1 of 22 072401
FEATURES
§ Real-time clock keeps track of hundredths of
seconds, minutes, hours, days, date of the
month, months, and years
§ 512k x 8 NV SRAM directly replaces
volatile static RAM or EEPROM
§ Embedded lithium energy cell maintains
calendar operation and retains RAM data
§ Watch function is transparent to RAM
operation
§ Month and year determine the number of
days in each month; valid up to 2100
§ Over 10 years of data retention in the
absence of power
§ Full 10% operating range
§ Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
§ DIP Module only
– Standard 32–pin JEDEC pinout
– Upward comparable with the DS1248
§ PowerCap® Module Board only
– Surface mountable package for direct
connection to PowerCap containing
battery and crystal
– Replaceable battery (PowerCap)
– Pin for pin compatible with other densities
of DS124XP Phantom Clocks
PIN ASSIGNMENT
DS1251/DS1251P
4096k NV SRAM with Phantom Clock
www.maxim-ic.com
13
1
2
3
4
5
6
7
8
9
10
11
12
14
31
32-Pin Encapsulated Package
740-mil Flush
A14
A7
A5
A4
A3
A2
A1
A0
DQ1
DQ0
VCC
A
15
A
17
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
DQ7
DQ5
DQ6
32
30
29
28
27
26
25
24
23
22
21
19
20
A16
A12
A6
A18/RST
DQ2
GND
15
16
18
17
DQ4
DQ3
1
RST 2
3
A15
A16
NC
VCC
WE
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
4
5
6
7
8
9
10
11
12
13
14
15
16
17
A
17
A
14
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
A
13
A
12
A
11
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
34
A
18
X1 GND VBAT X2
34-Pin PowerCap Module Board
(Uses DS9034PCX PowerCap)
DS1251/DS1251P
2 of 22
ORDERING INFORMATION
DS1251YP–XXXY (5V)
-IND Industrial
-70 70 ns access
-100 100 ns access
blank 32-pin DIP Module
P 34-pin PowerCap Module board*
DS1251WP-XXXY (3.3V)
-IND Industrial
-120 120 ns access
-150 150 ns access
blank 32-pin DIP Module
P 34-pin PowerCap Module board*
*DS9034PCX (PowerCap) Required: (must be ordered separately)
PIN DESCRIPTION
A0–A18 – Address Inputs
CE – Chip Enable
OE – Output Enable
WE – Write Enable
VCC – Power Supply Input
GND – Ground
DQ0–DQ7 – Data In/Data Out
NC – No Connection
X1,X2 – Crystal Connection
VBAT – Battery Connection
RST – Reset
DESCRIPTION
The DS1251 4096k NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512k
words by 8 bits) with a built–in real-time clock. The DS1251Y has a self–contained lithium energy
source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When
such a condition occurs, the lithium energy source is automatically switched on and write protection is
unconditionally enabled to prevent garbled data in both the memory and real-time clock.
The Phantom Clock provides timekeeping information including hundredths of seconds, seconds,
minutes, hours, day, date, month, and year information. The date at the end of the month is automatically
adjusted for months with less than 31 days, including correction for leap years. The Phantom Clock
operates in either 24–hour or 12–hour format with an AM/PM indicator.
DS1251/DS1251P
3 of 22
RAM READ MODE
The DS1251 executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable)
is active (low). The unique address specified by the 19 address inputs (A0–A18) defines which of the
512k bytes of data is to be accessed. Valid data will be available to the eight data output drivers within
tACC (Access Time) after the last address input signal is stable, providing that CE and OE (Output Enable)
access times and states are also satisfied. If OE and CE access times are not satisfied, then data access
must be measured from the later occurring signal ( CE or OE ) and the limiting parameter is either tCO for
CE or tOE for OE rather than address access.
