120 | 150/200 | 50 | 45 {100 | 150} TO-39 | 2N2218A 2N2905A| 60 | 600/0.4 | 150] 15 | 100] 300 | 150/200 | 50 | 45 | 100 | 150| TO-39 | 2N2219A 2N2906A|} 60 | 600/0.4 | 150] 15 | 40; 120 | 150/200 | 50 | 45 | 100 | 150) TO-18 | 2N2221A 2N2907A| 60 | 60010.4 | 150} 15 | 100] 300 | 150)200 | 50 | 45 {100 | 150; TO-18 |; 2N2222A BCY77 | 60 } 100/0.25) 10|0.25) 120) 460 | 2) 180*| 10 150 {800 | 10] TO-18 | BCY65E 21183 45 | 500/0.4 | 50] 5 | 38] 85] 10/150 | 10 |120*/250*| 20| To-18 | zT83 27184 45 | 500/0.4 | 50) 57} 75; 170) 10]150 | 10 |120*|250*) 20] TO-18 | ZT84 BCY79 } 45 | 200)0.25) 10)0.25) 120) 460 | 2)180*) 10 j150 )800 | 10) TO-18 |) BCY59 2N2904 | 40 | 600/0.4 | 150) 15 | 40) 120 | 150) 200 | 50 | 45 | 100 | 150] TO-39 | 2N2218 2N2905 | 40 | 600/0.4 | 1501 15 | 100} 300 | 150] 200 | 50; 45 | 100 | 150] TO-39 | 2N2219 2N2906 | 40 | 600}0.4 | 150] 15 | 40] 120]150/200 | 50 | 45 |100 | 150| TO-18 | -2N2221 2N2907 | 40 | 600/0.4 | 150] 15 } 100; 300 | 150/200 | 50} 45 ;100 | 150} TO-18 | 2N2222 27181 35 | 500/0.2 | 10} 1] 38) 162] 10/150 | 10 |120*) 250"; 20] TO-18 | ZT81 ZT 182 35 | 500/0.2 | 10] 1 | 75] 260} 10} 150 | 10 |120*}250*| 20) TO-18 | ZT82 BCY78 | 32 | 200)0.25/ 10/0.25/ 120) 630 | 2/180*| 10 {150 |800 | 10] TO-18 | BCY58 27180 25 | 500/0.2 | 10) 1] 38; 162) 10/150 | 10 /120*|250*} 20} TO-18 | ZT80 27187 25 | 500)0.2 | 10] 1) 75} 250] 10/150 | 70 }120*;250*| 20] TO-18 | ZT87 2N2894 | 12 | 200]0.15] 10; 1 | 40} 150] 30/400 | 30} 60 | 90} 30/ TO-18 _ *Typical MC7HIGH FREQUENCY TABLE 7NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in these tables are designed for high frequency operation Amplifier and Oscillator applications. The tables should be referred to in conjunction with the RF Section which contains details of the available range of Ferranti high frequency transistors. hre fr Min. | Noise Figure |Copo Max.| RF, Po or Max, at at at at 1MHz] RF, Pg at Type | Vcs |Vceol Ic - Package Min.|Max.) Ic Ic | N | Ic] f Vcp| mW | f Vv Vi IimA mA|MHz!/mA | dB |mA|MHz| pFj V_ | or dB | MHz 2N918 | 30 | 15 | | 20 _ | K6 | 1] 60) 1.7] 10 | 15dB |} 200 | TO-72 2N2708} 35 | 20 | | 30}200| 2 | 700] 2 \<8.5| 2 | 200/ 1.5) 15 | 15dB | 200} TO-18 TABLE 7a MEDIUM POWER R.F. TRANSISTORS TO 1 WATT Suitable for drivers and general purpose RF amplifiers. Maximum Rating R.F. Performance (Minimum) Type Package Vcso Vceo Vee Pout Pg Fo Volts Volts Volts Watts dB MHz 2N3866 55 30 28.0 0.7 8.5 400 | TO-39 2N4427 40 20 12.0 1.0 10.0 175 TO-39 HIGH VOLTAGE TABLE 8 NPN SILICON PLANAR HIGH VOLTAGE (LOW CURRENT) TRANSISTORS The transistors shown in this table are designed for general applications where device voltages in excess of 100 volts are required. Max Vceisat} Nee IcBo Max at at at Prot Type Ves | Vceo} Ic at Tamb |Package|Comple- ic | Ig | Min.{Max.] Ic Veg | =25C ment Vv ViimA|V |[mA|[mA mA} pA] V mw z7T91 120 | 100 | 1000]1.2 | 200 | 20 | 40 | 120 }200|] 1 | 100} 1000 | TO-39 _ zT92 120 | 100 | 1000/1.2 | 200 | 20} 65 | 200 }200| 1 | 100) 1000 | TO-39 _ ZT93 120 | 80 |1000/0.5 ; 150 | 15] 40 | 120 |150|0.1] 80] 1000 | TO-39 2N2102 | 120 | 65 |1000|0.5 | 150 | 15 | 40 | 120 | 150] 0.1] 120; 1000 | TO-39 | 2N4036 MC10