© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 5
1Publication Order Number:
MCR12DSM/D
MCR12DSM, MCR12DSN
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
•Small Size
•Passivated Die for Reliability and Uniformity
•Low Level Triggering and Holding Characteristics
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
•Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave, 50 Hz to
60 Hz) MCR12DSM
MCR12DSN
VDRM,
VRRM
600
800
V
On−State RMS Current
(180° Conduction Angles; TC = 75°C)
IT(RMS) 12 A
Average On−State Current
(180° Conduction Angles; TC = 75°C)
IT(AV) 7.6 A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 110°C)
ITSM 100 A
Circuit Fusing Consideration (t = 8.3 msec) I2t 41 A2sec
Forward Peak Gate Power
(Pulse Width ≤ 10 sec, TC = 75°C)
PGM 5.0 W
Forward Average Gate Power
(t = 8.3 msec, TC = 75°C)
PG(AV) 0.5 W
Forward Peak Gate Current
(Pulse Width ≤ 10 sec, TC = 75°C)
IGM 2.0 A
Operating Junction Temperature Range TJ−40 to 110 °C
Storage Temperature Range Tstg −40 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
SCRs
12 AMPERES RMS
600 − 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4 Anode
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
DPAK−3
CASE 369D
STYLE 4
DPAK
CASE 369C
STYLE 4
MARKING
DIAGRAMS
Y = Year
WW = Work Week
R12DSx = Device Code
x= M or N
G=Pb−Free Package
12
3
4
YWW
R1
2DSxG
1
23
4
YWW
R1
2DSxG
MCR12DSM, MCR12DSN
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,− Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Thermal Resistance − Junction−to−Ambient (Note 2)
RJC
RJA
RJA
2.2
88
80
°C/W
Maximum Lead Temperature for Soldering Purposes (Note 3) TL260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 4)
(VAK = Rated VDRM or VRRM; RGK = 1.0 K)T
J = 25°C
TJ = 110°C
IDRM,
IRRM −
−
−
−
10
500
A
ON CHARACTERISTICS
Peak Reverse Gate Blocking Voltage, (IGR = 10 A) VGRM 10 12.5 18 V
Peak Reverse Gate Blocking Current, (VGR = 10 V) IGRM − − 1.2 A
Peak Forward On−State Voltage (Note 5), (ITM = 20 A) VTM −1.3 1.9 V
Gate Trigger Current (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 )T
J = 25°C
TJ = −40°C
IGT
5.0
−
12
−
200
300
A
Gate Trigger Voltage (Continuous dc) (Note 6)
(VD = 12 V, RL = 100 )T
J = 25°C
TJ = −40°C
TJ = 110°C
VGT
0.45
−
0.2
0.65
−
−
1.0
1.5
−
V
Holding Current
(VD = 12 V, Initiating Current = 200 mA, RGK = 1 k)T
J = 25°C
TJ = −40°C
IH
0.5
−
1.0
−
6.0
10
mA
Latching Current
(VD = 12 V, IG = 2.0 mA, RGK = 1 k)T
J = 25°C
TJ = −40°C
IL
0.5
−
1.0
−
6.0
10
mA
Turn−On Time
(Source Voltage = 12 V, RS = 6.0 K, IT = 16 A(pk), RGK = 1.0 K)
(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s)
tgt
−2.0 5.0
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform, RGK = 1.0 K, TJ = 110°C)
dv/dt
2.0 10 −
V/s
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Ratings apply for negative gate voltage or RGK = 1.0 k. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
5. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
6. RGK current not included in measurement.
MCR12DSM, MCR12DSN
http://onsemi.com
3
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol Parameter
VDRM Peak Repetitive Off State Forward Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Off State Reverse Voltage
IRRM Peak Reverse Blocking Current
VTM Peak On State Voltage
IHHolding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)
180°
90°
Figure 1. Average Current Derating Figure 2. On−State Power Dissipation
8.00
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
110
105
100
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
3.0 8.00
8.0
4.0
2.0
0
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
P
95
85
1.0 2.0 3.0 1.0 2.0
6.0
10
16
°
, AVERAGE POWER DISSIPATION (WATTS)
(AV)
dc
180°
120°90°60°
= 30°
dc
120°
60°
= 30°
5.0
4.0 5.0
90
4.0
= Conduction
Angle
= Conduction
Angle
80
70
75
6.0 7.0
12
14
6.0 7.0
MCR12DSM, MCR12DSN
http://onsemi.com
4
Figure 3. On−State Characteristics Figure 4. Transient Thermal Response
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
5.00
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.00.1
1.0
0.1
0.01
4.0
-25 20-40
TJ, JUNCTION TEMPERATURE (°C)
1000
10
TJ, JUNCTION TEMPERATURE (°C)
-25 65-40
0.1
205.0
I
r(t), TRANSIENT THERMAL RESISTANCE
1.0 3.0 10 100 1000 10 K
, GATE TRIGGER CURRENT ( A)IGT
50 11065 5.0 11035 50
VGT, GATE TRIGGER VOLTAGE (VOLTS)
, INSTANTANEOUS ON-STATE CURRENT (AMPS)
T
80
TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 25°C
MAXIMUM @ TJ = 110°C
ZJC(t) = RJC(t)Sr(t)
1.0
1.0
2.0
-10 35 95
100
-10 9580
(NORMALIZED)
GATE OPEN
RGK = 1.0 K
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
65 110-40
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
IH, HOLDING CURRENT (mA)
I
1.0
0.1
-25 5.0 20 50 95
, LATCHING CURRENT (mA)
L
10
-10 35 80
RGK = 1.0 K
65 110-40
1.0
0.1
-25 5.0 20 50 95
10
-10 35 80
RGK = 1.0 K
MCR12DSM, MCR12DSN
http://onsemi.com
5
Figure 9. Holding Current versus
Gate−Cathode Resistance
1000 10 K100
RGK, GATE-CATHODE RESISTANCE (OHMS)
10
6.0
4.0
2.0
0
I
TJ = 25°C
Figure 10. Exponential Static dv/dt versus
Gate−Cathode Resistance and Junction
Temperature
100
RGK, GATE-CATHODE RESISTANCE (OHMS)
1000
10
1.0
STATIC dv/dt (V/ s)
TJ = 110°C
1000
IGT = 10 A
Figure 11. Exponential Static dv/dt versus
Gate−Cathode Resistance and Peak Voltage
STATIC dv/dt (V/ s)
Figure 12. Exponential Static dv/dt versus
Gate−Cathode Resistance and Gate Trigger
Current Sensitivity
8.0
IGT = 25 A
, HOLDING CURRENT (mA)
H
100
90°C
70°C
100
RGK, GATE-CATHODE RESISTANCE (OHMS)
1000
10
1.0
TJ = 110°C
1000
100
VPK = 800 V
600 V
400 V
100
RGK, GATE-CATHODE RESISTANCE (OHMS)
1000
10
1.0
VD = 800 V
TJ = 110°C
1000
100
IGT = 10 A
STATIC dv/dt (V/ s)
IGT = 25 A
ORDERING INFORMATION
Device Package Type Package Shipping†
MCR12DSMT4 DPAK 369C 2500 / Tape & Reel
MCR12DSMT4G DPAK
(Pb−Free)
369C 2500 / Tape & Reel
MCR12DSN−001 DPAK−3 369D 75 Units / Rail
MCR12DSN−001G DPAK−3
(Pb−Free)
369D 75 Units / Rail
MCR12DSNT4 DPAK 369C 2500 / Tape & Reel
MCR12DSNT4G DPAK
(Pb−Free)
369C 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MCR12DSM, MCR12DSN
http://onsemi.com
6
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE A
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
−T−SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.180 0.215 4.57 5.45
S0.025 0.040 0.63 1.01
U0.020 −−− 0.51 −−−
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
123
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
MCR12DSM, MCR12DSN
http://onsemi.com
7
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
G
D3 PL
M
0.13 (0.005) T
C
E
J
H
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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PUBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
MCR12DSM/D
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