PACKAGES
The DS1251 is available in two packages (32–pin DIP and 34–Pin PowerCap module). The 32–pin DIP
style module integrates the crystal, lithium energy source, and silicon all in one package. The 34–pin
PowerCap Module Board is designed with contacts for connection to a separate PowerCap (DS9034PCX)
that contains the crystal and battery. This design allows the PowerCap to be mounted on top of the
DS1251P after the completion of the surface mount process. Mounting the PowerCap after the surface
mount process prevents damage to the crystal and battery due to the high temperatures required for solder
reflow. The PowerCap is keyed to prevent reverse insertion. The PowerCap Module Board and
PowerCap are ordered separately and shipped in separate containers. The part number for the Powercap
is DS9034PCX.
RAM READ MODE
The DS1251 executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip Enable)
is active (low). The unique address specified by the 19 address inputs (A0–A18) defines which of the
512k bytes of data is to be accessed. Valid data will be available to the eight data output drivers within
tACC (Access Time) after the last address input signal is stable, providing that CE and OE (Output Enable)
access times and states are also satisfied. If OE and CE access times are not satisfied, then data access
must be measured from the later occurring signal ( CE or OE ) and the limiting parameter is either tCO for
CE or tOE for OE rather than address access.
RAM WRITE MODE
The DS1251 is in the write mode whenever the WE and CE signals are in the active (low) state after
address inputs are stable. The latter occurring falling edge of CE or WE will determine the start of the
write cycle. The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs
must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery
time (tWR ) before another cycle can be initiated. The OE control signal should be kept inactive (high)
during write cycles to avoid bus contention. However, if the output bus has been enabled ( CE and OE
active) then WE will disable the outputs in tODW from its falling edge.
DS1251/DS1251P
4 of 22
DATA RETENTION MODE
The 5 volt device is fully accessible and data can be written or read only when VCC is greater than VPF .
However, when VCC is below the power fail point, VPF , (point at which write protection occurs) the
internal clock registers and SRAM are blocked from any access. When VCC falls below the battery switch
point VSO (battery supply level), device power is switched from the VCC pin to the backup battery. RTC
operation and SRAM data are maintained from the battery until VCC is returned to nominal levels. The
3.3-volt device is fully accessible and data can be written or read only when VCC is greater than VPF .
When VCC falls below the power fail point, VPF , access to the device is inhibited. If VPF is less than VBAT ,
the device power is switched from VCC to the backup supply (VBAT ) when VCC drops below VPF . If VPF is
greater than VBAT , the device power is switched from VCC to the backup supply (VBAT ) when VCC drops
below VBAT . RTC operation and SRAM data are maintained from the battery until VCC is returned to
nominal levels. All control, data, and address signals must be powered down when VCC is powered down.
PHANTOM CLOCK OPERATION
Communication with the Phantom Clock is established by pattern recognition on a serial bit stream of
64 bits which must be matched by executing 64 consecutive write cycles containing the proper data on
DQ0. All accesses which occur prior to recognition of the 64–bit pattern are directed to memory.
After recognition is established, the next 64 read or write cycles either extract or update data in the
Phantom Clock, and memory access is inhibited.
Data transfer to and from the timekeeping function is accomplished with a serial bit stream under control
of Chip Enable ( CE ), Output Enable ( OE ), and Write Enable ( WE ). Initially, a read cycle to any
memory location using the CE and OE control of the Phantom Clock starts the pattern recognition
sequence by moving a pointer to the first bit of the 64–bit comparison register. Next, 64 consecutive
write cycles are executed using the CE and WE control of the SmartWatch. These 64 write cycles are
used only to gain access to the Phantom Clock. Therefore, any address to the memory in the socket is
acceptable. However, the write cycles generated to gain access to the Phantom Clock are also writing
data to a location in the mated RAM. The preferred way to manage this requirement is to set aside just
one address location in RAM as a Phantom Clock scratch pad. When the first write cycle is executed, it
is compared to bit 0 of the 64–bit comparison register. If a match is found, the pointer increments to the
next location of the comparison register and awaits the next write cycle. If a match is not found, the
pointer does not advance and all subsequent write cycles are ignored. If a read cycle occurs at any time
during pattern recognition, the present sequence is aborted and the comparison register pointer is reset.
