a\ 1B OPTIONAL t |e CF + a / YZ wT ( SL a re SEATING Ero SURFACE TRANSISTOR a Lb GAUGE J REF, 1A, PLANE y | pete / 1 \ [Lex DIA. DIMENSIONS INCHES MILLIMETERS MIN MAX | MIN MAX A | 1409 | 1419 | 3.58 | 3.60 TR L | .0595 15 NOTES: 1. The following gauging procedure shal] be used: The use of a pin straightener prior to insertion in the gauge is permissible. The device being measured shall be inserted until its seating plane is .125 +.010 (3.18 20.25 mm) from the seating surface of the gauge. A spacer may be used to obtain the .125 (3.18 mm) distance from the gauge seat prior to force application. A force of 8 oz +.5 0Z shall then be applied parallel and symmetrical to the device's cylindrical axis. When examined visually after the force application (the force need not be removed) the seating plane of the device shall be seated against the gauge. 2. The location of the tab locator, within the limits of dimension C will be deter- mined by the tab and flange dimension of the device being checked. 3. Metric equivalents are given for general information only. FIGURE 2. Gauge for leads and tab location. 4 Supersedes page 4 of MIL-S-19500/74E of 17 October 1967.MIL SPECS IcMoooo12s oooosya 7 FV -DS-\4 MIL-S-19500/74E 17 October 19<7 SUPERSEDING _ MIL-S- 19500/74D 20 March 1964 (See 6.3) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, MEDIUM- POWER, TYPES 2N497, 2N498, 2N656, AND 2N657 This specification is mandatory for use by all Depart- ments and Agencies of the Department of Defense, 1. SCOPE 1.1 Scope. This specification covers the detail requirements for NPN, silicon, medium-power transistors. 1.2 Physical dimensions, See figure 1 (TO-5). 1.3 Maximum ratings. Py l/ Py 2/ y Types Ta= 2C|To= 28C VoBo ceo | YEBO T stg Ww Ww Vde Vde Vde c 2N497, 2N656 0.8 4 60 60 8 | -65 to +200 2N498, 2N657 0.8 4 100 100 8 | -65 to +200 1/ Derate linearly 4.6 mW/C for Ty, > 25 C, 2/ Derate linearly 23 mW/*C for Te > 25 C. 1,4 Primary electrical characteristics. (At: Ta = 25 C.) hFE hpE = [hye | Vor (sat) + Vpr+ Io = 200 mAdc | Ic = 30 mAdc | Ic = 200 mAdc j Ic = 200 mAdc Io = 50 mAde Vor = 10 Vde | Vcr = 10 Vde Vcr = 30 Vdc Ip = 40 mAdc | Vox = 10 Vde f= 10 MHz 2N497 | 2N656 | 2N497 | 2N656 | 2N498 | 2N657 | 2N498 | 2N657 ! : Min, 10 20 ; 12 30 |! 1.5 0.1 --- Max, 40 100 ' 36 90. 10.0 2.0 2.0 17 Pulsed (see 4.4.1). 2. APPLICABLE DOCUMENTS 2.1 The following documents. of the issue in effect on date of invitation for bids or request for proposal, form a part of the specification to the extent specified herein. FSC 5961 THIS DOCUMENT CONTAINS _/7__ PAGES.MIL SPECS Ich 0000125 O00054e 9 a MIL-S-19500/74E SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARDS MILITARY MIL-STD-202 - Test Methods for Electronic and Electrical Component Parts. MIL-STD-750 - Test Methods for Semiconductor Devices, (Copies of specifications, standards, drawings, and publications required by suppliers in connec- tion with specific procurement functions should be obtained from the procuring activity or as directed by the contracting officer. ) 3, REQUIREMENTS 3.1 General, Requirements shall be in accordance with MIL-S-19500, and as specified herein. 3,2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-S-19500. 3.3 Design, construction, and physical dimensions, Transistor shall be of the design, construc- tion, and physical dimensions shown on figure 1. 3.3.1 Lead material and finish, Lead material and finish shall be gold-plated Kovar, (Leads may be tin-coated if specified in the contract or order and it shall not be construed as adversely affecting the Qualified-product status of the device, or applicable JAN marking (see 6. 2). 3.3.2 Terminal-lead length. Terminal-lead length (s) other than that specified on figure 1 may be furnished under contract or order (see 6, 2) where the devices covered herein are required directly for particular equipment- circuit installation or for automatic-assembly-technique pro- grams, Where other lead lengths are required and provided, it shall not be construed as adversely affecting the Qualified-product status of the device, or applicable JAN marking (see 6, 2). 