ZXMS6005DGQ
Document number: DS37133 Rev. 5 - 2
1 of 8
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September 2018
© Diodes Incorporated
ZXMS6005DGQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
IntelliFET MOSFET
Product Summary
Continuous Drain Source Voltage 60V
On-state Resistance 200mΩ
Nominal Load Current (VIN = 5V) 2.0A
Clamping Energy 490mJ
Description
The ZXMS6005DGQ is a self protected low side IntelliFETTM
MOSFET with logic level input. It integrates over-temperature, over-
current, over-voltage (active clamp) and ESD protected logic level
functionality. The ZXMS6005DGQ is ideal as a general purpose
switch driven from 3.3V or 5V microcontrollers in harsh environments
where standard MOSFETs are not rugged enough.
Applications
Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
Features and Benefits
Compact High Power Dissipation Package
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Over Voltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Over-current Protection
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT223 (Type DN)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
Ordering Information (Note 5)
Part Number
Marking
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
ZXMS6005DGQTA
ZXMS6005D
7
12
1,000 Units
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Top View
SOT223 (Type DN)
Top View
Pin Out
Device Symbol
D
S
IN
S
D
IN
D
e3
ZXMS6005D = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 8 = 2018)
WW or WW = Week Code (01 to 53)
IntelliFET is a trademark of Diodes Incorporated.
ZXMS6005DGQ
Document number: DS37133 Rev. 5 - 2
2 of 8
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September 2018
© Diodes Incorporated
ZXMS6005DGQ
Functional Block Diagram
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Continuous Drain-Source Voltage
VDS
60
V
Drain-Source Voltage for Short Circuit Protection
VDS(SC)
24
V
Continuous Input Voltage
VIN
-0.5 to +6
V
Continuous Input Current @-0.2V ≤ VIN ≤ 6V
Continuous Input Current @VIN < -0.2V or VIN > 6V
IIN
No limit
│IIN │≤2
mA
Pulsed Drain Current @VIN = 3.3V
IDM
5
A
Pulsed Drain Current @VIN = 5V
IDM
6
A
Continuous Source Current (Body Diode) (Note 6)
IS
2.5
A
Pulsed Source Current (Body Diode)
ISM
10
A
Unclamped Single Pulse Inductive Energy,
TJ = +25°C, ID = 0.5A, VDD = 24V
EAS
490
mJ
Electrostatic Discharge (Human Body Model)
VESD
4000
V
Charged Device Model
VCDM
1000
V
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation at TA = +25°C (Note 6)
Linear Derating Factor
PD
1.3
10.4
W
mW/°C
Power Dissipation at TA = +25°C (Note 7)
Linear Derating Factor
PD
3.0
24
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
96
°C/W
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
42
°C/W
Thermal Resistance, Junction to Case (Note 8)
RθJC
12
°C/W
Operating Temperature Range
TJ
-40 to +150
°C
Storage Temperature Range
TSTG
-55 to +150
°C
Notes: 6. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR-4 board, in still air conditions.
7. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR-4 board, in still air conditions.
8. Thermal resistance between junction and the mounting surfaces of drain and source pins.
dV/dt
Limitation
ZXMS6005DGQ
Document number: DS37133 Rev. 5 - 2
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ZXMS6005DGQ
Recommended Operating Conditions
The ZXMS6005DGQ is optimized for use with μC operating from 3.3V and 5V supplies.
Characteristic
Symbol
Min
Max
Unit
Input Voltage Range
VIN
0
5.5
V
Ambient Temperature Range
TA
-40
+125
°C
High Level Input Voltage for MOSFET to be on
VIH
3
5.5
V
Low Level Input Voltage for MOSFET to be off
VIL
0
0.7
V
Peripheral Supply Voltage (voltage to which load is referred)
VP
0
24
V
Thermal Characteristics
Single Pulse
TA = 25°C
See Note 6
See Note 6
See Note 7
TA = 25°C
See Note 6
Single Pulse
TA = 25°C
See Note 6
ZXMS6005DGQ
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Static Characteristics
Drain-Source Clamp Voltage
VDS(AZ)
60
65
70
V
ID = 10mA
Off State Drain Current
IDSS
—
—
1
μA
VDS = 12V, VIN = 0V
—
—
2
VDS = 36V, VIN = 0V
Input Threshold Voltage
VIN(TH)
0.7
1.2
1.5
V
VDS = VGS, ID = 1mA
Input Current
IIN
—
60
100
μA
VIN = 3V
—
120
200
VIN = 5V
Input Current While Over Temperature Active
—
—
—
300
μA
VIN = 5V
Static Drain-Source On-State Resistance
RDS(ON)
—
170
250
mΩ
VIN = 3V, ID = 1A
—
150
200
VIN = 5V, ID = 1A
Continuous Drain Current (Note 6)
ID
1.4
—
—
A
VIN = 3V, TA = +25°C
1.6
—
—
VIN = 5V, TA = +25°C
Continuous Drain Current (Note 7)
1.9
—
—
VIN = 3V, TA = +25°C
2.0
—
—
VIN = 5V, TA = +25°C
Current Limit (Note 9)
ID(LIM)
2.2
5
—
A
VIN = 3V
3.3
7
—
VIN = 5V
Dynamic Characteristics
Turn On Delay Time
tD(ON)
—
6
—
μs
VDD = 12V, ID = 1A, VGS = 5V
Rise Time
tR
—
14
—
Turn Off Delay Time
tD(OFF)
—
34
—
Fall Time
tF
—
19
—
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 10)
TJT
+150
+175
—
°C
—
Thermal Hysteresis (Note 10)
ff
—
+10
—
°C
—
Notes: 9. The drain current is restricted only when the device is in saturation (see graph ‘Typical Output Characteristic’). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
10. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
ZXMS6005DGQ
Document number: DS37133 Rev. 5 - 2
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Typical Characteristics (Cont.)
-50 0 50 100 150 200 250 300
0
2
4
6
8
10
12
-50 0 50 100 150 200 250 300
0
2
4
6
8
10
12
-2 0 2 4 6 8 10 12
0
2
4
6
8
Switching Speed
VIN
Drain-Source Voltage (V)
Time (s)
VDS
ID=1A VDS
VIN
Switching Speed
Drain-Source Voltage (V)
Time (s)
ID=1A
Typical Short Circuit Protection
VIN = 5V
VDS = 15V
RD = 0
ID Drain Current (A)
Time (ms)
ZXMS6005DGQ
Document number: DS37133 Rev. 5 - 2
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ZXMS6005DGQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223 (Type DN)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223 (Type DN)
A1
A
D
b
e1
e
b2
A2
C
E
L
E1
0.25
Seating
Plane
Gauge
Plane
SOT223 (Type DN)
Dim
Min
Max
Typ
A
--
1.70
--
A1
0.01
0.15
--
A2
1.50
1.68
1.60
b
0.60
0.80
0.70
b2
2.90
3.10
--
c
0.20
0.32
--
D
6.30
6.70
--
E
6.70
7.30
--
E1
3.30
3.70
--
e
--
--
2.30
e1
--
--
4.60
L
0.85
--
--
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
X1
Y1
Y
XC
C1 Y2
ZXMS6005DGQ
Document number: DS37133 Rev. 5 - 2
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ZXMS6005DGQ
IMPORTANT NOTICE
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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