Pattern recognition continues for a total of 64 write cycles as described above until all the bits in the
comparison register have been matched (this bit pattern is shown in Figure 1). With a correct match for
64–bits, the Phantom Clock is enabled and data transfer to or from the timekeeping registers can proceed.
The next 64 cycles will cause the Phantom Clock to either receive or transmit data on DQ0, depending on
the level of the OE pin or the WE pin. Cycles to other locations outside the memory block can be
interleaved with CE cycles without interrupting the pattern recognition sequence or data transfer
sequence to the Phantom Clock.
DS1251/DS1251P
5 of 22
PHANTOM CLOCK REGISTER INFORMATION
The Phantom Clock information is contained in eight registers of 8 bits, each of which is sequentially
accessed 1 bit at a time after the 64–bit pattern recognition sequence has been completed. When updating
the Phantom Clock registers, each register must be handled in groups of 8 bits. Writing and reading
individual bits within a register could produce erroneous results. These read/write registers are defined in
Figure 2.
Data contained in the Phantom Clock register is in binary coded decimal format (BCD). Reading and
writing the registers is always accomplished by stepping through all eight registers, starting with bit 0 of
register 0 and ending with bit 7 of register 7.
PHANTOM CLOCK REGISTER DEFINITION Figure 1
NOTE:
The pattern recognition in Hex is C5, 3A, A3, 5C, C5, 3A, A3, 5C. The odds of this pattern being
accidentally duplicated and causing inadvertent entry to the Phantom Clock is less than 1 in 1019. This
pattern is sent to the Phantom Clock LSB to MSB.
DS1251/DS1251P
6 of 22
PHANTOM CLOCK REGISTER DEFINITION Figure 2
AM–PM/12/24 MODE
Bit 7 of the hours register is defined as the 12– or 24–hour mode select bit. When high, the 12–hour
mode is selected. In the 12–hour mode, bit 5 is the AM/PM bit with logic high being PM. In the 24–hour
mode, bit 5 is the second 10–hour bit (20–23 hours).
OSCILLATOR AND RESET BITS
Bits 4 and 5 of the day register are used to control the RESET and oscillator functions. Bit 4 controls the
RESET (pin 1). When the RESET bit is set to logic 1, the RESET input pin is ignored. When the RESET
bit is set to logic 0, a low input on the RESET pin will cause the Phantom Clock to abort data transfer
without changing data in the watch registers. Bit 5 controls the oscillator. When set to logic 1, the
oscillator is off. When set to logic 0, the oscillator turns on and the watch becomes operational. These
bits are shipped from the factory set to a logic 1.
ZERO BITS
Registers 1, 2, 3, 4, 5, and 6 contain one or more bits which will always read logic 0. When writing these
locations, either a logic 1 or 0 is acceptable.
DS1251/DS1251P
7 of 22
BATTERY LONGEVITY
The DS1251 has a lithium power source that is designed to provide energy for clock activity, and clock
and RAM data retention when the VCC supply is not present. The capability of this internal power supply
is sufficient to power the DS1251 continuously for the life of the equipment in which it is installed. For
specification purposes, the life expectancy is 10 years at 25°C with the internal clock oscillator running in
the absence of VCC power. Each DS1251 is shipped from Dallas Semiconductor with its lithium energy
source disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than
VPF , the lithium energy source is enabled for battery backup operation. Actual life expectancy of the
DS1251 will be much longer than 10 years since no lithium battery energy is consumed when VCC is
present.
CLOCK ACCURACY (DIP MODULE)
The DS1251 is guaranteed to keep time accuracy to within ±1 minute per month at 25°C. The clock is
calibrated at the factory by Dallas Semiconductor using special calibration nonvolatile tuning elements.