3,4 Performance characteristics, Performance characteristics shall be as specified in tables I, QO, and Ii. 3.5 Marking. The following marking specified in MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer: (a) Country of origin. (b) Manufacturer's identification. 4, QUALITY ASSURANCE PROVISIONS 4,1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S- 19500, and as specified herein, - 4,2 Qualification inspection. Qualification inspection shall consist of the examinations and tests specified in tables I, II, and HI, 4.3 Quality conformance inspection. Quality conformance inspection shall consist of groups A, B, and C inspections, 4.3.1 Group A inspection. Group A inspection shall consist of the examinations and tests speci- fied in table I,NO Pon mS whore coe fs fe sp gom MIL SPECS Ic poo001e5 0000543 0 i MIL-S-19500/74E he SEATING PLANE Ce- D1 BASE 7 M C | iN COLLECTOR PF | re SEE NOTE 7) r 7 Pee Ty B A DIA 3 | ! _A | 1 a peek EMITTER aE G Lt H 007 (.18MM) RAD MAX 1 DIMENSIONS , LTR INCHES MILLIMETERS MIN | MAX | MIN | MAX | A 335 | 370 8.51 9.40 B 305 | 4335 7.75 8.51 C 240 | .260 | 6.10 | 6.60 Df} 1.500 | 1.750 | 38.10 | 44.45 | 9 E 016 | 021 Al 23 42,9 F 016} .019 wl 48 13,9 & 100 2.54 4 H 5 J 029 | .045 14 1.14 | 8 K 028 | .034 fi 086 L 6009} 125 23 3.18 Mi 1414 Nom 3.59 Nom 6 N .0707 Nom 1.80 Nom 6 TES: Metric equivalents (to the nearest .01 mm) are given for general information only and are based upon Linch = 25.4 mm. Measured in the zone beyond .250 (6.35 mm) from the seating plane. Measured in the zone .050 (1.27 mm) and .250 (6.35 mm) from the seating plane. Variations on dimension B in this zone shall not exceed .010 (.25 mm). Outline in this zone is not controlled. ; ; When measured in a gaging plane .054+.001, -.000 (1.37 +.03, -.00 mm) below the seating plane of the transistor maximum diameter leads shall be within .007 (.18 mm) of their true location relative to a maximum width tab. Smalier diameter leads shall fall within the outline of the maximum diameter lead tolerance. Figure 2 preferred measured method. The collector shall be internally connected to the case. Measured from the maximum diameter of the actual device. All 3 leads. (See 3.3.1 and 3.3.2). FIGURE 1. Physical dimensions of transistor types 2N497, 2N498, 2N656 and 2N657. (TO-5).MIL SPECS Ic goo012eS5 Oooo0544 i MIL-S-19500/74E GAGE OUTLINE H- iB OPTIONAL \ | Key wi + D SEATING SURFACE TRANSISTOR ae GAGE at RELY | rh L DIA. j/, hae fp t U; re Zz E OIMENSIONS TR INCHES MILLIMETERS MIN MAX | MIN MAX A | 1409 | .1419 | 3.58 | 3.60 0 -054 6055 | 1.37 372 378 5 50 5 150 Nom 0595 | 0605 | 1.5 NOTES: 1. The following gaging procedure shall be used: The use of a pin straightener prior fo insertion in the gage 1s permissible. The device being measured shall be inserted until its seating plane is .125+.010 (3.18 +.25 mm) from the seating surface of the gage. A spacer may be used to obtain the .125 (3.18 mm) distance from the gage seat prior to force application. A force of 8 oz +.5 oz shall then be applied parallel and symmetrical to the device's cylindrical axis. When examined visually after the force application (the force need not be removed} the seating plane of the device shall be seated against the gage. 2. The location of the tab locator, within the limits of dimension C will be determined by the tab and flange dimension of the device being checked. 3. Metric equivalents (to the nearest .0] mm) are given for general information only and are based upon 1] inch = 25.4 mn. FIGURE 2. Gage for lead and tab location for transistor types 2N497, 2N498, 2N656 and 2N65/.MIL SPECS Icg goo01e5 oO00545 4 i MIL-S- 19500/74E 4.3.2 Group B inspection. Group B inspection shall consist of the examinations and tests speci- fied in table Il, 4,3.3 Group C inspection. Group C inspection shall consist of the examinations and tests speci- fied in table DI. This inspection shall be conducted on the initial lot and thereafter every 6 months during production. 