IS-B50HN-C0 - Polyphaser - Datasheet.Live

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +5 V

Rev. V2

MABC-001000-DPS00L

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DC-0008521

Features

 Robust GaN Protection at Any Power Up/Power

Down Sequence

 Fixed Gate with Pulsed Drain Bias Voltage. Add-

On Module Allows for Gate Pulsing

 Open Drain Output Current of ≤200 mA for

External MOSFET Switch Drive

 30 dB EMI/RFI Rejection at All I/O Ports

 6.60 x 22.48 mm2 Package with 1 mm Pitch SMT

Leads

 Target ≤500 ns Total Switch Transition Time

 Low Power Dissipation <100 mW

 Gate Bias Output Current ≤50 mA for Heavy RF

Compression

 RoHS* Compliant and 260°C Reflow Compatible

Description

The MABC-001000-DPS00L is a Low Power

Dissipation bias controller that provides proper gate

voltage and pulsed drain voltage biasing for a device

under test (DUT). Applicable DUT’s include

depletion-mode GaN (Gallium Nitride) or GaAs

(Gallium Arsenide) power amplifiers or HEMT

devices.

The module also provides bias sequencing so that

pulsed drain voltage cannot be applied to a DUT

unless the negative gate bias voltage is present.

The applications section of this datasheet will show

how the module can be implemented for the

following two applications:

 Application Option 1: Fixed negative gate

biasing with pulsed drain biasing.

 Application Option 2: Pulsed negative gate

biasing with pulsed drain biasing.

Both of these application options will recommend the

external circuitry and p-Channel Power MOSFET.

The MABC-001000-DP000L module can also be

installed onto an MABC-001000-PB2PPR evaluation

board for evaluation, test, and characterization

purposes.

Ordering Information

Part Number Packaging

MABC-001000-DPS00L Tray

MABC-001000-DPS0TL Tape & Reel2

MABC-001000-PB2PPR Gate and Drain Pulsing

Evaluation Board3

* Restrictions on Hazardous Substances,

European Union Directive 2011/65/EU.

Pin No. Label Function

1 GFB Gate Voltage (-) Feedback

2,6,8,10 NC No Connection

3 GCO Gate Voltage (-) Control Output

4 GCI Gate Voltage (-) Control Input

5 VGS Gate (-) Supply Voltage

7,13,14 GND Ground

9 SWG Driver Output to MOS Switch Gate

11 P4V +5 V VCC Input

12 ENS MOS Switch Enable TTL

Pin Configuration1

2. Reference Application Note M513 for reel size information.

3. Specify eval. board configuration when ordering: Application

Option 1 or 2. See Applications Section for option details.

1. This Configuration is for Fixed Gate Bias. Unused package

pins must be left open and not connected to ground.

Functional Schematic

1314

GFB

GCO

GCI

VGS

ENS

P4V

SWG

NC GND

GND GND

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +5 V

Rev. V2

MABC-001000-DPS00L

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For further information and support please visit:

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DC-0008521

Electrical Characteristics: TA = 25°C

Absolute Maximum Ratings4,5 Recommended Operating Conditions

Symbol Parameter Conditions Min Typ Max Unit

VCC Supply Voltage, Positive 4.3 5 5.5 V

ICC Supply Current, Positive - 13 - mA

VGS Supply Voltage, Negative -8 -6 0 V

IGS Supply Current, Negative - -3 - mA

VENL Input Voltage, Logic 0, Pulse Enable 0 0 0.3 V

VENH Input Voltage, Logic 1, Pulse Enable 2 3.3 4.3 V

IEN Input Current, Pulse Enable - 40 - uA

VGTH Input, Gate Feedback Threshold to VGS - 2.7 - V

VDTH Input, Drain Feedback Threshold - 65% SWG - V

VGC Output Voltage, Pulsed/Fixed Gate -8 -3.5 -0.7 V

VGCR Output Voltage, Pulsed/Fixed Gate Ripple - 50 - mVp-p

IGC Output Gate Current, Peak - 50 - mA

ROFF Output Drive, Open Drain, OFF State

VDS = 50 V

Temp. = +85°C

- 4M - Ω

RON Output Drive, Open Drain, ON State - 1.2 - Ω

ION Output Drive, Current, ON State - 100 200 mA

Parameter Typical

Supply (+) Voltage, VCC +4.8 V to +5 V

Supply (-) Voltage, VGS -8 V to -2 V

Logic Voltage, ENS, GSE 0 V to +4.3 V

Analog (-) Voltage, GCI, GFB -8 V to –0.7V

Switch Driver Sink Current, SWG -1 mA to -200 mA

Operating Temperature -40°C to +85°C

Parameter Absolute Maximum

Supply (+) Voltage, VCC +4.3 V to +5.5 V

Supply (-) Voltage, VGS -10 V to 0 V

Logic Voltage, ENS, GSE -0.3 V to +4.5 V

Analog (-) Voltage, GCI, GFB -10 V to 0 V

Switch Driver Voltage, SWG 0 V to +60 V

Switch Driver Sink Current, SWG -200 mA

Lead Soldering Temp (10 s) +260°C

Operating Temperature -40°C to +85°C

Storage Temperature -65°C to +150°C

4. Exceeding any one or combination of these limits may cause

permanent damage to this device.