The DS1251 does not require additional calibration and temperature deviations will have a negligible
effect in most applications. For this reason, methods of field clock calibration are not available and not
necessary.
CLOCK ACCURACY (POWERCAP MODULE)
The DS1251P and DS9034PCX are each individually tested for accuracy. Once mounted together, the
module is guaranteed to keep time accuracy to within ±1.53 minutes per month (35 ppm) at 25°C.
DS1251/DS1251P
8 of 22
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground -0.3V to +6.0V
Soldering Temperature 260°C for 10 seconds (DIP) See Note 13
See IPC/JEDEC Standard J-STD-020A for
Surface Mount Devices
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
Operating Range
Range Temperature VCC
Commercial 0°C to +70°C 3.3V ± 10% or 5V ± 10%
Industrial -40°C to +85°C 3.3V ± 10% or 5V ± 10%
RECOMMENDED DC OPERATING CONDITIONS Over the operating range
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
VIH 2.2 VCC+0.3V V 11
Logic 1 Voltage All Inputs
VCC = 5V ± 10%
VCC = 3.3V ± 10% VIH 2.0 VCC+0.3V V 11
VIL -0.3 0.8 V 11
Logic 0 Voltage All Inputs
VCC = 5V ± 10%
VCC = 3.3V ± 10% VIL -0.3 0.6 V 11
DS1251/DS1251P
9 of 22
DC ELECTRICAL CHARACTERISTICS Over the operating range (5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Leakage Current I IL -1.0 +1.0 mA12
I/O Leakage Current
CE ³ VIH[ VCC
I IO -1.0 +1.0 mA
Output Current @ 2.4V IOH -1.0 mA
Output Current @ 0.4V IOL 2.0 mA
Standby Current CE = 2.2V ICCS1 510mA
Standby Current CE =
VCC – 0.5V
ICCS2 3.0 5.0 mA
Operating Current tCYC = 70 ns ICC01 85 mA
Write Protection Voltage VPF 4.25 4.37 4.50 V 11
Battery Switch Over Voltage VSO VBAT V11
DC ELECTRICAL CHARACTERISTICS Over the operating range (3.3V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Leakage Current I IL -1.0 +1.0 mA12
I/O Leakage Current
CE ³ VIH[ VCC
I IO -1.0 +1.0 mA
Output Current @ 2.4V IOH -1.0 mA
Output Current @ 0.4V IOL 2.0 mA
Standby Current CE = 2.2V ICCS1 57mA
Standby Current CE =
VCC – 0.5V
ICCS2 2.0 3.0 mA
Operating Current tCYC = 70 ns ICC01 50 mA
Write Protection Voltage VPF 2.80 2.97 V 11
Battery Switch Over Voltage VSO VBAT or
VPF
V11
CAPACITANCE (tA = 25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Capacitance CIN 510pF
Input/Output Capacitance CI/O 510pF
DS1251/DS1251P
10 of 22
MEMORY AC ELECTRICAL CHARACTERISTICS
Over the operating range (5V)
DS1251Y-70 DS1251Y-100
PARAMETER SYMBOL MIN MAX MIN MAX UNITS NOTES
Read Cycle Time tRC 70 100 ns
Access Time tACC 70 100 ns
OE to Output Valid tOE 35 55 ns
CE to Output Valid tCO 70 100 ns
OE or CE to Output Active tCOE 55 ns5
Output High Z from Deselection tOD 25 35 ns 5
Output Hold from Address Change tOH 55 ns
Write Cycle Time tWC 70 100 ns
Write Pulse Width tWP 50 70 ns 3
Address Setup Time tAW 00 ns
Write Recovery Time tWR 00 ns
Output High Z from WE tODW 25 35 ns 5
Output Active from WE tOEW 55 ns5
Data Setup Time tDS 30 40 ns 4
Data Hold Time from WE tDH 55 ns4
DS1251/DS1251P
11 of 22
PHANTOM CLOCK AC ELECTRICAL CHARACTERISTICS
Over the operating range (5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Read Cycle Time tRC 65 ns
CE Access Time tCO 55 ns
