EMY1 / UMY1N / FMY1A Transistors Emitter common (dual transistors) EMY1 / UMY1N / FMY1A zExternal dimensions (Unit : mm) (3) (4) 0.22 0.5 0.5 1.0 1.6 EMY1 (2) (5) 1.2 1.6 (1) 0.5 0.13 zFeatures 1) Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package. 2) PNP and NPN transistors have common emitters. 3) Mounting cost and area can be cut in half. Each lead has same dimensions zStructure Epitaxial planar type PNP / NPN silicon transistor ROHM : EMT5 Abbreviated symbol : Y1 Tr2 Tr1 Tr2 2.0 (2) 2.1 (4) (5) Tr1 0.1Min. 0.9 (3) 0.7 (1) 0~0.1 (2) (1) (5) (3) 1.25 FMY1A 0.15 EMY1 / UMY1N 1.3 (3) (4) 0.2 zEquivalent circuit 0.65 0.65 UMY1N Each lead has same dimensions (4) (2) (5) (1) ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : Y1 VCBO -60 60 V Collector-emitter voltage VCEO -50 50 V VEBO -6 7 V Collector current EMY1, UMY1N Power dissipation FMY1A IC PC -150 150 150 (TOTAL) 1 (5) 1.6 Collector-base voltage Emitter-base voltage (1) Unit 2.9 Tr2 mA 300 (TOTAL) 2 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C 2.8 0.3to0.6 0to0.1 Tr1 0.15 Symbol 1.1 Limits Parameter 0.8 (3) (4) (2) 0.3 zAbsolute maximum ratings (Ta = 25C) 0.95 0.95 1.9 FMY1A Each lead has same dimensions ROHM : SMT5 EIAJ : SC-74A Abbreviated symbol : Y1 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. Rev.A 1/4 EMY1 / UMY1N / FMY1A Transistors zElectrical characteristics (Ta = 25C) Tr1 (PNP) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO -60 - - V Collector-emitter breakdown voltage BVCEO -50 - - V IC=-1mA Emitter-base breakdown voltage BVEBO -6 - - V IE=-50A Collector cutoff current ICBO - - -0.1 A VCB=-60V Emitter cutoff current IEBO - - -0.1 A VEB=-6V VCE (sat) - - -0.5 V IC/IB=-50mA/-5mA hFE 120 - 560 - VCE=-6V, IC=-1mA fT - 140 - MHz VCE=-12V, IE=2mA, f=100MHz Cob - 4 5 PF Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance IC=-50A VCB=-12V, IE=0A, f=1MHz Tr2 (NPN) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 - - V IC=50A Collector-emitter breakdown voltage BVCEO 50 - - V IC=1mA Emitter-base breakdown voltage BVEBO 7 - - V IE=50A Collector cutoff current ICBO - - 0.1 A VCB=60V Emitter cutoff current IEBO - - 0.1 A VEB=7V VCE (sat) - - 0.4 V IC/IB=50mA/5mA hFE 120 - 560 - VCE=6V, IC=1mA fT - 180 - Cob - 2 3.5 Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance MHz VCE=12V, IE=-2mA, f=100MHz PF VCB=12V, IE=0A, f=1MHz zPackaging specifications Packaging type Type Taping Code T2R TR T148 Basic ordering unit (pieces) 8000 3000 3000 EMY1 UMY1N FMY1 zElectrical characteristic curves Tr1 (PNP) -10 -5 -2 -1 -0.5 -0.2 -0.1 -10 VCE=-6V -35.0 Ta=25C -100 -31.5 -28.0 -8 -24.5 -21.0 -6 -17.5 -14.0 -4 -10.5 -7.0 -2 -3.5A COLLECTOR CURRENT : IC (mA) -20 Ta=100C 25C -40C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) -50 -80 -60 Ta=25C -500 -450 -400 -350 -300 -250 -200 -150 -40 -100 -20 -50A IB=0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics 0 -0.4 -0.8 -1.2 -1.6 -2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics ( I ) IB=0 0 -1 -2 -3 -4 -5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( II ) Rev.A 2/4 EMY1 / UMY1N / FMY1A 500 Ta=100C 25C 200 100 -40C 200 100 50 50 -0.2 -0.5 -1 -2 -5 -10 -20 VCE=-6V -50 -100 -0.2 COLLECTOR CURRENT : IC (mA) -0.2 Ta=100C 25C -40C -0.05 -0.5 -1 -2 -5 -10 -20 -10 -20 1000 TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) -0.5 -0.2 -5 -50 -100 -50 -100 Ta=25C VCE=-12V 500 200 100 50 0.5 1 2 5 10 20 50 100 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) -0.2 IC/IB=50 -0.1 20 10 -0.05 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current ( I ) 20 Ta=25C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 -0.5 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.8 Gain bandwidth product vs. emitter current Fig.7 Collector-emitter saturation voltage vs. collector current ( II ) Ta=25C -0.5 Fig.5 DC current gain vs. collector current ( II ) lC/lB=10 -0.1 -2 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( I ) -1 -0.5 -1 -1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) VCE=-5V -3V -1V Ta=25C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Transistors Tr2 (NPN) 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25C COLLECTOR CURRENT : IC (mA) 20 10 2 1 25C -55C 5 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.10 Grounded emitter propagation characteristics 80 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 Grounded emitter output characteristics ( I ) 10 COLLECTOR CURRENT : IC (mA) 100 VCE=6V Ta=100C COLLECTOR CURRENT : IC (mA) 50 30A Ta=25C 27A 8 24A 21A 6 18A 15A 12A 4 9A 6A 2 3A 0 0 IB=0A 4 8 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.12 Grounded emitter output characteristics ( II ) Rev.A 3/4 EMY1 / UMY1N / FMY1A 500 Ta=25C VCE=5V 3V 1V 200 100 50 25C 200 -55C 100 50 20 20 0.5 1 2 5 10 20 10 0.2 50 100 200 COLLECTOR CURRENT : IC (mA) 0.05 0.02 0.01 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) 20 Ta=25C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.19 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 10 20 50 100 200 Ta=25C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 Ta=100C 25C -55C 0.1 0.05 0.02 0.01 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Ta=25C VCE=6V IC/IB=50 0.2 0.2 0.5 Fig.15 Collector-emitter saturation voltage vs. collector current ( I ) 50 100 500 200 100 50 -0.5 -1 -2 -5 -10 -20 -50 -100 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) Fig.17 Collector-emitter saturation voltage vs. collector current ( III ) Fig.16 Collector-emitter saturation voltage vs. collector current ( II ) 10 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=100C 25C -55C 0.5 5 0.5 BASE COLLECTOR TIME CONSTANT : Cc rbb' (ps) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 0.2 0.2 2 Fig.14 DC current gain vs. collector current ( II ) IC/IB=10 0.1 1 COLLECTOR CURRENT : IC (mA) Fig.13 DC current gain vs. collector current ( I ) 0.5 0.5 TRANSITION FREQUENCY : fT (MHz) 10 0.2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) VCE=5V Ta=100C DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Transistors Fig.18 Gain bandwidth product vs. emitter current Ta=25C f=32MHZ VCB=6V 200 100 50 20 10 -0.2 -0.5 -1 -2 -5 -10 EMITTER CURRENT : IE (mA) Fig.20 Base-collector time constant vs. emitter current Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1