5. MACOM does not recommend sustained operation near these

survivability limits.

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +5 V

Rev. V2

MABC-001000-DPS00L

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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DC-0008521

TTL

VDS

VGS

+5V

+50V

-3V

-8V

90%

PULSE ENABLE FOR

tD1 D2

RISE1 FALL1

FALL2

10%

90%

10%

RISE2

10%

90%

10%

+50V

VOD

GATE & DRAIN SWITCH

OPEN DRAIN OUTPUT

MOSFET SWITCH OUTPUT

PULSED GATE OUTPUT

RF OUTPUT

Timing Diagrams

Symbol Parameter Conditions Min Typ Max Unit

tD1 Open Drain ON Propagation Delay6

RPULL-UP = 700 Ω

VDD = 50 V

IR = 71 mA avg.

Switch Disconnected

- 100 150 ns

tD3 Open Drain OFF Propagation Delay6 - 70 100 ns

tRISE1 Open Drain Rise Time7 - 116 150 ns

tFALL1 Open Drain Fall Time7 - 58 100 ns

tD1 MOS Switch ON Propagation Delay6 - 200 - ns

RLOAD = 1200 Ω

VDD = 50 V

ILOAD = 42 mA avg.

MOS CISS = 760 pF

RDS,ON = 205 mΩ

tD3 MOS Switch OFF Propagation Delay6 - 1100 - ns

tRISE1 MOS Switch Rise Time7 - 126 - ns

tFALL1 MOS Switch Fall Time7 - 820 - ns

tD2 Gate Bias ON Propagation Delay6 - 156 200 ns

tD4 Gate Bias OFF Propagation Delay6 - 148 200 ns

tRISE2 Gate Bias Rise Time7 - 55 100 ns

tFALL2 Gate Bias Fall Time7 - 44 100 ns

6. Propagation delay is measured from 90% of the TTL signal to 10% of the signal of interest.

7. Rise and fall times are measured between 10% and 90% of the steady state signal.

Timing Characteristics: TA = 25°C

ENS

SWG

GCO

8. Q1 refers to an external p-Channel MOSFET that pulses the drain of the DUT. See Applications Section for more information.

Vcc

+5V EXTERNAL +5V TO

ENABLE LOGIC

VDD (Q1)8

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +5 V

Rev. V2

MABC-001000-DPS00L

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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For further information and support please visit:

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DC-0008521

Applications Section

Functional Description

The MABC-001000-DPS00L GaN Bias Controller/

Sequencer Module circuitry provides proper

sequencing and generation of the gate voltage and

pulsed drain voltage for a device under test (DUT).

Reference the Product View and Pin Configuration

table on page 1. The basic functions of the circuits

within the module are described as follows:

 Overhead Voltages for the Circuits within the

MABC-001000-DPS00L Module

○ Pin 11 (P4V) is the +5V Vcc Input that

supplies the positive voltage for the circuits

within the module.

○ Pin 5 (VGS) is the Gate (-) Supply Voltage

that is also used to supply the negative

voltage for the circuits within the module.

 Negative Gate Voltage for the Device Under

Test (DUT)

○ A voltage follower op-amp circuit provides a

low impedance output to Pin 3 (GCO) Gate

Voltage (-) Control Output. Pin 3 (GCO)

output is connected to the gate terminal of a

DUT as shown in Figure 1 on page 5.

○ The reference voltage for the voltage

follower is provided by the Pin 4 (GCI) Gate

Voltage (-) Analog Input. This input

reference voltage is developed by an

external potentiometer/ resistive divider

circuit as shown in Figure 1 on page 5. It is

recommended to use the -8 V to -3 V

voltage that is also applied to Pin 5 (VGS).

○ Reference: The external potentiometer is

adjusted to set the gate voltage Pin 3 (GCO)

to the DUT. Alternative voltage inputs such

as a temperature compensation circuit or a

Digital-to-Analog (DAC) converter could also

be supplied to Pin 4 (GCI).

 Pin 9 (SWG) MOS Switch Driver Output

○ An N-Channel MOSFET develops the

pulsed signal (SWG) to drive the

resistive divider network for the gate of an

external p-Channel HEXFET as shown in

Figure 1 on page 5. The input signal for the

internal MOSFET is provided by the output

from the sequencing circuits.

 Sequencing Circuits

○ A voltage comparator circuit senses if the

negative gate voltage is present as an input

on Pin 1 (GFB) - Gate Voltage (-) Feedback.

○ A logic circuit provides the switched input

enable signal for the N-Channel MOSFET.