OE Access Time tOE 55 ns
CE to Output Low Z tCOE 5ns
OE to Output Low Z tOEE 5ns
CE to Output High Z tOD 25 ns 5
OE to Output High Z tODO 25 ns 5
Read Recovery tRR 10 ns
Write Cycle Time tWC 65 ns
Write Pulse Width tWP 55 ns 3
Write Recovery tWR 10 ns 10
Data Setup Time tDS 30 ns 4
Data Hold Time tDH 0ns4
CE Pulse Width tCW 60 ns
RESET Pulse Width tRST 65 ns
POWER-DOWN/POWER-UP TIMING Over the operating range (3.3V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
CE at VIH before Power-Down tPD 0ms
VCC Slew from VPF(max) to
VPF(min)(CE at VPF)
tF300 ms
VCC Slew from VPF(min) to VSO tFB 10 ms
VCC Slew from VPF(max) to
VPF(min)(CE at VPF)
tR0ms
CE at VIH after Power-Up tREC 1.5 2.5 ms
(tA = 25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Expected Data Retention Time tDR 10 years 9
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
DS1251/DS1251P
12 of 22
MEMORY AC ELECTRICAL CHARACTERISTICS
Over the operating range (3.3V)
DS1251W-120 DS1251W-150
PARAMETER SYMBOL MIN MAX MIN MAX UNITS NOTES
Read Cycle Time tRC 120 150 ns
Access Time tACC 120 150 ns
OE to Output Valid tOE 60 75 ns
CE to Output Valid tCO 120 150 ns
OE or CE to Output Active tCOE 55ns5
Output High Z from Deselection tOD 40 70 ns 5
Output Hold from Address
Change tOH 55ns
Write Cycle Time tWC 120 150 ns
Write Pulse Width tWP 90 100 ns 3
Address Setup Time tAW 00ns
Write Recovery Time tWR 20 20 ns 10
Output High Z from WE tODW 40 70 ns 5
Output Active from WE tOEW 55ns5
Data Setup Time tDS 50 60 ns 4
Data Hold Time from WE tDH 20 20 ns 4
PHANTOM CLOCK AC ELECTRICAL CHARACTERISTICS
Over the operating range (3.3V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Read Cycle Time tRC 120 ns
CE Access Time tCO 100 ns
OE Access Time tOE 100 ns
CE to Output Low Z tCOE 5ns
OE to Output Low Z tOEE 5ns
CE to Output High Z tOD 40 ns 5
OE to Output High Z tODO 40 ns 5
Read Recovery tRR 20 ns
Write Cycle Time tWC 120 ns
Write Pulse Width tWP 100 ns 3
Write Recovery tWR 20 ns 10
Data Setup Time tDS 45 ns 4
Data Hold Time tDH 0ns4
CE Pulse Width tCW 105 ns
RESET Pulse Width tRST 120 ns
DS1251/DS1251P
13 of 22
POWER-DOWN/POWER-UP TIMING Over the operating range (3.3V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
CE at VIH before Power-Down tPD 0ms
VCC Slew from VPF(max) to
VPF(min)(CE at VIH)
tF300 ms
VCC Slew from VPF(max) to
VPF(min)(CE at VIH)
tR0ms
CE at VIH after Power-Up tREC 1.5 2.5 ms
(tA = 25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Expected Data Retention Time tDR 10 years 9
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
DS1251/DS1251P
14 of 22
MEMORY READ CYCLE (NOTE 1)
MEMORY WRITE CYCLE 1 (NOTES 2, 6, AND 7)
DS1251/DS1251P
15 of 22
MEMORY WRITE CYCLE 2 (NOTES 2 AND 8)
RESET FOR PHANTOM CLOCK
READ CYCLE TO PHANTOM CLOCK
DS1251/DS1251P
16 of 22
WRITE CYCLE TO PHANTOM CLOCK
DS1251/DS1251P
17 of 22
DS1251/DS1251P
18 of 22
AC TEST CONDITIONS
Output Load: 50 pF + 1TTL Gate
Input Pulse Levels: 0–3V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5 ns
NOTES:
1. WE is high for a read cycle.
2. OE = VIH or VIL . If OE = VIH during write cycle, the output buffers remain in a high impedance
state.
