Xonias | 2N5006 AND 2N5008 en 10 AMP SSDI HIGH SPEED NPN TRANSISTOR | ites: Cottona soc 100 VOLTS oe CASE STYLE T JEDEC TO-61 FEATURES ALL TERMINALS ISOLATED FROM CASE RADIATION TOLERANT ' FAST SWITCHING, LOO NSEC MAX td HIGH FREQUENCY, TYPICAL fe BVCEO 80 VOLTS MIN HIGH LINEAR GAIN, LOW SATURATION VOLTAGE 200C OPERATING, GOLD EUTECTIC DIE ATTACH DESIGNED FOR COMPLEMENTARY USE WITH 2N5007 AND 2N5009 100 MHZ Rating Symbo! Value ~- Unit Collector - Emitter Voltage Vee Volts ~ 80 Collector - Base Voltage Yoea 100 Volts Emitter - Base Voltage Veo 6 Volts Collector Current Ig 10 Amps Base Current Ig 3 Amps Total Device Dissipation @ TC = 50C. Pp 100 Watts Derateaboe = 55C 667 mwaeC Operating and Storage Temperature Ty Tstg 65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance, Junction tc Case ReJC 1.5 tA ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit Collector - Emitter Breakdown Voltage (p= 200 mMAde BYcrg: 80 Vdc Collector - Base Breakdown Voltage vide (g= 200 wade) Bcgo 100 Emitter - Base Breakdown Voltage (Ig = 200 uAdc) BVego 6 Vie 1/85 B346P NOTE: All specifications subject to change without notice.ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit Collector Cutott Current (VCE = 40 Vdc) scO o wAde VCE = 60 Vdc} CES . uAdc Collector Cutoff Current (VCE = LOOVdc) rCEK 1.0 mAdc (VCE = 60 Vdc, VBE = 2 Vde, Tc = 150C) CEX 500 uAdc Emitter Cutoff Current (VEB = 4 Vde) leno 1.0 uAdec = 5.5 Vde} 1.0 mAdc BC Current Gain 2N5006 20 = = 2N5008 50 (ic = 100 made. Veg 5 Ve} SNe OOS Nee: 30 90 (ie= 5 Ad. Mog =e 5a) a Neeoe 70 200 _ _ +i 20 (le = 10 Adc. Vog = 5 Vde} 2N5008 45 Collector - Emitter Saturation Voltage (lg = 5 Adclg= 500 madc) Veg (san 0.9 Vic (le = 10 ade. lp = 300 maac) 1.5 Base - Emitter Saturation Voltage (Io = 5 Adealg= 500 maAdy Vpe (sary 1.8 Vee (lg = 10 Adctg= 1 Adc} 2.2 Current - Gain - Bandwith Product 2N5006 f 35 Miz I= 500 mAde, Ver = = 5. f= 20 M T fle m Adc, Veg Vide. f 0 Hz} ONS5O08 40 Output Capacitance (Veg = 10 Vocle=O0.f= 1 Muz} Cop 275 a Base - Emitter Voltage* (Vop = 5 Vde, IC = 5 Adc) VpE(ON)* 1.8 Vde Delay Fime Veo = 40 Vdc. ty 100 ns Rise Time Vep(off)= 3.0 Vdc, l 106 ns Storage Time To = 2 Adc, ty. 2.0 us Fail Tine Igy = gp = 200 MAdc) y 200 ns *Pulse Test: Pulse width = 300 us, DutyCycie = 2% TYPICAL GPERATING CURVES DISSIPATION DERATING CURVE FORWARD BIAS OC SAFE OPERATION AREA (5.0.A. CURVE) T, = 2s%c CURVES APPLY BELOW RATED c CEO O-C Operation 5 N t & 7% XN & = ia a a 3 \ 6 . 50 & - a z pe) ' & fs N 5 1 \ | _ 3 75 loo 125 150) 2175: 200 te =Core Temperniyre"C SSDI. 7 10 20 0 7a 100 VceCollector-Emitier Valtage-V SOLID STATE DEVICES, INC. P.O. Box 577. La Mirada, California 90637 Telephone: (213) 921-9660 TWX 910-583-4807 FAX#213-921-2396