The following 3 signals must be at correct

levels to generate the enable logic

signal:

 Pin 12 (ENS) MOS Switch Enable TTL

 Negative gate voltage (GFB) is present

 P4V voltage is present.

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +5 V

Rev. V2

MABC-001000-DPS00L

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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For further information and support please visit:

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DC-0008521

Applications Section

Part

Value MFG

MFG P/N

R1 2.7 kΩ Panasonic ERJ-2GEJ272X

R2,R3 1.02 kΩ Vishay CRCW25121K02FKEGHP

R4,R5 402 Ω Vishay CRCW2512402RFKEG

VR1 10 kΩ Bourns 3224W-1-103E

Q1 P-Channel

MOSFET IR IRF5210SPBF

Application Option 1:

Fixed Gate with Pulsed Drain Biasing

Figure 1 shows a block diagram of the

MABC-001000-DPS00L module with the

recommended external components to support this

application option. See Table 1 for component

recommendations and values.

Figure 1. Fixed Gate/Pulsed Drain Biasing

Module Layout Guidelines

Reference the Product View, Pin Configuration

Table on page 1, and the Recommended Landing

Pattern on page 7.

The following recommendations should be followed

when the MABC-001000-DPS00L module is used to

bias a high-power RF device or amplifier. The input

and output locations were determined so that the

layout and signal routing could be optimized when

interfacing with a high-power amplifier

assembly.

 The negative gate voltage input and outputs are

located on the left side of the module and should

be located as close as possible to the gate bias

pads on t he high-power amplif ier

assembly.

 The positive pulsed voltages are located on the

right side of the module and should be located

as close as possible to the external MOSFET

switch. The MOSFET switch drain should be

located as close as possible to the drain bias

pads on the high-power amplifier assembly. The

charge storage capacitors should be

located as close as possible to the MOSFET

switch source terminal pads.

 The module ground pads are located at Pins 7,

13, and 14.

 Route all signal lines and ground returns to be

as short as possible and implement a ground

plane on the back of the printed wiring board

(PWB) if that option is available to the

designer. Following these layout criteria will

minimize circuit parasitics that degrade the

performance of the pulsed signal.

Table 1. Recommended Parts List for Fixed

Gate/Pulsed Drain Biasing

RFIN RFOUT

MABC-001000-

DPS00L

DUT

+50 V

-8 V

TTL

VR1

COUT

CIN

CSTORAGE

+5 V

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +5 V

Rev. V2

MABC-001000-DPS00L

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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For further information and support please visit:

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DC-0008521

MABC-001000-000DPM

GaN

-8VDC

50VDC

PWM

IN OUT

GaN

IN OUT

VPOT

VTEMP

DAC

Applications Section

Figure 2. Pulsed Gate/Pulsed Drain Biasing:

(a) North Biasing; (b) South Biasing

Figure 3. Populated MABC-001000-PB2PPR

Evaluation Board

Figure 4. MABC-001000-PB2PPR with

MABC-001000-DPS00L Mounted

(a) (b)

Application Option 2:

Pulsed Gate and Pulsed Drain Biasing

A block diagram showing a typical application of

the MABC-001000-PB2PPR sample board is

shown in Figure 2 below. Figures 3 and 4 show

layouts of the MABC-001000-PB2PPR sample

board with/without the MABC-001000-DPS00L

module installed.

The additional external circuitry on the

MABC-001000-PB2 PPR sam ple boar d

provides the added capability of pulsed gate

biasing. It is important to note that the

evaluation boards can be configured for either

Option 1 or 2. A Full schematic, assembly

layout, and Bill of Materials are available upon

request.

Typical Application Circuits

Single GaN Device Control

MABC-001000-000DPM

GaN

VPOT

VTEMP

DAC

-8VDC

50VDC

PWM

IN OUT

MABC-001000-DPS00L

+5V 11

Multiple GaN Device Control (No RF redundancy)

MABC-001000-DPS00L

+5V

3 3

RFIN RFOUT

MABC-001000-

PB2PPR

DUT

+50 V -8 V

TTL

VD_PULSED

VG_B

VDD TTL -8V RFIN RFOUT

MABC-001000-

PB2PPR

DUT

+50 V-8 V TTL

VD_PULSEDVG_A

VDDTTL

-8V

P4V

+5 V

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +5 V

Rev. V2

MABC-001000-DPS00L

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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For further information and support please visit:

https://www.macom.com/support

DC-0008521

Physical Dimensions10,11,12

Recommended Landing Pattern7 Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

This module is sensitive to electrostatic discharge

(ESD) and can be damaged by static electricity.

Proper ESD control techniques should be used

when handling these HBM class 1B devices.

10. All dimensions are in inches [mm].

11. Reference Application Note M538 for lead-free solder reflow

recommendations.

12. Plating is 100% Sn over BeCu.

GaN Bias Controller/Sequencer Module

Dual Supply: -8 to -3 V, +5 V

Rev. V2

MABC-001000-DPS00L

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0008521

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