3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. tDH , t DS are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 50 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition in Write
Cycle 1, the output buffers remain in a high impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9. The expected tDR is defined as cumulative time in the absence of VCC with the clock oscillator
running.
10. tWR is a function of the latter occurring edge of WE or CE .
11. Voltage are referenced to ground.
12. RST (Pin1) has an internal pull–up resistor.
13. Real–Time Clock Modules can be successfully processed through conventional wave–soldering
techniques as long as temperature exposure to the lithium energy source contained within does not
exceed +85°C. Post solder cleaning with water washing techniques is acceptable, provided that
ultrasonic vibration is not used.
In addition, for the PowerCap:
a. Dallas Semiconductor recommends that PowerCap Module bases experience one pass through solder
reflow oriented with the label side up (“live – bug”).
b. Hand Soldering and touch–up: Do not touch or apply the soldering iron to leads for more than
3 (three) seconds.
To solder, apply flux to the pad, heat the lead frame pad and apply solder. To remove the part, apply flux,
heat the lead frame pad until the solder reflow and use a solder wick to remove solder.
DS1251/DS1251P
19 of 22
DS1251 4096k NV SRAM WITH PHANTOM CLOCK
KG 32-PIN
DIM MIN MAX
A IN.
MM
1.680
42.67
1.740
44.20
B IN.
MM
0.715
18.16
0.740
18.80
C IN.
MM
0.335
8.51
0.365
9.27
D IN.
MM
0.075
1.91
0.105
2.67
E IN.
MM
0.015
0.38
0.030
0.76
F IN.
MM
0.140
3.56
0.180
4.57
G IN.
MM
0.090
2.29
0.110
2.79
H IN.
MM
0.590
14.99
0.630
16.00
J IN.
MM
0.010
0.25
0.018
0.46
K IN.
MM
0.015
0.38
0.025
0.64
DS1251/DS1251P
20 of 22
DS1251P
PKG INCHES
DIM MIN NOM MAX
A 0.920 0.925 0.930
B 0.980 0.985 0.990
C - - 0.080
D 0.052 0.055 0.058
E 0.048 0.050 0.052
F 0.015 0.020 0.025
G 0.025 0.027 0.030
NOTE:
Dallas Semiconductor recommends that PowerCap Module bases experience one pass through solder
reflow oriented with the label side up (“live – bug”).
Hand Soldering and touch–up: Do not touch or apply the soldering iron to leads for more than 3 (three)
seconds. To solder, apply flux to the pad, heat the lead frame pad and apply solder. To remove the part,
apply flux, heat the lead frame pad until the solder reflows and use a solder wick to remove solder.
DS1251/DS1251P
21 of 22
DS1251P WITH DS9034PCX ATTACHED
PKG INCHES
DIM MIN NOM MAX
A 0.920 0.925 0.930
B 0.955 0.960 0.965
C 0.240 0.245 0.250
D 0.052 0.055 0.058
E 0.048 0.050 0.052
F 0.015 0.020 0.025
G 0.020 0.025 0.030
COMPONENTS AND PLACEMENT MAY
VARY FROM EACH DEVICE TYPE
DS1251/DS1251P
22 of 22
RECOMMENDED POWERCAP MODULE LAND PATTERN
INCHESPKG
DIM MIN NOM MAX
A - 1.050 -
B - 0.826 -
C - 0.050 -
D - 0.030 -
E - 0.112 -