4.3.4 Group B and group C life-test samples. Samples that have been subjected to group B, 340-hours life-test, may be continued on test to 1, 000 hours in order to satisfy group C life-test requirements, These samples shall be predesignated, and shall remain subjected to.the group Cc 1,000 hour acceptance evaluation after they have passed the group B, 340-hour acceptance criteria. The cumulative total of failures found during 340-hour test and during the subsequent interval up to 1, 000 hours shall be computed for 1, 000-hour acceptance criteria (see 4.3. 3). 4,4 Methods of examination and test. Methods of examination and test shall be as specified in tables I, Ii, and I. 4,4,1 Pulse measurements. Conditions for pulse measurement shalt be as specified in section 4 of MIL-STD-750. 4.4.2 Interval for end - point test measurements. End point tests shall be completed within the following time limitations aiter completion of the last test in the subgroup: (a) Qualification inspection: within 24 hours. (b) Quality conformance inspection: within 96 hours. TABLE I. Group A inspection L ws MIL-STD-750 T Limits Examination or test Y Pp Method Details D Symbol | Min | Max Unit Subgroup 1 10 Visual and mechanical 2071 --- --- --- oe examination Subgroup 2 5 Breakdown voltage, 3011 Bias cond, D; BVcEO collector to emitter Ic = 250 pAdc 2N497, 2N656 60 --- | Vde 2N498, 2N657 100 --- Vdc Breakdown voltage, 3011 | Bias cond. D; 1, = 30 mAdc; BVCEO collector to emitter pulsed (see 4. 4.1) QN497, 2N656 60 --- | Vde 2N498, 2N657 100 --- | Vde Breakdown voltage, 3001 | Bias cond. D; BVcBo collector to base Ic = 100 Ade 2N497, 2N656 60 --- | Vde 2N498, 2N657 100 --- Vde Breakdown voltage, 3026 | Bias cond. D; BVFRO| 8-9 --- | Vde emitter to base Ip = 250 pAdcMIL SPECS MIL-S-19500/74E TABLE I. Group A inspection - Continued rc cooo125 Ooonsus & i MIL-STD-750 r Limits Examination or test P Method Details D Symbol | Min Max | Unit Subgroup 2 - Continued Collector to base 3036 | Bias cond. D IcBo cutoff current 2N497, 2N656 Vop = 50 Vde oo 1.0 | pAdc 2N498, 2N657 Vocp = 80 Vdc --- 1.0 | wAdc Subgroup 3 5 Forward- current 3076 | Vop= 10 Vdc; hep transfer ratio Ic = 50 mAdc 2N497, 2N498 10 40 | --- 2N656, 2N657 20 100 | --- Forward- current 3076 | Vcg = 10 Vde; Ic = 200 mAdc; hrr transfer ratio pulsed (see 4,4, 1) 2N497, 2N498 12 36 | --- 2N656, 2N657 30 90 | --- Collector to emitter 3071 | Ic = 200 mAdc; Ip = 40 mAdc; Veg (sat) 0.1 2.0 | Vde voltage (saturated) pulsed (see 4, 4. 1) Base emitter voltage 3066 | Test cond. B; Ia= 200 mAdc; VBE --- 2,0 | Vde (nonsaturated) Vor= 10 Vdc; pulsed (see 4, 4,1) Magnitude of common- 3306 | VoRp = 30 Vde;Ia= 30 mAde; | hge| 1.5 | 10.0 j --- emitter small-signal f= 10 MHz short-circuit forward- current transfer ratio Subgroup 4 10 High-temperature operation: Ta=+ 150 C lorx Collector to emitter cutoff 3041 | Bias cond. A; current VBE = -1.5 Vde 2N497, 2N656 Vor = 60 Vde --- 300 | pAdc 2N498, 2N657 Vcr = 100 Vdc --- 300 | pAdc Low-temperature operation: Ta = -55C Forward-current transfer 3076 i VoR = 10 Vde;I= 200 mAdc; hpp ratio pulsed (see 4, 4, 1) 2N497, 2N498 6 --- --- 2N656, 2N657 15 --- ---MIL SPECS cf ooco1es oovosy7 3 fj TABLE 0. Group B inspection MIL-S-19500/74E MIL-STD-750 t Limits Examination or test P Method Details D Symbol | Min | Max | Unit Subgroup 1 20 Physical dimensions 2066 | (See figure 1) ~-- --- --- oe- Subgroup 2 15 Solderability 2026 | Omit aging one --- --- one Thermal shock 1051 | Test cond. C --- --- --- --- (temperature cycling) Thermal shock (glass strain)| 1056 | Test cond. A --- -- wee | nee Seal (leak-rate) --- | MIL-STD-202, method 