A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/5
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 100 Ma 48 55 --- V
BVCER IC = 40 mA RBE = 150 Ω 30 40 --- V
BVCEO IC = 40 mA 25 28 ---
BVEBO IE = 10 mA 3.5 5.0 --- V
ICBO VCE = 24 V 10 --- --- mA
hFE VCE = 20 V IC = 2.0 A 15 40 100 ---
COB VCB = 25 V f = 1.0 MHz 42 50 pF
PG
IMD3
η
ηη
ηC
VCE = 25 V ICQ = 60 mA f = 860 MHz
POUT = 30 W f1 = 860.0 MHz f2 = 860.1 MHz 7.5 9.0
-35
55
--- dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
CBSL30
DESCRIPTION:
The ASI CBSL30 is agold metalized
epitaxial silicon NPN transistor , using
diffused ballast resistors for high
linearity Calss-AB operat ion for cellular
base station application.
FEATURES:
• Internal I nput Matching Net work
• PG = 7.5 dB at 30 W/960 MHz
• Omnigold™ Metalization System
• ηC = 55 % Typ.
• = Load mismatch capabilit y 20:1
MAXIMUM RATINGS
IC 7.5 A
VCBO 48V
VCEO 25 V
VEBO 3.5 V
PDISS 88 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 2.0 °C/W
PACKAGE STYLE .230 6L FLG
ORDER CODE: ASI10582
MINIMUM
inc h es / mm
.115 / 2 .92
.225 / 5 .72
.075 / 1 .91
.090 / 2 .29
.720 / 1 8.2 9
B
C
D
E
F
G
A
MAXIMUM
.085 / 2 .16
.110 / 2 .79
.730 / 1 8.5 4
.235 / 5 .97
inc h es / mm
.125 / 3 .18
H.355 / 9 .02
DIM
K
L
I
J
.004 / 0 .10
.120 / 3 .05
.230 / 5 .84
.006 / 0 .15
.130 / 3 .30
.260 / 6 .60
K
4X .025 R
.040x45°
.115
I
.125
E
.430 D
H
G F
J
C A
B
2XØ.130
L
.160 / 4 .06 .180 / 4 .57
.980 / 2 4.8 9.970 / 2 4.6 4
.355 / 9 .02 .365 / 9 .27
.365 / 9 .27
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 2/5
ERROR! REFERENCE SOURCE NOT FOUND.
Specif i cations are subj ect to change wi thout notice.
CBSL30
VSWR1 VCE = 25 V VSWR = 20:1
VCE = 25 V ± 20% VSWR = 10:1 No Degradation in
Output Device Typ.
VSWR2 VCE = 25 V ± 20% VSWR = 5:1
PIN = PIN (norm) +3 dB No Degradation in
Output Device Typ.
OVD VCE = 25 V PIN (norm) = +5 dB
VCE = 25 V ± 20% PIN (norm) = +3 dB No Degradation in
Output Device Typ.
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 3/5
ERROR! REFERENCE SOURCE NOT FOUND.
Specif i cations are subj ect to change wi thout notice.
CBSL30
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 4/5
ERROR! REFERENCE SOURCE NOT FOUND.
Specif i cations are subj ect to change wi thout notice.
CBSL30
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 5/5
ERROR! REFERENCE SOURCE NOT FOUND.
Specif i cations are subj ect to change wi thout notice.
CBSL30
