TIP35A/35B/35C
TIP36A/36B/36C
COMPLEMENTARY SILICON HIGH POWER
TRANSISTORS
TIP35B, TIP35C, TIP36B, ANDTIP36CARE
SGS-THOMSONPREFERRED
SALESTYPES
DESCRIPTION
The TIP35A, TIP35B and TIP35C are silicon
epitaxial-base NPN transistors in TO-218 plastic
package. They are intented for use in power
amplifier and switchingapplications.
The complementary PNP types are TIP36A,
TIP36Band TIP36C.
INTERNAL SCHEMATIC DIAGRAM
October1995
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP35A TIP35B TIP35C
PNP TIP36A TIP36B TIP36C
VCBO Collector-Base Voltage (IE= 0) 60 80 100 V
VCEO Collector-Emitter Voltage (IB= 0) 60 80 100 V
VEBO Emitter-Base Voltage (IC=0) 5 V
I
CCollector Current 25 A
ICM Collector Peak Current 50 A
IBBase Current 5 A
Ptot Total Dissipation at Tcase ≤ 25 oC 125 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
For PNP types voltage and currentvalues are negative.
123
TO-218
1/4
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1 oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25o
C unlessotherwisespecified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cut-off
Current (IB=0) for TIP35A/36A
VCE =30V
for TIP35B/35C/36B/36C
VCB =60V
1
1
mA
mA
IEBO Emitter Cut-off Current
(IC=0) V
EB =5V 1 mA
I
CES Collector Cut-off
Current (VBE =0) V
CE =RatedV
CEO 0.7 mA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB=0)
I
C=30mA
for TIP35A/36A
for TIP35B/36B
for TIP35C/36C
60
80
100
V
V
V
hFE* DC Current Gain IC=1.5A V
CE =4V
I
C=15A V
CE =4V 25
10 50
VCE(sat)* Collector-Emitter
Saturation Voltage IC=15A I
B=1.5A
I
C=25A I
B=5A 1.8
4V
VBE(on)* Base-Emitter Voltage IC=15A V
CE =4V
I
C=25A V
CE =4V 2
4V
V
f
TTransition Frequency IC=1A V
CE =10V
f=1MHz 3MHz
h
fe Small Signal Current
Gain IC=1A V
CE =10V
f=1KHz 25
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤2%
For PNPtypes voltage and current valuesare negative.
TIP35A/TIP35B/TIP35C/TIP36A/TIP36B/TIP36C
2/4
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
R
A
C
D
E
H
F
G
L6
¯
L3
L2
L5
123
TO-218 (SOT-93) MECHANICAL DATA
P025A
TIP35A/TIP35B/TIP35C/TIP36A/TIP36B/TIP36C
3/4
Information furnished is believed to be accurateand reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use ofsuch informationnor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication orotherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorized for use as criticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
Australia- Brazil- France- Germany - HongKong - Italy - Japan- Korea - Malaysia- Malta- Morocco - TheNetherlands-
Singapore- Spain- Sweden - Switzerland- Taiwan - Thailand- United Kingdom- U.S.A
.
TIP35A/TIP35B/TIP35C/TIP36A/TIP36B/TIP36C
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