112, --- --- |5x107 atm test cond, C, procedure I; cc/sec test cond. A for gross leaks Moisture resistance 1021 oe --- --- --- End points: (See 4.4.2.) Collector to base cutoff 3036 | Bias cond. D; IcBo current 2N497, 2N656 VcB = 50 Vdc --- 1.0 | pAdc 2N498, 2N657 Vop = 80 Vde --- | 1.0 | pAde Forward-current transfer 3076 | 1, = 200 mAdc; Vox =10 Vde; hep ratio pulsed (see 4.4, 1) 2N497, 2N498 12 36 | --- 2N656, 2N657 30 90 | --- Subgroup 3 15 Shock 2016 | Nonoperating; 1500 G, --- --- --- --- 0.5 msec, 5 blows in each orientation: x4, Ys Yo and 24 Vibration fatigue 2046 | Nonoperating --- --- --- --- Vibration, variable frequency} 2056 --- = --- one Constant acceleration 2006 | 10, 000 G; in each orienta- --- --- --- --- tion; X4, Y4, Yo, and Z4 End points: ' (Same as subgroup 2) Subgroup 4 15 Terminal strength 2036 |Test cond. E --- --- --- --- (lead fatigue) Subgroup 5 15 Salt atmosphere (corrosion) 1041 .o- one wor ---MIL SPECS MIL-S-19500/74E TABLE 0. Group B inspection - Continued Ic 0000125 Oooos54a T i reduced (altitude operation) pressure = 8 mm Hg for 60 sec min MIL-STD-750 r Limits Examination or test P Method Details D Symbol | Min Max | Unit Subgroup 5 - Continued End points: (Same as subgroup 2) Subgroup 6 7 High-temperature life 1031 Tyg = +200 C; --- --- a-- | oon (nonoperating) t= 340 hrs (see 4.3, 4) End points: (See 4.4.2.) Collector to base cutoff 3036 | Bias cond. D IcBo current 2N497, 2N656 Vop = 50 Vde --- 10 | pAde 2N498, 2N657 Vop= 80 Vde --- 10 | pAdc Forward- current transfer 3076 | Voz = 10 Vde; Ic =200 mAde; hpe ratio pulsed (see 4. 4, 1) 2N497, 2N498 9.6 45 --- 2N656, 2N657 24 117 ore Breakdown voltage, col- 3011 | Bias cond. D;Ig= 30 mAdc; BVcEro lector to emitter pulsed (see 4. 4, 1) 2N497, 2N656 60 --- | Vde 2N498, 2N657 100 | --- | Vde Subgroup 7 7 Steady-state operation life 1026 | Ta = 25 C;Pp= 0.8 W; --- --- --- | --- Vor = 40 Vde; t= 340hours (see 4, 3, 4) End points: (Same as subgroup 6) TABLE Il. Group C inspection L ws MIL-STD-750 T Limits Examination or test Pp Method Details D Symbol! | Min | Max | Unit Subgroup 1 15 Barometric pressure, 1001 Normal mounting; --- ane --- MIL SPECS cj ooo00Les oo00544 1 i TABLE IN. Group C inspection - Continued MIL-S-19500/74E Examination or test MIL-STD-750 Method Details OvAar Symbol Limits Unit Subgroup 1 - Continued Measurement during test: Collector to base cutoff current 2N497, 2N656 2N498, 2N657 Subgroup 2 High-temperature life (nonoperating) End points: (Same as subgroup 6 of group B) Subgroup 3 Steady-state operation life End points: (Same as subgroup 6 of group B) Subgroup 4 Burnout by pulsing End points: (Same as subgroup 6 of group B. ) 3036 1031 1026 3005 Bias cond, D; Vop = 60 Vdc Vop = 100 Vde T stg = +200 C (see 4, 3. 4) Ta = 25C; Pp= 0.8 W Vog = 40 Vde (see 4.3, 4) Prepulse cond,: To = 25 C; Vcr = 0; Ic = 0 Pulse cond.: VcEr= 40 Vde; Ic= 0. 1 Adc; ty = 60 sec, 1 cycle; typ <6 sec; ts <6 sec A= 10 15 IcBo 100 100 pAdc pAde 5. PREPARATION FOR DELIVERY 5.1 See MIL-S-19500, section 5.MIL SPECS Icf gooo01eS Oooo0ss50 4 | MIL~S-19500/74E 6. NOTES: 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Ordering data. (2) Lead finish if other than gold-plated Kovar. (See 3, 3.1.) > (b) Terminal-lead length if other than specified on figure 1. (See 3.3. 2. ) 6.3 Changes from previous issue, Asterisks are not uSed in this revision to identify changes with respect to the previous issue, due to the extensiveness of the changes. 6.4 Substitution criteria. The devices covered herein are interchangeable with the corresponding devices covered by the superseded MIL-S-19500/74D, Custodians: Preparing activity: Army - EL Navy - EC Navy -EC Air Force - 11 (Project 5961-0009-21) Review activities: Army - EL, MU, MI Navy -EC Air Force - 11, 17, 85 Code "'C"' User activities: Army - EL, SM Navy - CG, MC, AS, OS Air Force - 14, 19 *US GOVERNMENT PRINTING OFFICE 197-305-$)2 254 10