Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
BC848A,B,C 1
2
1
2
33
SOT-23
Rating Symbol Value Unit
Characteristic
Collector-Emitter Voltage VCEO 30 Vdc
Collector-Base Voltage VCBO 30 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current-Continuous IC100 mAdc
Characteristic Symbol Max. Unit
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oCPD225
1.8 mW
mW / oC
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oCPD300
2.4 mW
mW / oC
Thermal Resistance Junction to Ambient 556 oC / W
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
R
JA
Thermal Resistance Junction to Ambient 417 oC / WR
JA
Junction and Storage Temperature
Collector-Emitter Breakdowe Voltage
( IC=10 uA, VEB=0 )
Collector-Base Breakdowe Voltage
( IC=10 uA )
Collector-Emitter Breakdowe Voltage
( IC=10mA )
Emitter-Base Breakdowe Voltage
( IE=1.0 uA )
Symbol
V(BR)CES
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Min.
30
30
30
5.0
-
-
Max.
-
-
-
-
15
5.0
Typ.
-
-
-
-
-
-
Unit
Vdc
Vdc
Vdc
Vdc
nAdc
uAdc
Collector Cutoff Current
( VCB=30 V )
( VCB=30 V, TA = 150oC )
BC848A=1J; BC848B=1K; BC848C=1L
-55 to +150 oCTJ,TSTG
Zowie Technology CorporationREV. : 0
EMITTER
BASE
COLLECTOR
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
Zowie Technology Corporation
Characteristic
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)
ON CHARACTERISTICS
DC Current Gain
( IC= 10 uA, VCE= 5.0 V )
( IC= 2.0 mA, VCE= 5.0 V )
Collector-Emitter Saturation Voltage
( IC= 10 mA, IB= 0.5 mA )
( IC= 100 mA, IB= 5.0 mA )
Base-Emitter Saturation Voltage
( IC= 10 mA, IB= 0.5 mA )
( IC= 100 mA, IB= 5.0 mA )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC= 10 mA, VCE= 5.0 V, f=100 MHZ )
Output Capacitance
( VCB= 10 V, f=1.0 MHZ )
Noise Figure
( VCE= 5.0 Vdc, IC= 0.2 mA, RS= 2.0k ohms, f=1.0 kHZ, BW = 200HZ)
Symbol
HFE
VCE(sat)
VBE(sat)
fT
Cobo
NF
Unit
-
V
V
MHZ
pF
dB
Min.
-
-
-
110
200
420
BC848A
BC848B
BC848C
BC848A
BC848B
BC848C
-
-
-
-
100
-
-
Max.
-
-
-
220
450
800
0.25
0.60
-
-
-
4.5
10
Typ.
90
150
270
180
290
520
-
-
0.7
0.9
Base-Emitter Voltage
( IC= 2.0 mA, VCE= 5.0 V )
( IC= 10 mA, VCE= 5.0 V ) VBE(on) mV
580
-700
770
660
-
-
-
-
Zowie Technology CorporationREV. : 0
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation BC847A,B,C
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT ( mA )
Figure 3. Collector Saturation Region Figure 4. Base-Emitter Temperature Coefficient
IC, COLLECTOR CURRENT ( mA )
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE ( VOLTS )
IB, BASE CURRENT ( mA )
VCE, COLLECTOR EMITTER VOLTAGE ( V )
IC, COLLECTOR CURRENT ( mA )
Figure 5. Capacitances
VR, REVERSE VOLTAGE ( VOLTS )
C, CAPACITANCE ( pF )
Figure 6. Current-Gain-Bandwidth Product
IC, COLLECTOR CURRENT ( mA )
tT, CURRENT-GAIN-BANDWIDTH PRODUCT(MHZ)
Figure 2. "Saturation" and "On" Voltage
2.0
0.2 0.5 1.0 10 20 50
0.2 100
2.0 5.0 200
1.5
1.0
0.8
0.6
0.4
0.3
TA= 25oC
TA= 25oC
TA= 25oC
TA= 25oCTA= 25oC
-55oC to +125oC
VCE = 10 V
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
VBE(SAT) @ IC/IB = 10
VCE(SAT) @ IC/IB = 10
VBE(on) @ VCE = 10 V
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
IC = 10 mA
IC = 20 mA
IC = 50 mA
IC = 100 mA
IC = 200 mA
1.6
1.2
2.0
2.8
2.4
0.2 1.0 10 100
1.0
VB, TEMPERATURE COEFFICIENT (mV / oC)
Cib
Cob
VCE = 10 V
10
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
7.0
5.0
3.0
2.0
0.8 4.0 8.0
80
100
200
300
400
60
20
40
30
0.7 1.0 10 202.0 50
307.05.03.00.5
Zowie Technology Corporation
REV. : 0
Zowie Technology Corporation BC847A,B,C
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT ( mA )
Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient
IC, COLLECTOR CURRENT ( mA )
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE ( VOLTS )
IB, BASE CURRENT ( mA )
VCE, COLLECTOR EMITTER VOLTAGE ( V )
IC, COLLECTOR CURRENT ( mA )
Figure 8. "On" Voltage
TA= 25oC
TA= 25oC
TA= 25oC
-55oC to +125oC
VB for VBE
VCE = 10 V
VBE(SAT) @ IC/IB = 10
VCE(SAT) @ IC/IB = 10
VBE @ VCE = 5.0 V
IC = 10 mA
IC = 20 mA
IC = 50 mA
IC = 100 mA
IC = 200 mA
-1.8
-1.4
-2.2
-3.0
-2.6
0.2 1.0 10 200
-1.0
VB, TEMPERATURE COEFFICIENT (mV / oC)
1.0
2.0
0.1 1.0 10 100
0.2
0.2
0.5
0.8
1.0
0.6
0.2
0.4
0.2 1.0 10 200
00.5 2.0 5.0 20 50 100
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
0.05 0.2 0.5 2.0 5.0
